Static Random Access Memory

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Publications associées (31)

Gain-Cell Embedded DRAMs: Modeling and Design Space

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman, Andrea Bonetti

Among the different types of dynamic random-access memories (DRAMs), gain-cell embedded DRAM (GC-eDRAM) is a compact, low-power, and CMOS-compatible alternative to conventional static random-access memory (SRAM). GC-eDRAM achieves high memory density, as i ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2 K. Interface traps close to the band edge modify the saturating temperature behavior of the threshold voltage observed in cryogenic measurements. Dopant freezeout, ...

2020

Sweat monitoring with CMOS compatible technology: ISFETS and beyond

Francesco Bellando

In recent years, sweat has gained increasing attention from the scientific community as a new analyte for health monitoring. The main advantage with respect to the "Gold Standard" for laboratory analysis, i.e. blood, is of course the possibility of perform ...

EPFL2020

Using an antenna as a tool for studying microturbulence and zonal structures in tokamaks with a global gyrokinetic GPU-enabled particle-in-cell code

Noé Thomas Elie Ohana

In order to get a better understanding of the interaction of plasma microinstabilities and associated turbulence with specific modes, an antenna is implemented in the global gyrokinetic Particle-In-Cell (PIC) code ORB5. It consists in applying an external ...

EPFL2020

Gyrokinetic simulations on many- and multi-core architectures with the global electromagnetic Particle-In-Cell Code ORB5

Laurent Villard, Stephan Brunner, Emmanuel Lanti, Noé Thomas Elie Ohana, Claudio Gheller

Gyrokinetic codes in plasma physics need outstanding computational resources to solve increasingly complex problems, requiring the effective exploitation of cutting-edge HPC architectures. This paper focuses on the enabling of ORB5, a state-of-the-art, fir ...

2021

Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses

Christian Enz

Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad(SiO2) and annealed at high temperatures. TID sensitivity depends on the channel len ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Exploration Methodology for BTI-Induced Failures on RRAM-Based Edge AI Systems

David Atienza Alonso, Alexandre Sébastien Julien Levisse, Miguel Peon Quiros, Marco Antonio Rios

Resistive switching memory technologies (RRAM) are seen by most of the scientific community as an enabler for Edge-level applications such as embedded deep Learning, AI or signal processing of audio and video signals. However, going beyond a "simple'' repl ...

IEEE2020

Gain-Cell Embedded DRAMs: Modeling and Design Space

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman, Andrea Bonetti

Among the different types of DRAMs, gain-cell embedded DRAM (GC-eDRAM) is a compact, low-power and CMOS-compatible alternative to conventional SRAM. GC-eDRAM achieves high memory density as it relies on a storage cell that can be implemented with as few as ...

IEEE2020

Record thermopower found in an IrMn-based spintronic stack

Jean-Philippe Ansermet, Peng Gao, Sa Tu, Haiming Yu, Junfeng Hu, Jianyu Zhang, Yao Zhang, Song Liu

The Seebeck effect converts thermal gradients into electricity. As an approach to power technologies in the current Internet-of-Things era, on-chip energy harvesting is highly attractive, and to be effective, demands thin film materials with large Seebeck ...

Nature Research2020

A 24 kb Single-Well Mixed 3T Gain-Cell eDRAM with Body-Bias in 28 nm FD-SOI for Refresh-Free DSP Applications

Andreas Peter Burg, Robert Giterman, Cosimo Aprile, Yusuf Leblebici, Andrea Bonetti, Jonathan Emmanuel D Narinx, Nicolas Claude Frigerio

Logic-compatible gain-cell embedded DRAM (GC-eDRAM) is an emerging alternative to conventional SRAM for memory-dominated system-on-chip (SoC) designs due to its high-density, low-power, and two-ported operation. Although GCs have a limited data retention t ...

IEEE2019

Data-Retention-Time Characterization of Gain-Cell eDRAMs across the Design and Variations Space

Andreas Peter Burg, Andrea Bonetti

The rise of data-intensive applications has increased the demand for high-density and low-power embedded memories. Among them, the gain-cell embedded DRAM (GC-eDRAM) is a suitable alternative to the static random access memory (SRAM) due to its high memory ...

IEEE2019

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