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Publications associées (28)

Low-temperature solution-processed wavelength-tunable perovskites for lasing

Michael Graetzel, Nripan Mathews

Low-temperature solution-processed materials that show optical gain and can be embedded into a wide range of cavity resonators are attractive for the realization of on-chip coherent light sources. Organic semiconductors and colloidal quantum dots are consi ...

Nature Publishing Group2014

Ultra-Low-Temperature Silicon and Germanium-on-Silicon Avalanche Photodiodes : Modeling, Design, and Characterization

Mahdi Aminian

In this thesis we propose the use of photodiodes fabricated in planar technologies to address the detection problem in these applications. A number of solutions exist, optimized for these wavelengths, based on Germanium (Ge) and other III-V materials. In t ...

EPFL2014

A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire

Anna Fontcuberta i Morral, Xin Zhou, Silvija Gradecak

We review different strategies to achieve a three-dimensional energy bandgap modulation in a nanowire (NW) by the introduction of self-assembled 0D, 1D and 2D quantum structures, quantum dots (QDs), quantum wires (QWRs) and quantum wells (QWs). Starting wi ...

Royal Society of Chemistry2013

Photocurrent spectroscopy of site-controlled pyramidal quantum dots

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Pascal Gallo, Jérôme Faist, Arun Mohan

Intraband photocurrent spectroscopy of site-controlled pyramidal quantum dots by inserting them into the intrinsic region of n-i-n like quantum dot infrared photodetector structure is reported. The photovoltaic response is observed in the mid-infrared regi ...

American Institute of Physics2012

Localized and delocalized Ti 3d carriers in LaAlO3/SrTiO3 superlattices revealed by resonant inelastic x-ray scattering

Thorsten Schmitt, Joël Mesot

The important source of interface conductivity in LaAlO3/SrTiO3 heterostructures, the Ti 3d carriers, is probed with resonant inelastic x-ray scattering at the Ti 2p(3/2) edge of epitaxially grown superlattices. We reveal unambiguously the generation of bo ...

2011

Tuning optical modes in slab photonic crystal by atomic layer deposition and laser-assisted oxidation

Laurent Balet

The authors experimentally investigate the effects of atomic layer deposition (ALD) and laser-assisted oxidation on the optical modes in GaAs L3 photonic crystal air-bridge cavities, using layers of InAs quantum dots as internal light source. Four distinct ...

2011

InAs Quantum Dot Arrays Decorating the Facets of GaAs Nanowires

Anna Fontcuberta i Morral, Emanuele Uccelli

InAs quantum dot arrays are obtained on GaAs nanowire facets by molecular beam epitaxy. The GaAs nanowires are first grown by the gallium-assisted catalyst-free method. Decoration of the nanowire facets with InAs quantum dots is achieved only when the face ...

American Chemical Society2010

Optical Properties of InAs Quantum Dot Array Ensembles with Predetermined Lateral Sizes from 20 to 40 nm

Anna Fontcuberta i Morral, Emanuele Uccelli, Laura Waller

Cleaved edge overgrowth and selective area epitaxy were combined for the synthesis of InAs quantum dot (QD) arrays with lateral sizes from 20 to 40 nm. The optical properties were locally assessed by confocal photoluminescence spectroscopy experiments at l ...

2010

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