Publications de Grigore Suruceanu

Single crystal diamond gain mirrors for high performance vertical external cavity surface emitting lasers

Niels Quack, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Pascal Gallo, Gergely Huszka, Mehdi Naamoun

We report on the design, fabrication and optical performance of gain mirrors in single crystal diamond substrates for vertical external cavity surface emitting lasers (VECSELs). VECSELs have gained attention recently due to their potential for high emissio ...

2020

High-Power 760 nm VECSEL Based on Quantum Dot Gain Mirror

Elyahou Kapon, Grigore Suruceanu, Nicolas Chevalier, Alexandru Mereuta, Andrei Caliman

We report high-power second-harmonic generation of 760 nm laser light from optically-pumped vertical-external-cavity surface-emitting laser based on quantum dot active medium. The laser generates 1.2 W in fundamental transverse mode with fixed linear polar ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

InAs/InP quantum dot VECSEL emitting at 1.5 mu m

Elyahou Kapon, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman

A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 mu m is reported. The active region employs 20 layers of high-density Stranski-Krastanow InAs quantum dots on an InP substrate. The QD density and emission w ...

AMER INST PHYSICS2019

Flip-Chip Wafer-Fused OP-VECSELs Emitting 3.65 W at the 1.55-mu m Waveband

Elyahou Kapon, Alok Rudra, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Pascal Gallo

Optically pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-chip gain mirrors emitting at the 1.55 mu m wavelength range are reported. The gain mirrors employ wafer-fused InAlGaAs/InP quantum well heterostructures and GaAs/AlA ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Increasing single mode power of 13-μm VCSELs by output coupling optimization

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Zlatko Mickovic

We report on the single mode emission power enhancement of 1.3-mu m VCSELs by adjusting the reflectivity of the top GaAs-based DBR for output coupling optimization using selective removal of Bragg reflector layers. Devices with record single mode power of ...

Optical Society of America2015

Fabrication and performance of 1.3-mu m 10-Gb/s CWDM wafer-fused VCSELs grown by MOVPE

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Zlatko Mickovic

Recent progress in the fabrication and performance of 1.3-mu m 10-Gb/s, low power consumption wafer-fused VCSELs grown by MOVPE under nitrogen atmosphere are presented and discussed. By optimization of the growth conditions and implementation of a cavity a ...

Elsevier Science Bv2015

Effect of Cavity Lifetime Variation on the Static and Dynamic Properties of 1.3-μm Wafer-Fused VCSELs

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Zlatko Mickovic, Dalila Ellafi

We investigate experimentally the impact of photon cavity lifetime variations on the static and dynamic performance of high-speed 1.3-mu m wavelength wafer-fused vertical-cavity surface-emitting lasers (VCSELs). The photon lifetime is modified by decreasin ...

Ieee-Inst Electrical Electronics Engineers Inc2015

Wavelength control in fabrication of wafer fused VCSELs emitting in the 1310 nm waveband

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Zlatko Mickovic

Emission wavelength setting of 1310nm-waveband VCSELs designed for coarse wavelength division multiplexing (CWDM) 4x10 Gbps fiber-optics transmission can be controlled thanks to the wafer fusion fabrication approach. This approach allows performing the cav ...

Spie-Int Soc Optical Engineering2014

Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman

1310 nm Wavelength VCSELs produce single mode emission in excess of 1 mW in the temperature range of 20-70 degrees C with a very low relative intensity noise of -148 dB/Hz. These devices have a broad tuning range of similar to 50 cm(-1) with variable tempe ...

Elsevier2014

Control of cavity lifetime of 1.5 mu m wafer-fused VCSELs by digital mirror trimming

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Zlatko Mickovic, Dalila Ellafi

Digital chemical etching is used to trim the output mirror thickness of wafer-fused VCSELs emitting at a wavelength near 1.5 mu m. The fine control of the photon cavity lifetime thus achieved is employed to extract important device parameters and optimize ...

Optical Soc Amer2014

Optical Injection Locking of Polarization Modes in VCSELs Emitting at 1.3 μm Wavelength

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Elodie Lamothe, Christopher Michael Long

2013

Reliability of 1310 nm Wafer Fused VCSELs

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Zlatko Mickovic

Wafer fusion vertical cavity surface emitting laser (VCSEL) technology has produced devices that successfully passed all mechanical and electrical Telcordia qualification tests. Accelerated lifetime tests result in times to 1% failure at 70 degrees C of 18 ...

Ieee-Inst Electrical Electronics Engineers Inc2013

Low power consumption 1310 nm VCSELs for 4x10 Gbps CWDM links

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Dalila Ellafi

IEEE2013

Optical injection locking of polarization modes and spatial modes in single-aperture VCSELs and VCSEL arrays emitting at 1.3 mu m

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Elodie Lamothe, Christopher Michael Long

We report the injection locking of specific spatial modes and polarization modes of 1.3 mu m wavelength vertical surface emitting lasers (VCSELs) in single-aperture devices and phase-coupled arrays. The optical injection is realized using a master laser (M ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2012

Polarization mode structure in long-wavelength wafer-fused vertical-cavity surface-emitting lasers

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Nicolas Volet

Applications of long-wavelength (lambda > 1 mu m) vertical-cavity surface-emitting lasers (VCSELs) generally require close control over wavelength and polarization of the emitted light. In most cases, single mode and polarization stable lasing is desired. ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2012

1310 nm wafer fused VCSELs - a new generation of uncooled 10 Gbps telecom lasers

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Zlatko Mickovic, Dalila Ellafi

1310 nm-band wafer-fused VCSELs demonstrate record low 10 Gbps modulation current of 6 mA at temperatures from RT to 70 °C. Reliability studies demonstrate the suitability of this technology in commercial photonic systems. © 2012 IEEE. ...

2012

Recent Progress in Wafer-Fused VCSELs Emitting in the 1550-nm Band

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman

Record-high fundamental mode output power of 1.5 mW at 100 degrees C is achieved with InAlGaAs-InP/AlGaAs-GaAs 1550 nm wavelength vertical cavity surface emitting lasers (VCSELs) produced by a modified wafer fusion technique. A broad wavelength setting on ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2011

Wafer-fused heterostructures : application to vertical cavity surface-emitting lasers emitting in the 1310 nm band

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman

Currently, wafer-fusion technology represents an effective technique for enhancing the performance of long-wavelength vertical cavity surface-emitting lasers (VCSELs) based on classical double heterostructures with multi-quantum well active regions. Using ...

Institute of Physics2011

High Fundamental Mode Power, High Speed InAlGaAs/AlGaAs 1310 and 1550-nm Wafer-Fused VCSELs

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman

InAlGaAs/AlGaAs-based wafer-fused long-wavelength VCSELs with tunnel junction injection emitting in the 1310 nm and 1550 nm bands show high single-mode output and high speed modulation capabilities of 10 Gbps. Fundamental emission close to 6 mW at room tem ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Cavity Mode—Gain Peak Tradeoff for 1320-nm Wafer-Fused VCSELs With 3-mW Single-Mode Emission Power and 10-Gb/s Modulation Speed Up to 70° C''

Elyahou Kapon, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman

2007