Publications de Adil Koukab | EPFL Graph Search

Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications

The 28 nm CMOS technology was selected as a promising candidate to upgrade electronics of particle detectors at CERN. Despite the robustness of this node to ultra-high levels of total ionizing dose has been proven, the resilience to 10161MeVneq/cm2 fluence ...

2024

High-rate, high-resolution single photon X-ray imaging: Medipix4, a large 4-side buttable pixel readout chip with high granularity and spectroscopic capabilities

Jean-Michel Sallese, Adil Koukab, Viros Sriskaran

The Medipix4 chip is the latest member in the Medipix/Timepix family of hybrid pixel detector chips aimed at high -rate spectroscopic X-ray imaging using high -Z materials. It can be tiled on all 4 sides making it ideal for constructing large -area detecto ...

Iop Publishing Ltd2024

Characteristics and ultra-high total ionizing dose response of 22nm fully depleted silicon-on-insulator

Jean-Michel Sallese, Adil Koukab, Gennaro Termo

The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon -On -Insulator (FDSOI) technology exposed to ultra -high total ionizing dose (TID) was investigated. Custom structures including n- and p -channel devices with different sizes and ...

Iop Publishing Ltd2024

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

Jean-Michel Sallese, Adil Koukab, Stefano Michelis, Gennaro Termo

The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over ti ...

IOP Publishing Ltd2023

Neutron- and Proton-Induced Degradation of MOS Transistors in 28 nm CMOS Technology (September 2023)

Jean-Michel Sallese, Adil Koukab

The 28 nm CMOS technology was selected as a promising candidate for upgrade of the electronics of particle detectors at CERN. Despite the robustness of this node to ultrahigh levels of total ionizing dose has been proven, the capability to withstand 1016 1 ...

Institute of Electrical and Electronics Engineers Inc.2023

The Timepix4 analog front-end design: Lessons learnt on fundamental limits to noise and time resolution in highly segmented hybrid pixel detectors

Jean-Michel Sallese, Adil Koukab

This manuscript describes the optimization of the front-end readout electronics for high granularity hybrid pixel detectors. The theoretical study aims at minimizing the noise and jitter. The model presented here is validated with both circuit post layout ...

2023

Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same

Jean-Michel Sallese, Adil Koukab

A time-resolved multi-gate ion sensitive field effect transducer, including a silicon layer, a P-doped region in the silicon layer and a first electrode in electric connection with the P doped region, a N-doped region in the silicon layer and a second elec ...

2023

New architecture for the analog front-end of Medipix4

Jean-Michel Sallese, Adil Koukab, Viros Sriskaran

The Medipix4 chip is the latest member of the family of Medipix pixel detector readout chips aimed at high rate spectroscopic X-ray imaging. Unlike its predecessors, it will be possible to tile the chip on all 4 sides permitting seamless large area coverag ...

ELSEVIER2020

A Dual-Edge Pulsewidth Modulator for Fast Dynamic Response DC-DC Converters

Maher Kayal, Federico Faccio, Adil Koukab, Stefano Michelis, Giacomo Ripamonti

Voltage regulator modules are dc-dc converters that power modern microprocessors. They must exhibit a fast dynamic response, in order to achieve satisfactory regulation performance in spite of the rapid load current variations. The pulsewidth modulator is ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

A Reliability and Efficiency Optimization System for Hard-Switching DC/DC Converters

Maher Kayal, Federico Faccio, Adil Koukab, Stefano Michelis, Giacomo Ripamonti

The Large Hadron Collider experiments at CERN will use power distribution schemes relying on integrated buck DC/DC converters. Due to the radiation-hardness requirements, the devices used for the development of such converters will have a voltage rating wh ...

IEEE2018

Computing the Impact of White and Flicker Noise in Continuous-Time Integrator-Based ADCs

Maher Kayal, Adil Koukab, Paul Stanislas Gosselin

From first-order incremental Sigma Delta converters to controlled-oscillator-based converters, many ADC architectures are based on the continuous-time integration of the input signal. However, the accuracy of such converters cannot be properly estimated wi ...

Ieee2016

Toward direct light-to-digital conversion using a pulse-driven hybrid MOS-PN photodetector

Maher Kayal, Adil Koukab, Denis Sallin

In this Letter, a direct light-to-digital converter based on an MOS-PN photodetector driven by pulsed voltage is presented. The objective is to avoid any analog-to-digital or time-to-digital conversion and, thereby, to pave the way for a new generation of ...

Optical Society of America2015

Silicon-on-Insulator Technology for Bioluminescence Imaging and Application to a Switching Photodetector

Maher Kayal, Adil Koukab, Denis Sallin, Nisrina Abdo

This paper analyzes some advantages of Silicon-on-Insulator (SOI) based photodetectors for bioluminescence imaging. It shows that SOI based sensors not only solve the bulk carriers problem, it can also act as a very selective spectral filter by acting as a ...

Ieee2015

A dynamic operation of a PIN photodiode

Maher Kayal, Serguei Okhonin, Alexander Tagantsev, Marc Pastre, Adil Koukab, Denis Sallin, Maxim Gureev, Alexander Kvasov

Traditionally, photodiodes operate at static reverse bias, and incident light intensity is obtained from the relatively week photocurrent. In this paper, we introduce a different concept of photodiode function: the photodiode is used in a dynamic regime wh ...

American Institute of Physics2015

Hybrid MOS-PN photodiode with positive feedback for pulse-modulation imaging

Maher Kayal, Adil Koukab, Denis Sallin

A new type of CMOS compatible photodetector, exhibiting intrinsic light-to-time conversion, is proposed. Its main objective is to start the time-to-digital conversion directly at its output, thereby avoiding the cumbersome analog processing. The operation ...

Optical Society of America2014

MOS-PN Hybrid Device With Minimum Dark Current for Sensitive Digital Photodetection

Maher Kayal, Adil Koukab, Denis Sallin

This letter presents a CMOS-compatible photodetector displaying direct light-to-time conversion and intrinsic charge integration with a very low dark current. This device is particularly adapted for applications requiring high sensitivity such as biolumine ...

Institute of Electrical and Electronics Engineers2014

A 10-W modified LINC Power amplifier with a reduced-size Chireix Power Combiner

Adil Koukab

This paper reports a miniaturization technique of non-isolated power combiners and its application for a compact outphasing transmitter. The technique is used to build an LDMOS Z-LINC system. The maximum output power and PAE measured at 900 MHz are 9.3 W a ...

Ieee2014

On performance scaling and speed of junctionless transistors

Jean-Michel Sallese, Adil Koukab

A prospective study of the junctionless transistors (JLTs) scaling performances based both on TCAD and analytical evaluations of the intrinsic delay after considering on/off voltage constraints is proposed. The tradeoffs between speed and switching power p ...

Pergamon-Elsevier Science Ltd2013

Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime

Jean-Michel Sallese, Adil Koukab, Lucian Barbut, Farzan Jazaeri

In this paper, we propose an approximate solution to solve the two dimensional potential distribution in ultra-thin body junctionless double gate MOSFET (JL DG MOSFET) operating in the subthreshold regime. Basically, we solved the 2D-Poisson equation along ...

Elsevier2013

A Zero Capacitive LINC Architecture for Efficient Broadband Transmitters

Adil Koukab

A new approach for linear amplification with nonlinear components (Z-LINC) that provides a zero capacitive load to their power amplifiers is proposed. The zero capacitive loading over the whole power back-off range enables to overcome the efficiency deteri ...

Ieee2013