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Publications associées (31)

Hard and Soft Switching Losses in Power Converters: Role of Transistor Output Capacitance

Palliyage Srilak Nirmana Perera

To best utilize power converters, a sound understanding of the relationship between the circuit topology and the power-semiconductor-device characteristics is required. This is especially important in high-frequency switching, where device parasitics start ...

EPFL2022

Experimental investigation of a keying joint cast in UHPFRC between precast UHPFRC bridge elements

Eugen Brühwiler, Numa Joy Bertola, Ngoc Thanh Trinh, Enrique García

Ultra High-Performance Fiber-Reinforced Cementitious Composite (UHPFRC) is increasingly popular for new structural designs thanks to its high resistance both in tension and compression. When UHPFRC is complemented with steel reinforcing bars or prestressin ...

2022

Influence of amount of shear reinforcement and its post-yield response on the shear resistance of reinforced concrete members

Aurelio Muttoni, Miguel Fernández Ruiz, Frédéric Monney

The minimum amount of shear reinforcement to be provided in reinforced concrete members has been a topic of debate and research for decades without reaching a consensus. Defining such values is however instrumental to build in an economic manner and to saf ...

ERNST & SOHN2022

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Elison de Nazareth Matioli, Luca Nela, Catherine Erine, Amirmohammad Miran Zadeh

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

2022

3D printing of elastomeric mechanical sensors designed for human motion monitoring

Ryan Mitchell van Dommelen

In this thesis several advances are made to the emerging field of 3D printed mechanical sensors. Techniques and processes were developed to enable the integration of highly conductive, and capacitive and piezoresistive sensing features embedded within 3D p ...

EPFL2022

A perspective on multi-channel technology for the next-generation of GaN power devices

Elison de Nazareth Matioli, Luca Nela

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

AIP Publishing2022

Contact Design for Silicon Heterojunction Solar Cells

Luca Massimiliano Antognini

Today more than ever the world needs clean energy sources and thus a fast deployment and scaling up of the photovoltaic industry. In this context improving solar cell efficiency plays a major role. In order to achieve the maximum single junction efficiency ...

EPFL2022

High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing

Mihai Adrian Ionescu, Teodor Rosca, Fatemeh Qaderi Rahaqi

In this work we propose and experimentally validate a relaxation spiking oscillator architecture with ultra-high tuning range (higher than 400%, from 5KHz to more than 25kHz when the control voltage is varied from 2.5 to 5V) that exploits the reversible me ...

IEEE2021

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Halil Kerim Yildirim, Jun Ma, Luca Nela, Catherine Erine

AlGaN/GaN devices have shown outstanding potential for power conversion applications. However, despite the recent progress, their performance is still far from what the material can offer in terms of on-resistance and breakdown voltage. To address this cha ...

IEEE2021

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Chao Liu, Alessandro Floriduz, Reza Soleiman Zadeh Ardebili

We demonstrate quasi-vertical reverse blocking (RB) MOSFETs on 6.7 mu m thick GaN grown on a 6 inch Si substrate by metalorganic chemical vapor deposition. The RB capability was achieved by replacing the ohmic drain with a quasi-vertical Schottky drain, re ...

IOP PUBLISHING LTD2021

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