Publications associées à Nanoelectromechanical relay

Resonant Transducers Consisting of Graphene Ribbons with Attached Proof Masses for NEMS Sensors

Luis Guillermo Villanueva Torrijo, Daniel Moreno Garcia

The unique mechanical and electrical properties of graphene make it an exciting material for nanoelectromechanical systems (NEMS). NEMS resonators with graphene springs facilitate studies of graphene's fundamental material characteristics and thus enable i ...

Amer Chemical Soc2023

A new versatile hybrid MEMS technology for high sensitivity, fluid proof sensing applications

Matthias Neuenschwander

The field of micro electromechanical systems (MEMS) evolved from the microelectronic industry and the technologies developed to fabricate integrated circuits. As a result, MEMS are commonly fabricated on silicon wafers. The development of MEMS has been dri ...

EPFL2022

Design and Manufacturing of an Electrostatic MEMS Relay for High Power Applications

Yves Perriard, Yoan René Cyrille Civet, Christian Köchli, Florian Louis Copt

This paper addresses the design and manufacturing of a crab-leg based MEMS relay for a high power application. Thanks to a contact resistance lower than 100 mΩ, the relay can hold a current in the order of magnitude of an Ampere without further thermal lim ...

2021

Manufacture and characterization of graphene membranes with suspended silicon proof masses for MEMS and NEMS applications

Luis Guillermo Villanueva Torrijo, Sayedeh Shirin Afyouni Akbari, Stefan Wagner

Graphene's unparalleled strength, chemical stability, ultimate surface-to-volume ratio and excellent electronic properties make it an ideal candidate as a material for membranes in micro- and nanoelectromechanical systems (MEMS and NEMS). However, the inte ...

2020

Self-sensing, tunable monolayer MoS2 nanoelectromechanical resonators

Andras Kis, Dumitru Dumcenco, Guilherme Migliato Marega, Sajedeh Manzeli

Excellent mechanical properties and the presence of piezoresistivity make single layers of transition metal dichalcogenides (TMDCs) viable candidates for integration in nanoelectromechanical systems (NEMS). We report on the realization of electromechanical ...

Nature Research2019

Dielectric Actuation Techniques at the Nanoscale: Piezoelectricity and Flexoelectricity

Kaitlin Marie Howell

Micro- and nanoelectromechanical systems (MEMS/NEMS) have long shown their potential to disrupt the established technologies. Over the past 15 years, MEMS have become fundamental components in filters, accelerometers, gyroscopes and gas sensors. MEMS are n ...

EPFL2019

Ion beam etching redeposition for 3D multimaterial nanostructure manufacturing

Philippe Renaud, Arnaud Bertsch, Benoît Xavier Emmanuel Desbiolles

A novel fabrication method based on the local sputtering of photoresist sidewalls during ion beam etching is presented. This method allows for the manufacture of three-dimensional multimaterial nanostructures at the wafer scale in only four process steps. ...

2019

Piezoelectric Nanoelectromechanical Systems

Luis Guillermo Villanueva Torrijo, Annalisa De Pastina, Tom Larsen, Andrea Lozzi, Kaitlin Marie Howell, Muhammad Faizan

In this paper we describe five different transduction techniques for the motion of NEMS resonators. We describe how these techniques differ from those used for MEMS and how centrosymmetric or amorphous materials can be used to fabricate NEMS. ...

2017

High Performance Tri-gate GaN Power MOSHEMTs on Silicon Substrate

Elison de Nazareth Matioli, Jun Ma

We demonstrate high-performance GaN power metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on silicon substrate based on a nanowire tri-gate architecture. The common issue of partial removal of carriers by nanowire etching in GaN tri ...

Institute of Electrical and Electronics Engineers2017

Electrostatically actuated MEMs relay for high power applications

Yves Perriard, Christian Köchli, Florian Louis Copt

In this paper, a MEMs relay for high power application is investigated. This relay has to hold a current of the order of magnitude of the Ampere and is subject to harsh environment such as high temperature or vibrations which can lead to a premature dysfun ...

2016

Designing Low Power and Durable Digital Blocks Using Shadow Nanoelectromechanical Relays

Paolo Ienne, Hossein Asadi, Sadegh Yazdanshenas

Nanoelectromechanical (NEM) relays are a promising emerging technology that has gained widespread research attention due to its zero leakage current, sharp ON-OFF transitions, and complementary metal-oxide-semiconductor compatibility. As a result, NEM rela ...

Institute of Electrical and Electronics Engineers2016

NEM Relay Design with Biconditional Binary Decision Diagrams

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù, Winston Jason Haaswijk

In this paper, we present an improved design flow for nanoelectromechanical (NEM) relay-based combinational logic circuits. Six-terminal NEM relays can be programmed to act as 2-to-1 multiplexers. We can therefore use NEM relays to implement arbitrary comb ...

IEEE2015

Graphene for Nanoelectronic Applications

Pankaj Sharma

During the past decade, graphene --- a monolayer of carbon atoms --- has attracted enormous interest for its use in nanoelectronic device applications. The absence of bandgap, however, has stalled its use both in logic (inability to turn off) and radio fre ...

EPFL2015

Energy and Latency Optimization in NEM Relay-Based Digital Circuits

Mihai Adrian Ionescu, Antonios Bazigos, Daniel Grogg

Digital circuits based on nanoelectromechanical (NEM) relays hold out the potential of providing an energy efficiency unachievable by conventional CMOS technology. This paper presents a detailed analysis of the operating characteristics of fabricated curve ...

Ieee-Inst Electrical Electronics Engineers Inc2014

A 6.7 MHz Nanoelectromechanical Ring Oscillator Using Curved Cantilever Switches Coated with Amorphous Carbon

Montserrat Fernandez-Bolanos Badia, Antonios Bazigos, Daniel Grogg

Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low power digital electronics. This paper reports the demonstration of the first ring oscillator built using cell-level digit ...

IEEE2014

Nanoelectromechanical digital logic circuits using curved cantilever switches with amorphous-carbon-coated contacts

Montserrat Fernandez-Bolanos Badia, Antonios Bazigos, Daniel Grogg

Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low-power digital electronics. This paper reports the demonstration of prototype circuits including the first 3-stage ring os ...

2014

Electromagnetic Performance of RF NEMS Graphene Capacitive Switches

Mihai Adrian Ionescu, Julien Perruisseau-Carrier, Clara-Fausta Moldovan, Pankaj Sharma

The RF performance of a nanoelectromechanical systems (NEMS) capacitive switch based on graphene is evaluated. Our results show that graphene can be a good candidate for the membrane of RF NEMS switches in applications where low actuation voltage and fast ...

Institute of Electrical and Electronics Engineers2014

When nothing is constant but change: Adaptive and sensorial materials and their impact on product design

Paul Muralt, Jürgen Brugger, Nikhil Gupta

This article is the preface to the Special Issue of the Journal of Intelligent Material Systems and Structures on occasion of the Symposium A53 MEMS/NEMS for Sensorial and Actorial Materials' held at the Euromat 2011 Conference, Montpellier, France, Septem ...

Sage Publications Ltd2013

Single Active Nanoelectromechanical Tuning Fork Front-End Radio-Frequency Receiver

Mihai Adrian Ionescu, Alexandru Rusu, Sebastian Thimotee Bartsch

Nanoelectromechanical systems (NEMS) offer the potential to revolutionize fundamental methods employed for signal processing in today's telecommunication systems,1-4 owing to their spectral purity and the prospect of integration with existing technology. I ...

Institute of Physics2012

Towards fabrication of Vertical Slit Field Effect Transistor (VeSFET) as new device for nano-scale CMOS technology

Jean-Michel Sallese, Didier Bouvet, Lucian Barbut

This paper proposes a CMOS based process for Vertical Slit Field Effect Transistors. The central part of the device, namely, the vertical slit, is defined by using electron beam lithography and silicon dry etching. In order to verify the validity and the r ...

IEEE2011