Publications de Angelo Bongiorno

The zCOSMOS redshift survey: evolution of the light in bulges and discs since z similar to 0.8

Angelo Bongiorno, Jean-Paul Richard Kneib, Richard Massey, Yatao Peng

We studied the chronology of galactic bulge and disc formation by analysing the relative contributions of these components to the B-band rest-frame luminosity density at different epochs. We present the first estimate of the evolution of the fraction of re ...

EDP Sciences2014

Ion scattering simulations of the Si(100)-SiO2 interface

Alfredo Pasquarello, Angelo Bongiorno

We carry out ion scattering simulations to investigate the nature of the transition region at the Si(100)-SiO2 interface. Ion scattering experiments performed in the channeling geometry provide us with a genuine interfacial property, the excess Si yield, r ...

2006

Atomic-scale modelling of kinetic processes occurring during silicon oxidation

Alfredo Pasquarello, Angelo Bongiorno

We model the fundamental kinetic processes occurring during silicon oxidation at the atomic scale. We first focus on the diffusion of the, neutral O-2 molecule through the oxide layer. By combining ab initio and classical simulations, we derive a statistic ...

2005

Atomic-scale modelling of the Si(100)-SiO2 interface

Alfredo Pasquarello, Angelo Bongiorno

We discuss the structural, electronic and dielectric properties of a model structure of the Si(100)-SiO2 interface that accounts for the amorphous nature of the oxide. After showing that the structural properties of this model are consistent with a variety ...

2005

O-2 oxidation reaction at the Si(100)-SiO2 interface: A first-principles investigation

Alfredo Pasquarello, Angelo Bongiorno

We investigated the oxidation reaction of the O-2 molecule at the Si(100)-SiO2 interface by using a constrained ab initio molecular dynamics approach. To represent the Si(100)-SiO2 interface, we adopted several model interfaces whose structural properties ...

Kluwer Academic Publishers, Springer2005

Atomistic models of the Si(100)-SiO2 interface: structural, electronic and dielectric properties

Alfredo Pasquarello, Angelo Bongiorno

We review the structural, electronic and dielectric properties of atomistic models of the Si(100)-SiO2 interface, which have been purposely designed in order to match a large variety of atomic-scale experimental data. After describing the generation proced ...

2005

Equivalent oxide thickness of a thin oxide interlayer in gate insulator stacks on silicon

Alfredo Pasquarello, Angelo Bongiorno

We investigate the equivalent oxide thickness of a thin oxide interlayer in gate insulator stacks on silicon. Through the use of a first-principles approach, we map the profile of the local permittivity across two interface models showing different suboxid ...

AIP American Institute of Physics2005

Comment on "Structural analysis of the SiO2/Si(100) interface by means of photoelectron diffraction"

Alfredo Pasquarello, Angelo Bongiorno

2005