Strained silicon

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Publications associées (26)

BSIM6: Analog and RF Compact Model for Bulk MOSFET

Christian Enz, Yogesh Singh Chauhan, Maria-Anna Chalkiadaki, Sourabh Khandelwal

BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought from BSIM4. The model shows excellent source-drain symmetry during ...

Institute of Electrical and Electronics Engineers2014

Transient Off-Current in Junctionless FETs

Jean-Michel Sallese, Didier Bouvet, Farzan Jazaeri, Lucian Barbut

We report preliminary measurements of transient drain current undershoot with time constants of the order of milliseconds in thick and highly doped n-type junctionless fieldeffect transistors. This effect might be attributed to a process involving generati ...

Ieee-Inst Electrical Electronics Engineers Inc2013

On thermal and radiation damage to silicon crystals in the LHC proton beam

Philippe Jean Schoofs

We investigate thermal and radiation effects in silicon crystals which can be used for extracting beam halo particles in high energy accelerators. Application of bent crystals for removing halo is considered as a promising technique to enhance the beam col ...

Elsevier2013

Iron Resonant Photoemission Spectroscopy on Anodized Hematite Points to Electron Hole Doping during Anodization

Michael Graetzel, Kevin Sivula, Li Zhang, Artur Braun, Philippe Wyss, Qianli Chen, Jin Guo

Anodization of a-Fe2O3 (hematite) electrodes in alkaline electrolyte under constant potential conditions the electrode surface in a way that an additional current wave occurs in the cyclic voltammogram. The energy position of this current wave is closely b ...

Wiley-Blackwell2012

Electronic and Structural Properties of the Ge/GeO2 Interface through Hybrid Functionals

Jan Felix Binder

The performance of silicon based microelectronic circuits reaches the end of the roadmap. New material systems are required for further improvements in speed and power consumption. Germanium is a possible candidate to substitute silicon for microelectronic ...

EPFL2012

High numerical aperture silicon collimating lens for mid-infrared quantum cascade lasers manufactured using wafer-level techniques

Hans Peter Herzig, Lubos Hvozdara, Pierre-Yves Baroni, Joab Di Francesco, Antoine Muller

We present an aspheric collimating lens for mid-infrared (4-14 µ) quantum cascade lasers. The lenses were etched into silicon by an inductively coupled plasma reactive ion etching system on wafer level. The high refractive index of silicon reduces the heig ...

2012

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