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Alexei Sirbu

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Publications associées (51)

Numerical Analysis of Mode Discrimination by Intracavity Patterning in Long-Wavelength Wafer-Fused Vertical-Cavity Surface-Emitting Lasers

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman, Nicolas Volet

This paper presents an extensive numerical analysis of 1.3-mu m wavelength wafer-fused vertical-cavity surface-emitting lasers (VCSELs) incorporating intracavity patterning. Using a 3-D, self-consistent model of the physical phenomena in VCSELs, supported ...

Institute of Electrical and Electronics Engineers2014

Wafer-fused VECSELs emitting in the 1310 nm waveband

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman, Nicolas Volet, Kamil Pawel Pierscinski

Optically pumped wafer fused 1310 nm VECSELs have the advantage of high output power and wavelength agility. Gain mirrors in these lasers are formed by direct bonding of InAlGaAs/InP active cavities to Al(Ga) As/GaAs DBRs. We present for the first time Wat ...

Spie-Int Soc Optical Engineering2014

Vertical cavity surface emitting devices incorporating wafer fused reflectors

Alexei Sirbu, Alexandru Mereuta, Andrei Caliman

The invention refers to a method of manufacturing an optoelectronic device and in particular a method of manufacturing a vertical cavity surface emitting device incorporating wafer fused reflectors. ...

Ecole Polytechnique Federale de Lausanne2013

Recent progress in wafer-fused VECSELs emitting in the 1310nm and 1550nm bands

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman, Nicolas Volet, Kamil Pawel Pierscinski

Recent developments of wafer-fused long-wavelength VECSELs resulted in reaching record high CW output power of 6.6 W at 1300 nm and a coherence length longer than 5 km in fiber and 1 Watt of output power in single frequency regime at 1550 nm. First wafer-f ...

SPIE, Vol. 8606, pp. , 20132013

156 µm 1 watt single frequency semiconductor disk laser

Elyahou Kapon, Alexei Sirbu, Alexandru Mereuta

A single frequency wafer-fused semiconductor disk laser at 1.56 mu m with 1 watt of output power and a coherence length over 5 km in fiber is demonstrated. The result represents the highest output power reported for a narrow-line semiconductor disk laser o ...

Optical Society of America2013

Optical Injection Locking of Polarization Modes in VCSELs Emitting at 1.3 μm Wavelength

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Elodie Lamothe, Christopher Michael Long

2013

Reliability of 1310 nm Wafer Fused VCSELs

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Zlatko Mickovic

Wafer fusion vertical cavity surface emitting laser (VCSEL) technology has produced devices that successfully passed all mechanical and electrical Telcordia qualification tests. Accelerated lifetime tests result in times to 1% failure at 70 degrees C of 18 ...

Ieee-Inst Electrical Electronics Engineers Inc2013

14XX nm-wavelength electrically-pumped VECSELs fabricated by wafer fusion

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman, Kamil Pawel Pierscinski

We report on the design, fabrication and characterization of electrically pumped vertical external cavity surface emitting lasers (EP-VECSELs) emitting at 1470 nm. We demonstrate 6.2 mW of CW output power, which represents the highest power value reported ...

Optical Society of America2013

Ultra-Low Power VCSELs for optical network

Elyahou Kapon, Alexei Sirbu

2013

Transverse mode discrimination in long-wavelength wafer-fused vertical-cavity surface-emitting lasers by intra-cavity patterning

Benjamin Dwir, Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman, Nicolas Volet, Zlatko Mickovic, Pascal Gallo, Lukas Mutter

Transverse mode discrimination is demonstrated in long-wavelength wafer-fused vertical-cavity surface-emitting lasers using ring-shaped air gap patterns at the fused interface between the cavity and the top distributed Bragg reflector. A significant number ...

Optical Society of America2013

Wafer-fused 1300 and 1550nm-waveband vertical external cavity lasers

Elyahou Kapon, Alexei Sirbu

2013

Low power consumption 1310 nm VCSELs for 4x10 Gbps CWDM links

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Dalila Ellafi

IEEE2013

Optical injection locking of polarization modes and spatial modes in single-aperture VCSELs and VCSEL arrays emitting at 1.3 mu m

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Elodie Lamothe, Christopher Michael Long

We report the injection locking of specific spatial modes and polarization modes of 1.3 mu m wavelength vertical surface emitting lasers (VCSELs) in single-aperture devices and phase-coupled arrays. The optical injection is realized using a master laser (M ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2012

Polarization mode structure in long-wavelength wafer-fused vertical-cavity surface-emitting lasers

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Nicolas Volet

Applications of long-wavelength (lambda > 1 mu m) vertical-cavity surface-emitting lasers (VCSELs) generally require close control over wavelength and polarization of the emitted light. In most cases, single mode and polarization stable lasing is desired. ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2012

1310 nm wafer fused VCSELs - a new generation of uncooled 10 Gbps telecom lasers

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Zlatko Mickovic, Dalila Ellafi

1310 nm-band wafer-fused VCSELs demonstrate record low 10 Gbps modulation current of 6 mA at temperatures from RT to 70 °C. Reliability studies demonstrate the suitability of this technology in commercial photonic systems. © 2012 IEEE. ...

2012

Recent Progress in Wafer-Fused VCSELs Emitting in the 1550-nm Band

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman

Record-high fundamental mode output power of 1.5 mW at 100 degrees C is achieved with InAlGaAs-InP/AlGaAs-GaAs 1550 nm wavelength vertical cavity surface emitting lasers (VCSELs) produced by a modified wafer fusion technique. A broad wavelength setting on ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2011

Wafer-fused heterostructures : application to vertical cavity surface-emitting lasers emitting in the 1310 nm band

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman

Currently, wafer-fusion technology represents an effective technique for enhancing the performance of long-wavelength vertical cavity surface-emitting lasers (VCSELs) based on classical double heterostructures with multi-quantum well active regions. Using ...

Institute of Physics2011

Polarisation stabilisation of vertical cavity surface emitting lasers by minimally invasive focused electron beam triggered chemistry

Elyahou Kapon, Alexei Sirbu, Ivo Utke, Vladimir Iakovlev, Martin Jenke, Alexandru Mereuta, Andrei Caliman

2011

High-power optically-pumped VECSELs emitting in the 1310-nm and 1550-nm wavebands

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman, Qing Zhu, Nicolas Volet

1300-nm, 1550-nm and 1480-nm wavelength, optically-pumped VECSELs based on wafer-fused InAlGaAs/InPAlGaAs/GaAs gain mirrors with intra-cavity diamond heat-spreaders demonstrate very low thermal impedance of 4 K/W. Maximum CW output of devices with5 groups ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2011

Wafer-Fused 1310 nm and 1550 nm Mode-Locked Semiconductor Disk Lasers

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman

We report on fabrication and performance of wafer fused, high power, passively mode-locked semiconductor disc lasers operating in 1310 nm and 1550 nm bands. These devices comprise gain mirrors based on InAlGaAs/InP multi quantum well active regions fused t ...

Ieee2011

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