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Publications associées (29)

Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

In this article, an analytical predictive model of interface charge traps in symmetric, long-channel double-gate, junctionless transistors (JLTs) is proposed based on a charge-based model. Interface charge traps arising from exposure to chemicals, high-ene ...

2019

Proceedings of the 2018 next-generation Gamma Knife research meeting

Mathieu Jacques David Cambou, Constantin Tuleasca

In order to determine what areas of research are a clinical priority, a small group of young Gamma Knife investigators was invited to attend a workshop discussion at the 19th International Leksell Gamma Knife Society Meeting. Two areas of interest and the ...

AMER ASSOC NEUROLOGICAL SURGEONS2018

A novel Lab-on-Fiber Radiation Dosimeter for Ultra-high Dose Monitoring

Georgi Gorine, Federico Ravotti

In this work, we report on the first demonstration of Lab on Fiber (LOF) dosimeter for ionizing radiation monitoring at ultra-high doses. The new dosimeter consists in a metallo-dielectric resonator at subwavelength scale supporting localized surface plasm ...

Nature Research2018

Microwave Imaging of Brain Stroke : Contributions to Modeling and Inverse Problem Resolution

Mina Bjelogrlic

Brain stroke is an age-related illness which has become a major issue in our ageing societies. Early diagnosis and treatment are of high importance for the full recovery of the patient, as reminded in Anglo-Saxon countries by the abbreviation FAST (Face, A ...

EPFL2018

A Radiation-Tolerant, high performance SPAD for SiPMs implemented in CMOS technology

Edoardo Charbon, Myung Jae Lee, Qi Guo

We investigate the radiation effects on single-photon avalanche diodes (SPADs) fabricated in CMOS technology. For this investigation, a high-performance SPAD based on a vertical p-i-n construction with buried-N layer is proposed and used for the characteri ...

2017

Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs

Christian Enz, Claudio Bruschini, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta, Federico Faccio

This paper investigates the radiation tolerance of 28-nm bulk n and pMOSFETs up to 1 Grad of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS process demonstrate a strong geometry dependence as a result of the complex int ...

2017

Low-Dose Prostate Cancer Brachytherapy with Radioactive Palladium-Gold Nanoparticles

Thomas La Grange, Marc-André Fortin

Prostate cancer (PCa) is one of the leading causes of death among men. Low-dose brachytherapy is an increasingly used treatment for PCa, which requires the implantation of tens of radioactive seeds. This treatment causes discomfort; these implants cannot b ...

Wiley2017

A multi-purpose imaging endstation for high-resolution micrometer-scaled sub-second tomography

Goran Lovric, Marco Stampanoni

Time-resolved imaging of dynamic processes, ranging from biological in vivo studies to materials under in situ and in operando conditions, requires a flexible endstation capable of controlling complex components that interact in different configurations an ...

Elsevier Sci Ltd2016

GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs

Christian Enz, Claudio Bruschini, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta, Federico Faccio

The DC performance of both n- and pMOSFETs fabricated in a commercial-grade 28 nm bulk CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation annealing. The aim is to assess the potential use of such an advanced CMOS tech ...

IEEE2016

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