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Publications associées (32)

Optimization of X-mode electron cyclotron current drive in high-electron-temperature plasma in the EAST tokamak

Joan Decker, Chunmin Zhang, Fang Liu

A discharge with electron temperature up to 14 keV has been achieved in EAST. Analysis of the electron cyclotron current drive (ECCD) efficiency at high electron temperature under EAST parameters is presented using C3PO/LUKE code. Simulation results show t ...

2023

Phonons, electron-phonon coupling and charge transport in low-dimensional materials

Norma Rivano

Over the past few decades, nanostructures have garnered significant attention due to their potential for embodying new physical paradigms and delivering cutting-edge technological applications. Dimensionality strongly affects the vibrational, electron-phon ...

EPFL2023

Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté

Microcavity polaritons are strongly interacting hybrid light-matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in microring resonator ...

AIP Publishing2023

Electronic Structure of Few-Layer Black Phosphorus from & mu;-ARPES

Nicola Marzari, Marco Gibertini, Samuel Poncé, Christophe Berthod

Black phosphorus (BP) stands out among two-dimensional(2D) semiconductorsbecause of its high mobility and thickness dependent direct band gap.However, the quasiparticle band structure of ultrathin BP has remainedinaccessible to experiment thus far. Here we ...

AMER CHEMICAL SOC2023

A Triethyleneglycol C-60 Mono-adduct Derivative for Efficient Electron Transport in Inverted Perovskite Solar Cells

Mohammad Khaja Nazeeruddin, Konstantina Kalliopi Armadorou, Tobias Seewald

Inverted perovskite solar cells (PSCs) have attracted increasing attention in recent years owing to their low-temperature fabrication proces s. However, they suffer from a limited number of electron transport materials available with [6,6]-phenyl C-61 buty ...

WILEY-V C H VERLAG GMBH2023

Momentum-Space Imaging of Ultra-Thin Electron Liquids in δ-Doped Silicon

Gabriel Aeppli, Nicolò D'Anna

Two-dimensional dopant layers (δ-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs ...

WILEY2023

Competition between Carrier Injection and Structural Distortions in Electron-Doped Perovskite Nickelate Thin Films

Duncan Thomas Lindsay Alexander, Bernat Mundet, Jonathan Spring, Jean-Marc Triscone

The discovery of superconductivity in doped infinite-layer nickelate thin films has brought increased attention to the behavior of the doped perovskite phase. Despite this interest, the majority of existing studies pertain to hole-doped perovskite rare-ear ...

WILEY2023

Transport and Interfacial Injection of d-Band Hot Holes Control Plasmonic Chemistry

Giulia Tagliabue, Milad Sabzehparvar, Alan Richard Bowman, Omer Can Karaman, Fateme Kiani Shahvandi

Harnessing nonequilibrium hot carriers from plasmonic metal nanostructures constitutes a vibrant research field with the potential to control photochemical reactions, particularly for solar fuel generation. However, a comprehensive understanding of the int ...

AMER CHEMICAL SOC2023

Study of fast-ion-driven toroidal Alfvén eigenmodes impacting on the global confinement in TCV L-mode plasmas

Stefano Coda, Laurent Villard, Stephan Brunner, Justin Richard Ball, Oleg Krutkin, Luke Simons, Umesh Kumar, Baruch Rofman, Jesús Poley Sanjuán, Javier García Hernández, Matteo Vallar, Aylwin Iantchenko, Samuele Mazzi

Following recent observations of unstable Toroidal Alfven Eigenmodes (TAEs) in a counter-current Neutral Beam Injection (NBI) scenario developed in TCV, an in-depth analysis of the impact of such modes on the global confinement and performance is carried o ...

2023

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

Crossing the ballistic-ohmic transition via high energy electron irradiation

Philip Johannes Walter Moll, Matthias Carsten Putzke, Maja Deborah Bachmann

The delafossite metal PtCoO2 is among the highest-purity materials known, with low-temperature mean free path up to 5 mu m in the best as-grown single crystals. It exhibits a strongly faceted, nearly hexagonal Fermi surface. This property has profound cons ...

AMER PHYSICAL SOC2023

Can dd excitations mediate pairing?

Christophe Berthod, Francesco Barantani

The Cu-3d states in the high-T-c cuprates are often described as a single band of 3d(x2-y2) states, with the other four 3d states having about 2 to 3 eV higher energy due to the lower-than-octahedral crystal field at the copper sites. However, excitations ...

Elsevier2023

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