Publications associées à Electrical element

Gate unit for a gate-commutated thyristor and integrated gate-commutated thyristor

The invention relates to a gate unit (22) for controlling a gate commutated thyristor (21), comprising: - a voltage selector (26) for selectively applying a high supply potential (Vpos), a middle supply potential (Vmid), and a low supply potential (Vneg); ...

2023

A Front-End CMOS Interface Circuit With High Voltage Charge Pump and Oscillator for Capacitive Micromachined Ultrasonic Transducers

Sandro Carrara, Gian Luca Barbruni, Zhengwen Jiang, Yihe Zhao

Label-free biosensors, combined with miniaturized micro-electromechanical sensory platforms, offer an attractive solution for real-time and facile monitoring of biomolecules due to their high sensitivity and selectivity without the need for specifically la ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Information Theory in Transmembrane Transport

Solange Marie Flatt

The past decades have seen the advent of information theory in various fields, from quantum physics to cosmology. At an intermediary scale between atomic and cosmological scales are biological systems and in particular the cell, as a constitutive element o ...

EPFL2023

Sub-kHz-Linewidth External-Cavity Laser (ECL) With Si3N4 Resonator Used as a Tunable Pump for a Kerr Frequency Comb

Tobias Kippenberg, Junqiu Liu

Combining optical gain in direct-bandgap III-V materials with tunable optical feedback offered by advanced photonic integrated circuits is key to chip-scale external-cavity lasers (ECL), offering wideband tunability along with low optical linewidths. Exter ...

IEEE Institute of Electrical and Electronics Engineers2023

Dynamic behavior of exposed geomembrane systems in pressure waterways

Giovanni De Cesare, Samuel Luke Vorlet, Roberto Proença Seixas

Geomembrane systems have been used in dams and reservoirs as rehabilitation technology since several decades and are now used worldwide. They act as impervious layer to prevent and mitigate water leakage and damage to structures. They meet the needs of man ...

CRC Press/Balkema2023

New Insights for Parasitic Effects of Label-Free Biosensors Based on Capacitive Micromachined Ultrasonic Transducers

Sandro Carrara, Zhengwen Jiang, Yihe Zhao, Jie Li

Capacitive micromachined ultrasonic transducers (CMUTs) are regarded as an attractive candidate in bio-applications such as imaging and molecule monitoring. However, the previous researches on biochemical sensing are mostly air-coupled application based on ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Anisotropic and nonlinear transport in microstructured 3D topological semimetals

Xiangwei Huang

Topological semimetals are frequently discussed as materials platforms for future electronics that exploit the remarkable properties of their quasiparticles. These ideas are mostly based on dispersion relations that mimic relativistic particles, such as We ...

EPFL2022

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

Mihai Adrian Ionescu, Junrui Zhang, Francesco Bellando, Pierpaolo Palestri, Luca Selmi

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power i ...

2021

Multi-scale model for coupled piezoelectric-inelastic behavior

Dragan Damjanovic

In this work, we present the development of a 3D lattice-type model at microscale based upon the Voronoi-cell representation of material microstructure. This model can capture the coupling between mechanic and electric fields with non-linear constitutive b ...

TECHNO-PRESS2021

Hardware-in-the-Loop Characterization of Source-Affected Output Characteristics of Cascaded H-Bridge Converter

Drazen Dujic, Marko Petkovic

Recent trends in power system design such as an increasing share of renewable energy sources and integration of power electronics equipment for medium voltage applications are creating different subsystem interactions that require proper investigation, und ...

2021

Negative capacitance semiconductor sensor

Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando

The present invention relates to a semiconductor sensor (1) comprising: a source element (17, 19); a drain element (21, 23); a semiconductor channel element (25) between the source element (17, 19) and the drain element (21, 23) for forming an electrically ...

2020

Nonreciprocity in acoustic and elastic materials

Romain Christophe Rémy Fleury, Hussein Nassar

The law of reciprocity in acoustics and elastodynamics codifies a relation of symmetry between action and reaction in fluids and solids. In its simplest form, it states that the frequency-response functions between any two material points remain the same a ...

2020

Origin of apparent light-enhanced and negative capacitance in perovskite solar cells

Wolfgang Richard Tress, Ulf Anders Hagfeldt, Firouzeh Ebadi Garjan

So-called negative capacitance seems to remain an obscure feature in the analysis of the frequency-dependent impedance of perovskite solar cells. It belongs to one of the puzzling peculiarities arising from the mixed ionic-electronic conductivity of this c ...

Springer2019

Sensitivity of Simulated Steel Column Instabilities to Plasticity Model Assumptions

Dimitrios Lignos, Albano António De Abreu E Presa De Castro E Sousa, Alexander Riley Hartloper

Current experimental studies on the seismic behavior of steel wide-flange columns under multi-axis cyclic loading reveal that these members, depending on their geometric characteristics, may be susceptible to axial shortening, out-of-plane deformations and ...

2019

Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3

Nergiz Sahin Solmaz, Mustafa Berke Yelten, Sadik Ilik

This paper presents a modeling approach to simulate the impact of total ionizing dose (TID) degradation on low-power analog and mixed-signal circuits. The modeling approach has been performed on 180-nm n-type metal-oxide-semiconductor field-effect transist ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

An improved time marching simulation of distributed multiport networks loaded with nonlinear devices

In this paper, we present a method for obtaining stable time marching equations of distributed multiport networks with nonlinear loads. This method allows to highly decrease the number of frequency samples required by other stable TM methods. Stability is ...

2018

Inverse Gating for Low Energy Block Ciphers

Francesco Regazzoni, Subhadeep Banik

In this paper we explore the technique of “inverse gating” which is a significant improvement over the ”round gating” technique introduced in HOST 2016. Round gating worked by generating timing signals to separate glitch propagation from one circuit elemen ...

2018

Dispatching Stochastic Heterogeneous Resources Accounting for Grid and Battery Losses

Jean-Yves Le Boudec, Mario Paolone, Fabrizio Sossan, Lorenzo Enrique Reyes Chamorro, Eleni Stai

We compute an optimal day-ahead dispatch plan for distribution networks with stochastic resources and batteries, while accounting for grid and battery losses. We formulate and solve a scenario-based AC Optimal Power Flow (OPF), which is by construction non ...

2018

An electromagnetic actuator

Herbert Shea, Juan José Zarate

The present invention concerns an electromagnetic actuator (2) for a haptic display (1). The actuator (2) comprises: a) a first, movable permanent magnetic element (5), the first magnetic element (5) comprising a first latching layer facing side, a second ...

2018

A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Emanuele Andrea Casu, Matteo Cavalieri, Andrei Müller, Alessandro Fumarola

This letter introduces a reconfigurable planar square-coil-shaped inductor exploiting as the tuning mechanism the insulator-to-metal transition (IMT) of a vanadium dioxide (VO2) switch placed in the interwinding space in an unprecedented manner. The VO2 th ...

2018