Publications associées à Arséniure d'aluminium

First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials

One of the fundamental properties of semiconductors is their ability to support highly tunable electric currents in the presence of electric fields or carrier concentration gradients. These properties are described by transport coefficients such as electro ...

IOP PUBLISHING LTD2020

Transcapacitances in EPFL HEMT Model

Jean-Michel Sallese, Farzan Jazaeri

In this article, we present a closed-form solution for transcapacitances in GaN HEMTs derived from a design-oriented charge-based model of the AlGaAs/GaAs- and AlGaN/GaN-based HEMTs that were recently proposed. The analytical expressions are based on the c ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Origin of Fermi-level pinning at GaAs/oxide interfaces through the hybrid functional study of defects

Davide Colleoni

Gallium arsenide is currently under scrutiny for replacing silicon in microelectronic devices due to its high carrier mobilities. However, the widespread use of this semiconductor is hampered by the intrinsic difficulty of producing high-quality interfaces ...

EPFL2015

A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire

Anna Fontcuberta i Morral, Xin Zhou, Silvija Gradecak

We review different strategies to achieve a three-dimensional energy bandgap modulation in a nanowire (NW) by the introduction of self-assembled 0D, 1D and 2D quantum structures, quantum dots (QDs), quantum wires (QWRs) and quantum wells (QWs). Starting wi ...

Royal Society of Chemistry2013

Nanoindentation cracking in gallium arsenide: Part II. TEM investigation

Johann Michler, Jacques Giovanola, Jean-Daniel Ganière, Jean-Marc Breguet, Cédric Pouvreau

The nanoindentation fracture behavior of gallium arsenide (GaAs) is examined from two perspectives in two parent papers. In the first paper (part I), we address the morphology of the crack field induced by different types of indenters by means of in situ n ...

Cambridge University Press2013

Nanoindentation cracking in gallium arsenide: Part I. In situ SEM nanoindentation

Johann Michler, Jacques Giovanola, Jean-Marc Breguet, Cédric Pouvreau

The nanoindentation fracture behavior of gallium arsenide (GaAs) is examined from two perspectives in two parent papers. The first paper (part I) focuses on in situ nanoindentation within a scanning electron microscope (SEM) and on fractographic observatio ...

Cambridge University Press2013

High-speed and low-noise AlInN/GaN HEMTs on SiC

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcus Gonschorek

A comparison of devices with different source-drain gaps has been performed on AlInN/GaN high electron mobility transistors (HEMTs) grown on SiC. The cut-off frequency is effectively improved through shrinking source drain space and reducing gate parasitic ...

Wiley2011

Localized and delocalized Ti 3d carriers in LaAlO3/SrTiO3 superlattices revealed by resonant inelastic x-ray scattering

Thorsten Schmitt, Joël Mesot

The important source of interface conductivity in LaAlO3/SrTiO3 heterostructures, the Ti 3d carriers, is probed with resonant inelastic x-ray scattering at the Ti 2p(3/2) edge of epitaxially grown superlattices. We reveal unambiguously the generation of bo ...

2011

Low-Noise Microwave Performance of 0.1 mu m Gate AlInN/GaN HEMTs on SiC

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcus Gonschorek

We report the first microwave noise characterization of AlInN/GaN HEMTs. Transistors with a 0.1 mu m gate implemented on a semi-insulating SiC substrate achieve a maximum current density of 1.92 A/mm at V-GS = 0 V, a measured transconductance g(M) = 480 mS ...

2010

III-nitride based microcavities : towards polariton condensation at room temperature

Gabriel Christmann

This PhD thesis work describes the study of III-nitride based planar microcavities operating in the strong coupling regime at room temperature. The aim is to use the nonlinear emission properties of such samples in realistic devices. Furthermore these stud ...

EPFL2009

InAIN/GaN metal-oxide-semiconductor high electron mobility transistor with Al2O3 insulating films grown by metal organic chemical vapor deposition using Ar and NH3 carrier gases

Nicolas Grandjean, Jean-François Carlin

Al2O3 thin films were deposited by a metal organic chemical vapour deposition on InAIN/GaN heterostructures using Ar or NH3 as a carrier gas. Effects of NH3 and Ar carrier gases on the electrical and structural properties of Al2O3/InAIN/GaN HEMT devices we ...

2009

Indentation fracture of gallium arsenide

Cédric Pouvreau

The scribe and break technique (or dicing) is a widely employed method in the industry of semiconductors to separate infrared laser diodes made from gallium arsenide (GaAs). The scribing step allows to create a precursor crack which is then propagated duri ...

EPFL2007

AlInN/GaN a suitable HEMT device for extremely high power high frequency applications

Nicolas Grandjean, Jean-François Carlin, Eric Feltin

AlInN/GaN unpassivated High Electron Mobility Transistor (HEMT) on Sapphire substrate has yielded a maximum drain current density close to 2 A/mm in steady state. Superior gate length downscaling than AlGaN/GaN devices has been observed owing to the possib ...

Ieee2007

Supramolecular assembly, chirality, and electronic properties of rubrene studied by STM and STS

This thesis presents the first experimental results of a scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) investigation of rubrene at the supramolecular, molecular and submolecular level. Based on its semiconducting and fluores ...

EPFL2006