Publications associées à Épitaxie par jet moléculaire

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

EPFL2024

A continuous-wave and pulsed X-band electron spin resonance spectrometer operating in ultra-high vacuum for the study of low dimensional spin ensembles

Giovanni Boero, Fabio Donati, Soyoung Oh

We report the development of a continuous-wave and pulsed X-band electron spin resonance (ESR) spectrometer for the study of spins on ordered surfaces down to cryogenic temperatures. The spectrometer operates in ultra-high vacuum and utilizes a half-wavele ...

Aip Publishing2024

Scalable Approaches to III-V Nanowires for Photodetection

Nicholas Paul Morgan

III-V semiconductor nanowires have unique properties that make them ideal for advanced photodetectors on inexpensive substrates. For example, they exhibit enhanced or polarization-dependent light absorption, they can form complex heterostructures, and thei ...

EPFL2023

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Anna Fontcuberta i Morral, Alok Rudra, Didem Dede, Valerio Piazza, Nicholas Paul Morgan, Vladimir Dubrovskii, Marie Sophie Sanglé-Ferrière, Ann-Kristin Stief

We outline the growth mechanismand shape evolution of GaAsnanoridges by selective area MOVPE with three well-identified, distinctstages of growth. ...

AMER CHEMICAL SOC2023

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

GeSn as next-generation material for short-wave infrared single-photon detection

Andrea Giunto

In recent years, the automotive industry has aspired to bring self-driving vehicles to the general public and light detection and ranging (LiDAR) sensors have emerged as the preferred solution for car vision systems. At present, LiDAR technologies employ e ...

EPFL2023

Semiconductor-based device architectures in multimaterial fibers

William Nicolas Duncan Esposito

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

EPFL2023

Symmetry-Induced Singlet-Triplet Inversions in Non-Alternant Hydrocarbons

Anne-Clémence Corminboeuf, Jacob Terence Blaskovits, Marc Hamilton Folkmann Garner

Molecules with inversion of the singlet and triplet excited-state energies are highly promising for the development of organic light-emitting diodes (OLEDs). To date, azaphenalenes are the only class of molecules where these inversions have been identified ...

Wiley-VCH Verlag GmbH2023

Zn3P2 as an earth-abundant photovoltaic material: from growth to device

Rajrupa Paul

The development of cost-effective and earth-abundant semiconducting materials is imperative for the sustainable deployment of photovoltaic technology. Zinc phosphide (Zn3P2) is a promising candidate for terawatt-scale electricity generation. It has a near- ...

EPFL2023

X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate

Sylvain Dunand, Mikaël Martino, Nicolas Würsch, Luca Massimiliano Antognini, Matthew James Large

Hydrogenated amorphous silicon (a-Si:H) is a well known material for its radiation resistance and for the possibility of deposition on flexible substrates like Polyimide (PI), polyethylene terephthalate (PET) or polyethylene naphthalate (PEN). Due to the p ...

IEEE2023

Liquid film instability of an internally coated horizontal tube

François Gallaire, Edouard Boujo, Yves-Marie François Ducimetière, Shahab Eghbali

We study numerically and theoretically the gravity-driven flow of a viscous liquid film coating the inner side of a horizontal cylindrical tube and surrounding a shear-free dynamically inert gaseous core. The liquid-gas interface is prone to the Rayleigh-P ...

AMER PHYSICAL SOC2023

Monocrystalline 1.7-eV MgCdTe solar cells

Mathieu Gérard Boccard

Monocrystalline 1.7 eV Mg0.13Cd0.87Te/MgxCd1-xTe (x > 0.13) double heterostructure (DH) solar cells with varying Mg compositions in the barrier layers are grown by molecular beam epitaxy. A Mg0.13Cd0.87Te/Mg0.37Cd0.63Te DH solar cell featuring abrupt inter ...

AIP Publishing2022

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

Elison de Nazareth Matioli, Alessandro Floriduz

In this note, we demonstrate the high-temperature growth of GaN on ScAlMgO4 substrates by metalorganic vapor phase epitaxy when a thin Al film is deposited ex situ on the ScAlMgO4 surface, prior to GaN growth. Mirror-like high-quality GaN epitaxial layers ...

IOP Publishing Ltd2022

Controlled filamentation instability as a scalable fabrication approach to flexible metamaterials

Fabien Sorin, Pierre-Luc Eloi Piveteau, William Nicolas Duncan Esposito, Louis Marie Philippe Martin-Monier

Long and flexible arrays of nanowires find impactful applications in sensing, photonics, and energy harvesting. Conventional manufacturing relies largely on lithographic methods limited in wafer size, rigidity, and machine write time. Here, we report a sca ...

Nature Portfolio2022

Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks

Anna Fontcuberta i Morral, Alok Rudra, Andrea Giunto, Santhanu Panikar Ramanandan, Nicholas Paul Morgan

Holes in germanium nanowires have emerged as a realistic platform for quantum computing based on spin qubit logic. On top of the large spin–orbit coupling that allows fast qubit operation, nanowire geometry and orientation can be tuned to cancel out charge ...

American Chemical Society (ACS)2022

Optical spectroscopy of earth-abundant zinc pnictides for photovoltaics

Elias Zsolt Stutz

Zinc phosphide (Zn3P2) is an earth-abundant semiconductor with promising properties for applications as an absorber in photovoltaics. To beat the 40 years old record power conversion efficiency of solar cells made with this material, a deep understanding o ...

EPFL2022

Spectroscopy and dynamics at liquid water interfaces

Bruno Credidio

This thesis is a detailed description of three experimental investigations on aqueous interfaces. All projects made use of the microjet technology or the more recently developed flat-jet technique which enables the implementation of liquid water in vacuum ...

EPFL2022

Synthesis and properties of heterostructures in nanowires and 2-D materials

Akshay Balgarkashi

Modern solid-state devices were made possible by the discovery of semiconductor heterostructures. Heterostructures offer the ability to fabricate low-dimensional nanostructures such as quantum dots which can restrain carriers in all three-directions. Quant ...

EPFL2022

Waveguide and Gas: the Advent of a New Tool for Photonics

Luc Thévenaz, Flavien Gyger

The realisation of hollow-core fibres and nano-waveguides offers a unique opportunity to optimise the interactions between light and a gaseous medium. Stimulated Brillouin scattering is exploited to achieve unprecedented levels of amplification and to real ...

IEEE2021

Doping challenges and pathways to industrial scalability of III–V nanowire arrays

Anna Fontcuberta i Morral, Lucas Güniat, Valerio Piazza, Wonjong Kim

Semiconductor nanowires (NWs) have been investigated for decades, but their application into commercial products is still difficult to achieve, with triggering causes related to the fabrication cost and structure complexity. Dopant control at the nanoscale ...

2021