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Publications associées (29)

Origin of Fermi-level pinning at GaAs/oxide interfaces through the hybrid functional study of defects

Davide Colleoni

Gallium arsenide is currently under scrutiny for replacing silicon in microelectronic devices due to its high carrier mobilities. However, the widespread use of this semiconductor is hampered by the intrinsic difficulty of producing high-quality interfaces ...

EPFL2015

Origin of Fermi-level pinning at GaAs surfaces and interfaces

Alfredo Pasquarello, Giacomo Francesco Leonardo Miceli, Davide Colleoni

Through first-principles simulation methods, we assign the origin of Fermi-level pinning at GaAs surfaces and interfaces to the bistability between the As-As dimer and two As dangling bonds, which transform into each other upon charge trapping. This defect ...

Institute of Physics2014

Impact of Annealing on the Early Hydration of Tricalcium Silicate

Karen Scrivener, Marco Cantoni, Amélie Bazzoni

It was recently proposed that the induction period observed during the hydration of tricalcium silicate could be explained by the build-up of ions in solution. Due to the importance of defects in this mechanism, this work describes the effect of different ...

Wiley-Blackwell2014

Molecular dynamics simulations of irradiation of alpha-Fe thin films with energetic Fe ions under channeling conditions

Anna Prokhodtseva

Using molecular dynamics simulations with recent interatomic potentials developed for Fe, we have studied the defects in thin films of pure bcc Fe induced by the displacement cascade produced by Fe atoms of 50, 100, and 150 keV impinging under a channeling ...

Elsevier Science Bv2014

Controlled growth of a line defect in graphene and implications for gate-tunable valley filtering

Oleg Yazyev, Gabriel Albert Autes, Jie Chen, Fernando Gargiulo

Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means of simultaneous e ...

Amer Physical Soc2014

Defect energy levels of the As-As dimer at InGaAs/oxide interfaces: A first principles study

Alfredo Pasquarello, Giacomo Francesco Leonardo Miceli

Charge transition levels of the As-As dimer defect at the InGaAs/Al2O3 interface are determined through density-functional calculations. At variance with the GaAs/Al2O3 interface where this defect gives rise to states within the band gap, its defect levels ...

Elsevier2013

Experimental visualization of scattering at defects in electronic transport through a single atomic junction

Klaus Kern, Peter Wahl

For electronic transport at the nanoscale, coherent scattering at defects plays an important role. Therefore, the capability of visualizing the influence of defects on the conductivity of single atomic junctions may benefit the development of future nano-e ...

Amer Physical Soc2013

Effect of transverse load on the critical current of a coated conductor Roebel cable

Pierluigi Bruzzone, Davide Uglietti, Rainer Wesche

Roebel cables are one possible option for use in the manufacture of high current conductors for various technical applications. In this work the behaviour of critical current under transverse loads up to 90 MPa was studied in coated conductor Roebel cables ...

2013

Nonlinear Quantum Optomechanics via Individual Intrinsic Two-Level Defects

Tobias Kippenberg, Vivishek Sudhir

We propose to use the intrinsic two-level system (TLS) defect states found naturally in integrated optomechanical devices for exploring cavity QED-like phenomena with localized phonons. The Jaynes-Cummings-type interaction between TLS and mechanics can rea ...

American Physical Society2013

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