Zone de déplétion

Science de la nature
Physique
Physique de la matière cond...
Physique du solide

À propos
Confidentialité
Mentions légales

Graph Chatbot

Publications associées (30)

Engineering of PEM-PEC photocathodes for solar-driven hydrogen production

Marina Caroline Michèle Caretti

Earth has always been in perpetual evolution, but today we must face its rapid change due to human activity. The intensification of industrial activities and transportation to support our modern lifestyles are the main causes of climate change and the adve ...

EPFL2022

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Carlotta Gastaldi

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

EPFL2022

Impact of Interface Traps in Floating-Gate Memory Based on Monolayer MoS2

Andras Kis, Guilherme Migliato Marega

Two-dimensional materials (2DMs) have found potential applications in many areas of electronics, such as sensing, memory systems, optoelectronics, and power. Despite an intense experimental work, the literature is lacking of accurate modeling of nonvolatil ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Gradient flow emulation using drift diffusion processes

Sanket Sanjay Diwale

The present invention concerns a method of emulating gradient flow for solving a given problem as a charge distribution in a device (1) comprising: first type charge carrier regions (5) interfacing a second type charge carrier region (11) thereby forming c ...

2021

Passivating Polysilicon Recombination Junctions for Crystalline Silicon Solar Cells

Christophe Ballif, Franz-Josef Haug, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Andrea Ingenito, Audrey Marie Isabelle Morisset, Philippe Wyss, Mario Joe Lehmann

Polysilicon recombination junctions whose n-type bottom layers double as a passivating contact to the silicon surface are investigated. Such recombination junctions are a key element in the interconnection of tandem devices with a silicon bottom cell, and ...

2021

In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation

Edoardo Charbon, Christian Enz, Farzan Jazaeri, Hung-Chi Han, Antonio D'Amico

In this paper, the influence of temperature and back-gate bias is experimentally investigated on 22 nm FDSOI CMOS process. Cryogenic DC characterization was carried out under various back-gate voltages, V back , from 2.95 K back to 300 K. An abrupt drop-of ...

IEEE2021

Time-reversal symmetry breaking Abelian chiral spin liquid in Mott phases of three-component fermions on the triangular lattice

Frédéric Mila, Karlo Penc, Pierre Marcel Nataf, Miklos Lajko, Carolin Boos

We provide numerical evidence in favor of spontaneous chiral symmetry breaking and the concomitant appearance of an Abelian chiral spin liquid for three-component fermions on the triangular lattice described by an SU(3) symmetric Hubbard model with hopping ...

2020

Monitoring radiation damage in the LHCb Tracker

Achille Mauri, Elena Graverini, Mark Tobin, Preema Rennee Pais, Pavol Stefko

This paper presents the techniques used to monitor radiation damage in the LHCb Tracker Turicensis during the LHC Runs 1 and 2. Bulk leakage currents in the silicon sensors were monitored continuously, while the full depletion voltages of the sensors were ...

2020

Characterisation of Silicon Heterojunction Solar Cells Beyond Standard Test Conditions

Jean Cattin

The global photovoltaic market is mostly dominated by solar cells based on crystalline silicon (c-Si), which are covering 95% of the market. This thesis concerns silicon heterojunction (SHJ), a high-efficiency technology with a 2% market share in 2018, but ...

EPFL2020

Deep-UV-Enhanced Approach for Low-Temperature Solution Processing of IZO Transistors with High-k AlOx/YAlOx Dielectric

Danick Briand, Jaemin Kim, Alessio Mancinelli

Solution processing is an attractive alternative to standard vacuum fabrication techniques for the large-area manufacturing of metal oxide (MOx)-based electron devices. Here, we report on thin-film transistors (TFTs) based on a solution-processed indium zi ...

AMER CHEMICAL SOC2020

Page 2 sur 2