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Publications associées (25)

Demonstration of sawtooth period locking with power modulation in TCV plasmas

Olivier Sauter, Timothy Goodman, Federico Alberto Alfredo Felici

Corroborating evidence is presented that the sawtooth period can follow the modulation frequency of an externally applied high power electron cyclotron wave source. Precise, fast and robust open loop control of the sawtooth period with a continuously chang ...

IOP Publishing Ltd2012

Model Predictive Perimeter Control for Urban Areas with Macroscopic Fundamental Diagrams

Nikolaos Geroliminis, Mohsen Ramezani Ghalenoei, Jack Haddad

Recent analysis of empirical data from cities showed that a macroscopic fundamental diagram (MFD) of urban traffic provides for different network regions a unimodal, low-scatter relationship between network vehicle density and network space-mean flow. In t ...

Ieee Computer Soc2012

Low-Noise, High-Density Microelectronics for Multi-Mode Screening of Excitable Biological Cells

Urs Alexander Müller

In the past decades, two recording tools have established themselves as the working horses in the field of electrophysiological cell research: the microelectrode array (MEA) and the optical fluorescence imaging. The former is a grid of miniature electrodes ...

EPFL2012

A 16-channel 220 µW neural recording IC with embedded delta compression

Alexandre Schmid, Yusuf Leblebici, Vahid Majidzadeh Bafar

A 16-channel neural action potential recording IC suitable for large-scale integration with multi-electrode arrays (MEAs) is presented. A closed-loop gain of 60 dB in the action potential band is achieved by cascading differential gain-stages utilizing a n ...

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Low-Noise Microwave Performance of 0.1 mu m Gate AlInN/GaN HEMTs on SiC

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcus Gonschorek

We report the first microwave noise characterization of AlInN/GaN HEMTs. Transistors with a 0.1 mu m gate implemented on a semi-insulating SiC substrate achieve a maximum current density of 1.92 A/mm at V-GS = 0 V, a measured transconductance g(M) = 480 mS ...

2010

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