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Christian Enz

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Publications associées (213)

Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures

Christian Enz, Edoardo Charbon, Farzan Jazaeri, Hung-Chi Han, Antonio D'Amico

This paper presents an in-depth DC characterization of a 22 nm FDSOI CMOS technology down to deep cryogenic temperature, i.e., 2.95 K. The impact of the back-gate voltage (V-back) on device performance, i.e., threshold voltage (V-T) and carrier transport, ...

PERGAMON-ELSEVIER SCIENCE LTD2022

Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology

Christian Enz, Edoardo Charbon, Farzan Jazaeri, Hung-Chi Han, Antonio D'Amico

This paper presents the RF characterization and modeling of a 22nm FDSOI technology down to 3.3K for quantum computing applications. The equivalent small-signal components are extracted analytically and automatically from the de-embedded two-port Y -parame ...

IEEE2022

Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

Christian Enz

This article investigates the device variability induced by the total ionizing dose (TID) effects in a commercial 16-nm bulk nFinFETs, using specially designed test structures and measurement procedures aimed at maximizing the matching between devices. DC ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Comparison of Two in Pixel Source Follower Schemes for Deep Subelectron Noise CMOS Image Sensors

Christian Enz, Minhao Yang, Assim Boukhayma, Antonino Caizzone, Daniel Mathias Bold, Andrea Kraxner

This paper compares two in-pixel source follower stage designs for low noise CMOS image sensors embedded both on a same 5 mm by 5 mm chip fabricated in a 180 nm CIS process. The presented chip embeds two pixel variants, one based on a body-effect-canceled ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Christian Enz

This article investigates the fin- and finger-number dependence of the total ionizing dose (TID) degradation in 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs designed with different numbers of fins and fingers are irradiated up to 500 Mrad(SiO ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Comprehensive Design-oriented FDSOI EKV Model

Christian Enz, Hung-Chi Han, Antonio D'Amico

The work presents the comprehensive design-oriented EKV model for FDSOI technologies, including the backgate effects and geometry dependence. Despite its simplicity, the model correctly captures not only the dependence of the threshold voltage versus the b ...

IEEE2022

Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing

Christian Enz, Edoardo Charbon, Farzan Jazaeri, Hung-Chi Han, Antonio D'Amico

This study presents the first in depth characterization of deep cryogenic electrical behavior of a commercial 16 nm CMOS FinFET technology. This technology is well suited for a broad range of applications, including quantum computing, quantum sensing, and ...

IEEE2021

A Generalized EKV Charge-based MOSFET Model Including Oxide and Interface Traps

Christian Enz, Farzan Jazaeri, Chunmin Zhang

This paper presents a generalized charge-based EKV MOSFET model that includes the effects of trapped charges in the bulk oxide and at the silicon/oxide interface. It is shown that in the presence of oxide- and interface-trapped charges, the mobile charge d ...

2021

In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation

Christian Enz, Edoardo Charbon, Farzan Jazaeri, Hung-Chi Han, Antonio D'Amico

In this paper, the influence of temperature and back-gate bias is experimentally investigated on 22 nm FDSOI CMOS process. Cryogenic DC characterization was carried out under various back-gate voltages, V back , from 2.95 K back to 300 K. An abrupt drop-of ...

IEEE2021

Very Selective Detection of Low Physiopathological Glucose Levels by Spontaneous Raman Spectroscopy with Univariate Data Analysis

Christian Enz, Sandro Carrara, Assim Boukhayma, Antonino Caizzone, Ata Jedari Golparvar

After decades of research on non-invasive glucose monitoring, invasive devices based on finger blood sampling are still the predominant reference for diabetic patients for accurately measuring blood glucose levels. Meanwhile, research continues improving p ...

2021

Power-Optimized Digitally Controlled Oscillator in 28-nm CMOS for Low-Power FMCW Radars

Christian Enz, Francesco Chicco, Sammy Cerida Rengifo, Franz Xaver Pengg

This work presents the design of a 24-GHz digitally controlled oscillator (DCO) in an advanced 28-nm bulk CMOS technology for short-range frequency-modulated continuous-wave radar system-on-chip for mobile and Internet-of-Things devices. The power minimiza ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

An Optimized Low-Power Band-Tuning TX for Short-Range FMCW Radar in 22-nm FDSOI CMOS

Christian Enz, Francesco Chicco, Sammy Cerida Rengifo

The paper presents a low-power transmitter (TX) as a part of a fully integrated 57-66 GHz FMCW radar system. The TX path includes a BPSK modulator and it is optimized for short-range operation with 0 dBm output power. A band-tuning technique is used for co ...

IEEE2021

Generalized Boltzmann relations in semiconductors including band tails

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

Boltzmann relations are widely used in semiconductor physics to express the charge-carrier densities as a function of the Fermi level and temperature. However, these simple exponential relations only apply to sharp band edges of the conduction and valence ...

AMER INST PHYSICS2021

Optimized Detection of Hypoglycemic Glucose Ranges in Human Serum by Raman Spectroscopy with 532 nm Laser Excitation

Christian Enz, Sandro Carrara, Assim Boukhayma, Ata Jedari Golparvar

Raman scattering-based biomedical detection has usually been proposed with near-infrared laser sources. However, a low-cost CMOS imager's quantum efficiency is optimum around green wavelength, and their sensitivity substantially decreases in near-infrared ...

SCITEPRESS2021

Nanowatt Acoustic Inference Sensing Exploiting Nonlinear Analog Feature Extraction

Christian Enz, Minhao Yang, Jun Zhang

Ultralow-power sensing with inference functionality embedded in sensor nodes is essential for enabling the emerging pervasive intelligence. For acoustic inference sensing, the feature extraction can take advantage of power-efficient analog circuits. Howeve ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

A 60 GHz QDCO with 11 GHz Seamless Tuning for Low-Power FMCW Radars in 22-nm FDSOI

Christian Enz, Francesco Chicco, Sammy Cerida Rengifo

This paper presents the design of a 60GHz Quadrature Digitally-Controlled Oscillator for a low-power Frequency-Modulated Continuous Wave radar System-on-Chip. The accurate detection of vital signs requires 1 and Q demodulation of the received signal. The q ...

IEEE2021

TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Christian Enz

This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs with several channel lengths are irradiated up to 1 Grad(SiO2) and then annealed for 24 h at 100 degrees C. Irradia ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Design and Optimization of Low Power and Low Light Sensor

Christian Enz, Assim Boukhayma, Antonino Caizzone, Raffaele Capoccia

The current trend towards embedding more and more light sensors in portable and wearable devices is calling for higher integration and reuse of the sensor interface electronics. In many applications, the light needs to be generated locally, which becomes t ...

IEEE2020

Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2 K. Interface traps close to the band edge modify the saturating temperature behavior of the threshold voltage observed in cryogenic measurements. Dopant freezeout, ...

2020

Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical temperature, the derived limit saturates to a value that is independent of tempe ...

Institute of Electrical and Electronics Engineers2020

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