Publications associées à Dosimètre

Performance evaluation of radon active sensors and passive dosimeters at low and high radon concentrations

Radon is a naturally occurring radioactive gas that has the potential to accumulate in buildings and over time, causes lung cancer in humans. Present methods for radon measurements are disparate, which pose challenges to benchmark radon concentrations and ...

Pergamon-Elsevier Science Ltd2024

Intra-pin Reaction Rate Measurements in the CROCUS Experimental Reactor

Andreas Pautz, Vincent Pierre Lamirand, Mathieu Hursin, Oskari Ville Pakari, Thomas Jean-François Ligonnet, Tom Mager

In response to the need for validating high-fidelity deterministic neutronics solvers capable of providing pin-resolved neutron flux distributions, intra-pin reaction rates measurements were performed in the CROCUS experimental reactor. A specially designe ...

2024

Characterization of a flexible a-Si:H detector for in vivo dosimetry in therapeutic x-ray beams

Sylvain Dunand, Nicolas Würsch, Luca Massimiliano Antognini, Jonathan Emanuel Thomet, Matthew James Large

BackgroundThe increasing use of complex and high dose-rate treatments in radiation therapy necessitates advanced detectors to provide accurate dosimetry. Rather than relying on pre-treatment quality assurance (QA) measurements alone, many countries are now ...

Wiley2024

Radiation Hardness of MALTA2, a Monolithic Active Pixel Sensor for Tracking Applications

Edoardo Charbon, Francesco Piro, Ashish Sharma

MALTA is a depleted monolithic active pixel sensor (DMAPS) developed in the Tower Semiconductor 180-nm CMOS imaging process. Monolithic CMOS sensors offer advantages over current hybrid imaging sensors in terms of both increased tracking performance due to ...

Ieee-Inst Electrical Electronics Engineers Inc2023

Hydrogenated amorphous silicon high flux x-ray detectors for synchrotron microbeam radiation therapy

Sylvain Dunand, Nicolas Würsch, Matthew James Large, Giulia Rossi

Objective. Microbeam radiation therapy (MRT) is an alternative emerging radiotherapy treatment modality which has demonstrated effective radioresistant tumour control while sparing surrounding healthy tissue in preclinical trials. This apparent selectivity ...

IOP Publishing Ltd2023

Design of an Instrumented Fuel Rod for Intra-pin Neutron Flux Measurements in the CROCUS Experimental Reactor

Andreas Pautz, Vincent Pierre Lamirand, Mathieu Hursin, Thomas Jean-François Ligonnet, Won Dong Shin, Tom Mager

In response to the need for validating high-fidelity deterministic neutronics solvers capable of pin-resolved neutron flux distributions, an instrumented fuel rod was designed for the experimental reactor CROCUS, operated by EPFL’s Laboratory for Reactor P ...

2023

Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

Christian Enz

This article investigates the device variability induced by the total ionizing dose (TID) effects in a commercial 16-nm bulk nFinFETs, using specially designed test structures and measurement procedures aimed at maximizing the matching between devices. DC ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Christian Enz

This article investigates the fin- and finger-number dependence of the total ionizing dose (TID) degradation in 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs designed with different numbers of fins and fingers are irradiated up to 500 Mrad(SiO ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Development of a Data Concentrator ASIC for the High Luminosity upgrade of the CMS Outer Tracker detector with tracking trigger

Simone Scarfì

With the increasing capabilities of the microelectronics technology, future particle detectors in high energy physics will be able to yield high-level features that are not only simple geometrical positions or energy measurement in the silicon sensors used ...

EPFL2021

Satellite-Based Personal UV Dose Estimation

Athanasios Nenes, David Vernez

Epidemiology and public health research relating to solar ultraviolet (UV) exposure usually relies on dosimetry to measure UV doses received by individuals. However, measurement errors affect each dosimetry measurement by unknown amounts, complicating the ...

2021

TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Christian Enz

This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs with several channel lengths are irradiated up to 1 Grad(SiO2) and then annealed for 24 h at 100 degrees C. Irradia ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Characterization and Modeling of Total Ionizing Dose Effects on Nanoscale MOSFETs for Particle Physics Experiments

Chunmin Zhang

Total ionizing radiation compromises electrical characteristics of microelectronic devices and even causes functional failures of integrated circuits. It has been identified as a potential threat to electronic components, especially those in high-energy ph ...

EPFL2021

Establishment of a Therapeutic Ratio for Gamma Knife Radiosurgery of Trigeminal Neuralgia: The Critical Importance of Biologically Effective Dose Versus Physical Dose

Constantin Tuleasca, Adrien Jean Régis Maurice Hilaire

OBJECTIVE: How variations of treatment time affect the safety and efficacy of Gamma Knife (GK) radiosurgery is a matter of considerable debate. With the relative simplicity of treatment planning for trigeminal neuralgia (TN), this question has been address ...

2020

Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses

Christian Enz

Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad(SiO2) and annealed at high temperatures. TID sensitivity depends on the channel len ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses

Christian Enz

In this paper, the total ionizing dose (TID) response of a commercial 28-nm high-k CMOS technology at ultrahigh doses is measured and discussed. The degradation of pMOSFETs depends not only on the channel width but also on the channel length. Short-channel ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Innovative Lab on Fiber dosimeters for ionizing radiation monitoring at ultra-high doses

Georgi Gorine, Federico Ravotti

We report on a innovative Lab on Fiber (LOF) dosimeter for ionizing radiation monitoring at ultra-high doses. The new dosimeter consists in a metallo-dielectric resonator at sub-wavelength scale supporting localized surface plasmon resonances realized on t ...

SPIE-INT SOC OPTICAL ENGINEERING2019

Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3

Nergiz Sahin Solmaz, Mustafa Berke Yelten, Sadik Ilik

This paper presents a modeling approach to simulate the impact of total ionizing dose (TID) degradation on low-power analog and mixed-signal circuits. The modeling approach has been performed on 180-nm n-type metal-oxide-semiconductor field-effect transist ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses

Christian Enz, Farzan Jazaeri, Chunmin Zhang

Using the Y-function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process. ...

IEEE2018

Shutdown dose rate measurements after the 2016 Deuterium-Deuterium campaign at JET

Olivier Sauter, Ambrogio Fasoli, Basil Duval, Stefano Coda, Martinus Gijs, Jonathan Graves, Yves Martin, Duccio Testa, Patrick Blanchard, Bruno Emanuel Ferreira De Sousa Correia, Alessandro Pau, Pierre-Thomas Paul Brun, Cristian Sommariva, Henri Weisen, Richard Pitts, Sun Hee Kim, Yann Camenen, Jan Horacek, Javier García Hernández, Marco Wischmeier, Mikhail Maslov, Nicola Vianello, Miguel Fernández Ruiz, Federico Nespoli, Antonio José Pereira de Figueiredo, Liang Yao, Yao Zhou, David Pfefferlé, Dalziel Joseph Wilson, Robin Humphry-Baker, Davide Galassi, José Pedro Rebelo Ferreira Marques, Ana Francisca Leal Silva Soares, Jonathan Marc Philippe Faustin, Daniel Scott Alessi, Arnout Lodewijk M Beckers, Julio Rodriguez, Hamish William Patten, Jonnathan Cesar Hidalgo Acosta, , , , , , , , ,

Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs

Christian Enz, Farzan Jazaeri, Chunmin Zhang

This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity L ...

2018