Relationship between mathematics and physics

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Publications associées (4)

A review of the modeling approaches of the lightning M-component with special attention to their current and electric field characteristics

Farhad Rachidi-Haeri, Marcos Rubinstein, Mohammad Azadifar, Carlo Alberto Nucci, Qi Li

In this paper, we present the characteristics of current, electric fields and modeling approaches of lightning M-component mode of charge transfer. We consider both the classical M-components (occurring after return strokes) and M-component-type ICC (Initi ...

Elsevier2023

Cryogenic MOS Transistor Model

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to strong inversion and in the linear and saturation regimes. The model is dev ...

2018

Threshold power for the transition into H-mode for H, D, and He plasmas in TCV

Basil Duval, Yves Martin, Benoît Labit, Laurie Porte, Alexander Karpushov, Roland Behn

The threshold power for the transition into H-mode with hydrogen (H), deuterium (D), and helium (He) as majority ion species has been evaluated from a series of dedicated experiments on the tokamak TCV. Identical plasma configurations with a single-null X- ...

Iop Publishing Ltd2015

A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET

Jean-Michel Sallese, François Krummenacher, Antonios Bazigos, Matthias Bucher

This paper presents a novel physics-based analytical compact model for the drift region of a high-voltage metal-oxide-semiconductor field-effect transistor (HV-MOSFET). According to this model, the drift region is considered as a simple 1-D problem, just a ...

2011

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