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Publications associées (30)

Experimental study of atrial fibrillation cycle length during rapid atrial septal pacing

Jean-Marc Vesin, Adrian Luca, Sasan Yazdani

Computer model-based simulations have shown that rapid stimulation at 60-100% of atrial fibrillation cycle length (AFCL) from a ring of electrodes located around the septum may induce local capture in both atria for most AF dynamics. The present study aims ...

2017

Deep level trapped defect analysis in CH3NH3PbI3 perovskite solar cells by deep level transient spectroscopy

Mohammad Khaja Nazeeruddin, Yonghui Lee

We report the presence of defects in CH3NH3PbI3, which is one of the main factors that deteriorates the performance of perovskite solar cells. Although the efficiency of the perovskite solar cells has been improved by curing defects using various methods, ...

Royal Soc Chemistry2017

Non-Destructive Examination Method for the ITER Toroidal Field Conductor Terminations

Pierluigi Bruzzone

An electric Non-Destructive examination method has been developed in order to inspect the ITER toroidal field (TF) terminations at room temperature and give an indication of the joint performance during manufacturing, thus reducing the risks related to hig ...

IEEE Institute of Electrical and Electronics Engineers2017

Nanoscale Defect Engineering and the Resulting Effects on Domain Wall Dynamics in Ferroelectric Thin Films

Nava Setter, Dragan Damjanovic, Silviu Cosmin Sandu, Ludwig Feigl

Defect engineering is one of the cornerstones of the modern electronics industry. Almost all electronic devices include materials that have been doped by ion bombardment. For materials where crystallinity is essential, such as ferroelectrics, defect type a ...

Wiley-Blackwell2017

Oxygen defects in GaAs: A hybrid functional study

Alfredo Pasquarello, Davide Colleoni

Using hybrid density functional calculations, we address the structural properties, formation energies, and charge transition levels of a variety of oxygen defects in GaAs. The set of considered defects comprises the bridging O atom in a As-O-Ga configurat ...

Amer Physical Soc2016

Glutathione deficit affects the integrity and function of the fimbria/fornix and anterior commissure in mice: relevance for schizophrenia

Rolf Gruetter, Yohan Van de Looij, Kim Do, Alberto Corcoba, Aline Monin, João Miguel das Neves Duarte

BACKGROUND: Structural anomalies of white matter (WM) are found in various brain regions of patients with schizophrenia, bipolar and other psychiatric disorders, but the causes at cellular and molecular levels remain unclear. Oxidative stress and redox dys ...

Oxford Univ Press2016

Oxygen defects in amorphous Al2O3: A hybrid functional study

Alfredo Pasquarello, Francesco Ambrosio, Zhendong Guo

The electronic properties of the oxygen vacancy and interstitial in amorphous Al2O3 are studied via ab initio molecular dynamics simulations and hybrid functional calculations. Our results indicate that these defects do not occur in amorphous Al2O3, due to ...

American Institute of Physics2016

Modeling and characterization of grain structures and defects in solidification

Michel Rappaz

The paper by Karma and Tourret (this volume) in this special issue focuses on multiscale modeling approaches ranging from atoms to microstructure. In the present one, the most recent and significant modeling contributions dealing with the scale of solidifi ...

Elsevier2016

Origin of Fermi-level pinning at GaAs/oxide interfaces through the hybrid functional study of defects

Davide Colleoni

Gallium arsenide is currently under scrutiny for replacing silicon in microelectronic devices due to its high carrier mobilities. However, the widespread use of this semiconductor is hampered by the intrinsic difficulty of producing high-quality interfaces ...

EPFL2015

Fermi-level pinning through defects at GaAs/oxide interfaces: A density functional study

Alfredo Pasquarello, Giacomo Francesco Leonardo Miceli, Davide Colleoni

Using density functional calculations, we study a set of candidate defects for Fermi-level pinning at GaAs/oxide interfaces. The set of considered defects comprises both bulklike and interfacial defects, including As antisites, Ga and As dangling bonds, th ...

American Physical Society2015

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