Recherche

Afficher tous les résultats pour

Accueil

Personne

Aïcha Hessler-Wyser

À propos
Confidentialité
Mentions légales

Graph Chatbot

Publications associées (100)

Bandgap engineering of indium gallium nitride layers grown by plasma-enhanced chemical vapor deposition

Christophe Ballif, Aïcha Hessler-Wyser, Nicolas Würsch, Franz-Josef Haug, Mathieu Gérard Boccard, Jonathan Emanuel Thomet

This paper reports on the fabrication of In xGa 1 - xN (InGaN) layers with various compositions ranging from InN to GaN using a cost-effective low-temperature plasma-enhanced chemical vapor deposition (PECVD) method and analyzes the influence of deposition ...

2022

Microwave plasma-assisted reactive HiPIMS of InN films: Plasma environment and material characterisation

Aïcha Hessler-Wyser, Johann Michler, Jonathan Emanuel Thomet, Caroline Hain, Thomas Nelis

This work focuses on the low temperature fabrication process of InN thin films via microwave plasma-assisted reactive high power impulse magnetron sputtering (MAR-HiPIMS). The influence of microwave plasma on the HiPIMS discharge process at various nitroge ...

ELSEVIER SCIENCE SA2022

From pulsed-DCMS and HiPIMS to microwave plasma-assisted sputtering: Their influence on the properties of diamond-like carbon films

Aïcha Hessler-Wyser, Johann Michler, David Brown, Caroline Hain, Thomas Nelis

The fabrication of high-hardness non-hydrogenated diamond-like carbon (DLC) via standard magnetron sputtering (MS) is often hindered by the low sputtering yields and ionisation rates of carbon, therefore investigations into pulsed alternatives of MS, else ...

ELSEVIER SCIENCE SA2022

Evaluation of secondary electron intensities for dopant profiling in ion implanted semiconductors: a correlative study combining SE, SIMS and ECV methods

Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Philippe Wyss, Franz-Josef Haug, Mario Joe Lehmann, Audrey Marie Isabelle Morisset

This study evaluates the secondary electron (SE) dopant contrast in scanning electron microscopy (SEM) and helium ion microscopy (HIM) on boron implanted silicon sample. Complementary techniques like secondary ion mass spectrometry and electrochemical capa ...

IOP PUBLISHING LTD2021

Passivating Polysilicon Recombination Junctions for Crystalline Silicon Solar Cells

Christophe Ballif, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Philippe Wyss, Franz-Josef Haug, Mario Joe Lehmann, Andrea Ingenito, Audrey Marie Isabelle Morisset

Polysilicon recombination junctions whose n-type bottom layers double as a passivating contact to the silicon surface are investigated. Such recombination junctions are a key element in the interconnection of tandem devices with a silicon bottom cell, and ...

2021

Quantification of hydrogen in nanostructured hydrogenated passivating contacts for silicon photovoltaics combining SIMS-APT-TEM: A multiscale correlative approach

Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Franz-Josef Haug, Mario Joe Lehmann

Multiscale characterization of the hydrogenation process of silicon solar cell contacts based on c-Si/SiOx/ncSiCx(p) has been performed by combining dynamic secondary ion mass-spectrometry (D-SIMS), atom probe tomography (APT), and transmission electron mi ...

ELSEVIER2021

Quantifying competitive grain overgrowth in polycrystalline ZnO thin films

Christophe Ballif, Aïcha Hessler-Wyser, Sylvain Nicolay, Arthur Brian Aebersold, Cécile Hébert, Duncan Thomas Lindsay Alexander, Lorenzo Fanni

2019

A method for quantitative nanoscale imaging of dopant distributions using secondary ion mass spectrometry: an application example in silicon photovoltaics

Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Franz-Josef Haug, Mario Joe Lehmann, Gizem Nogay, Andrea Ingenito

A method for rapid quantitative imaging of dopant distribution using secondary ion mass spectrometry (SIMS) is described. The method is based on SIMS imaging of the cross-section of a reference sample with a known concentration profile. It is demonstrated ...

2019

Zr-doped indium oxide electrodes: Annealing and thickness effects on microstructure and carrier transport

Christophe Ballif, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Mathieu Gérard Boccard, Monica Morales Masis, Federica Landucci, Oscar Esteban Rucavado Leandro

Zr-doped indium oxide (In2O3:Zr) has been shown to satisfy the requirements of low resistance, wide band gap, and high infrared transmittance for application as a front contact in broadband solar cells. However, the reduction of indium usage in front of tr ...

AMER PHYSICAL SOC2019

Field test and electrode optimization of electrodynamic cleaning systems for solar panels

Christophe Ballif, Aïcha Hessler-Wyser, Nicolas Badel, Antonin Faes, Jacques Levrat, Nicolas Würsch, Matthieu Despeisse

Soiling is the major cause of power loss of photovoltaics (PV) and concentrated solar power (CSP) in desert areas. Electrodynamic cleaning system (EDS) is an automatic and water-free integrated cleaning system for mirrors or solar panels, which uses pulsed ...

WILEY2019

Analysis of hydrogen distribution and migration in fired passivating contacts (FPC)

Christophe Ballif, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Philippe Wyss, Franz-Josef Haug, Matthieu Despeisse, Mario Joe Lehmann, Andrea Ingenito

High temperature passivating contacts for c-Si based solar cells are intensively studied because of their potential in boosting solar cell efficiency while being compatible with industrial processes at high temperatures. In this work, the hydrogenation mec ...

2019

Amorphous gallium oxide grown by low-temperature PECVD

Christophe Ballif, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Stefaan De Wolf, Mathieu Gérard Boccard, Monica Morales Masis, Eiji Kobayashi, Daniel Vresilovic, Nathan Jacques Rodkey

2018

New Route for "Cold-Passivation" of Defects in Tin-Based Oxides

Christophe Ballif, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Monica Morales Masis, Yonghui Lee, Federica Landucci, Oscar Esteban Rucavado Leandro

2018

Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction

Christophe Ballif, Aïcha Hessler-Wyser, Sylvain Nicolay, Quentin Thomas Jeangros, Stefaan De Wolf, Matthieu Despeisse, Jérémie Werner, Florent Sahli, Loris Barraud, Raphaël Monnard, Johannes Peter Seif, Andrea Tomasi, Bertrand Yves Paul Paviet-Salomon, Björn Niesen, Matthias Wolfgang Bräuninger

Perovskite/silicon tandem solar cells are increasingly recognized as promi-sing candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely ...

2017

ITO/MoOx/a-Si:H(i) Hole-Selective Contacts for Silicon Heterojunction Solar Cells: Degradation Mechanisms and Cell Integration

Christophe Ballif, Aïcha Hessler-Wyser, Antoine Descoeudres, Sylvain Nicolay, Quentin Thomas Jeangros, Gabriel Christmann, Davide Sacchetto, Matthieu Despeisse, Loris Barraud, Jonas Geissbühler

Molybdenum oxide is an efficient hole collector for silicon solar cells. However, its optoelectronic properties deteriorate during cell manufacturing. To assess this issue, the optoelectronic properties and microstructure of molybdenum oxide-based hole con ...

2017

Direct Imaging of Dopant Distribution in Polycrystalline ZnO Films

Christophe Ballif, Aïcha Hessler-Wyser, Sylvain Nicolay, Arthur Brian Aebersold, Cécile Hébert, Duncan Thomas Lindsay Alexander, Stéphane Laurent Escrig, Monica Morales Masis, Martin Ledinsky

Two fundamental requirements of transparent conductive oxides are high conductivity and low optical absorptance, properties strongly dependent on the free-carrier concentration of the film. The free carrier concentration is usually-tuned by the addition of ...

Amer Chemical Soc2017

High performance amorphous Zn-Sn-O: impact of composition, microstructure, and thermal treatments in the optoelectronic properties

Christophe Ballif, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Monica Morales Masis, Federica Landucci, Oscar Esteban Rucavado Leandro

Zinc and tin oxides are both earth-abundant materials with demonstrated applicability as electrodes in several optoelectronic devices. The presence of grain boundaries in these polycrystalline films generally limits the electron mobility. By a combinatoria ...

Spie-Int Soc Optical Engineering2017

Enhancing the optoelectronic properties of amorphous zinc tin oxide by subgap defect passivation: A theoretical and experimental demonstration

Christophe Ballif, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Martial Duchamp, Jakub Holovsky, Monica Morales Masis, Federica Landucci, Oscar Esteban Rucavado Leandro

The link between sub-bandgap states and optoelectronic properties is investigated for amorphous zinc tin oxide (a-ZTO) thin films deposited by RF sputtering. a-ZTO samples were annealed up to 500 °C in oxidizing, neutral, and reducing atmospheres before ch ...

American Physical Society2017

Zinc blende-wurtzite polytypism in nanocrystalline ZnO films

Christophe Ballif, Aïcha Hessler-Wyser, Sylvain Nicolay, Arthur Brian Aebersold, Cécile Hébert, Duncan Thomas Lindsay Alexander, Lorenzo Fanni

ZnO is commonly observed and assumed to crystallize fully in a wurtzite structure. Indeed, While polytypism between a wurtzite and a zinc blende phase is often seen in some II-VI compounds, it has only rarely been observed in ZnO. Here, by means of automat ...

Elsevier2017

Metallization of Si heterojunction solar cells by nanosecond laser ablation and Ni-Cu plating

Christophe Ballif, Aïcha Hessler-Wyser, Ali Dabirian, Matthieu Despeisse, Jan-Willem Alexander Schüttauf, Monica Morales Masis, Bertrand Yves Paul Paviet-Salomon

A key step in industrialization of photovoltaics (PV) is the development of low-cost and large-area metallization processes to substitute the standard screen-printing process of silver paste. Thus Cu and Ni metallization processes enabled by laser patterni ...

Elsevier2017

Page 2 sur 5