Publications de Andrei Caliman

Electrically pumped shot-noise limited class A VECSEL at telecom wavelength

Elyahou Kapon, Alexandru Mereuta, Andrei Caliman

Class A shot-noise limited operation is achieved in an electrically pumped vertical external cavity surface emitting laser (VECSEL), opening the way for integration of such peculiar noiseless laser oscillation in applications where low power consumption an ...

2021

Single crystal diamond gain mirrors for high performance vertical external cavity surface emitting lasers

Niels Quack, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Pascal Gallo, Gergely Huszka, Mehdi Naamoun

We report on the design, fabrication and optical performance of gain mirrors in single crystal diamond substrates for vertical external cavity surface emitting lasers (VECSELs). VECSELs have gained attention recently due to their potential for high emissio ...

2020

High-Power 760 nm VECSEL Based on Quantum Dot Gain Mirror

Elyahou Kapon, Grigore Suruceanu, Nicolas Chevalier, Alexandru Mereuta, Andrei Caliman

We report high-power second-harmonic generation of 760 nm laser light from optically-pumped vertical-external-cavity surface-emitting laser based on quantum dot active medium. The laser generates 1.2 W in fundamental transverse mode with fixed linear polar ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

InAs/InP quantum dot VECSEL emitting at 1.5 mu m

Elyahou Kapon, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman

A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 mu m is reported. The active region employs 20 layers of high-density Stranski-Krastanow InAs quantum dots on an InP substrate. The QD density and emission w ...

AMER INST PHYSICS2019

Flip-Chip Wafer-Fused OP-VECSELs Emitting 3.65 W at the 1.55-mu m Waveband

Elyahou Kapon, Alok Rudra, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Pascal Gallo

Optically pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-chip gain mirrors emitting at the 1.55 mu m wavelength range are reported. The gain mirrors employ wafer-fused InAlGaAs/InP quantum well heterostructures and GaAs/AlA ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Mode Coupling Measurement in Dual-Frequency Quantum Well-based VECSEL

Elyahou Kapon, Alexandru Mereuta, Andrei Caliman

We experimentally investigate the Lamb coupling constant C in InGaAlAs Quantum Wells active medium. An Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser emitting at 1.54 mu m is designed to sustain the oscillation of two orthogonally polariz ...

IEEE2019

Direct measurement of the spectral dependence of Lamb coupling constant in a dual frequency quantum well-based VECSEL

Elyahou Kapon, Alexandru Mereuta, Andrei Caliman, Salvatore Pes

Spectral dependence of Lamb coupling constant C is experimentally investigated in an InGaAlAs Quantum Wells active medium. An Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser is designed to sustain the oscillation of two orthogonally polari ...

2019

1.55-mu m wavelength wafer-fused OP-VECSELs in flip-chip configuration

Elyahou Kapon, Alexandru Mereuta, Andrei Caliman, Pascal Gallo

Optically-pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-chip gain mirrors emitting at the 1.55-mu m wavelength range are reported. The gain mirrors employ wafer-fused InAlGaAs/InP quantum well heterostructures and GaAs/AlA ...

SPIE-INT SOC OPTICAL ENGINEERING2019

25 Gbps direct modulation and 10 km data transmission with 1310 nm waveband wafer fused VCSELs

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman

Direct modulation at > 25 Gbps is achieved with 1310 nm wavelength wafer fused VCSELs by adjusting the strain in the quantum well active region and the cavity photon lifetime. 25 + Gbps large signal modulation with 10(-12) BER at 1310 nm across 10 km of st ...

Optical Soc Amer2016

>25 Gbps direct modulation and data transmission with 1310 nm waveband wafer fused VCSELs

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman

25 Gb/s transmission over 10 km of standard single mode fiber is demonstrated for 1300 nm wafer fused InP/GaAs VCSELs with increased strain in quantum wells and higher output coupling from the cavity. ...

Ieee2016

Polarization mode control of long-wavelength VCSELs by intracavity patterning

Benjamin Dwir, Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman, Zlatko Mickovic, Christopher Michael Long

Polarization mode control is enhanced in wafer-fused verticalcavity surface-emitting lasers emitting at 1310 nm wavelength by etching two symmetrically arranged arcs above the gain structure within the laser cavity. The intracavity patterning introduces bi ...

Optical Soc Amer2016

85 W VECSEL output at 1270 nm with conversion efficiency of 59 %

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman

We report on 1270 nm vertical-external-cavity surface-emitting lasers (VECSELs) with up to 59% conversion efficiency and maximum output power of 8.5 W (pump limited), at 5 degrees C heat sink temperature. These VECSELs comprised wafer-fused gain mirrors in ...

Optical Society of America2015

Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman, Nicolas Volet

Over the last years we have continuously improved the performance of 1300 nm band VECSELs with wafer fused gain mirrors in the intra-cavity diamond and the flip-chip heat dissipation configurations. In this work we present recent results for gain mirrors t ...

Spie-Int Soc Optical Engineering2015

Increasing single mode power of 13-μm VCSELs by output coupling optimization

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Zlatko Mickovic

We report on the single mode emission power enhancement of 1.3-mu m VCSELs by adjusting the reflectivity of the top GaAs-based DBR for output coupling optimization using selective removal of Bragg reflector layers. Devices with record single mode power of ...

Optical Society of America2015

Optical Injection and Lasing Dynamics in Long-Wavelength VCSELs With Intracavity Patterning

Benjamin Dwir, Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman, Zlatko Mickovic, Christopher Michael Long, Dalila Ellafi

We present the static and optical injection response of wafer-fused long-wavelength VCSELs with and without intracavity patterning. It is found that the extra optical cavity patterning increases the gain anisotropy between orthogonal polarization modes, in ...

Ieee-Inst Electrical Electronics Engineers Inc2015

Fabrication and performance of 1.3-mu m 10-Gb/s CWDM wafer-fused VCSELs grown by MOVPE

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Zlatko Mickovic

Recent progress in the fabrication and performance of 1.3-mu m 10-Gb/s, low power consumption wafer-fused VCSELs grown by MOVPE under nitrogen atmosphere are presented and discussed. By optimization of the growth conditions and implementation of a cavity a ...

Elsevier Science Bv2015

Effect of Cavity Lifetime Variation on the Static and Dynamic Properties of 1.3-μm Wafer-Fused VCSELs

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Zlatko Mickovic, Dalila Ellafi

We investigate experimentally the impact of photon cavity lifetime variations on the static and dynamic performance of high-speed 1.3-mu m wavelength wafer-fused vertical-cavity surface-emitting lasers (VCSELs). The photon lifetime is modified by decreasin ...

Ieee-Inst Electrical Electronics Engineers Inc2015

Optical injection locking of transverse modes in 1.3-mu m wavelength coupled-VCSEL arrays

Benjamin Dwir, Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman, Lukas Mutter, Christopher Michael Long

Optical injection locking of 1.3-mu m phase-locked VCSEL arrays defined by patterned tunnel junctions and wafer fusion is investigated experimentally and theoretically. The impact of the overlap between the master laser injection beam and the injected mode ...

Optical Society of America2014

High performance wafer-fused semiconductor disk lasers emitting in the 1300 nm waveband

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman, Nicolas Volet

We report for the first time on the performance of 1300 nm waveband semiconductor disc lasers (SDLs) with wafer fused gain mirrors that implement intracavity diamond and flip-chip heat dissipation schemes based on the same gain material. With a new type of ...

Optical Society of America2014

Wavelength control in fabrication of wafer fused VCSELs emitting in the 1310 nm waveband

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Zlatko Mickovic

Emission wavelength setting of 1310nm-waveband VCSELs designed for coarse wavelength division multiplexing (CWDM) 4x10 Gbps fiber-optics transmission can be controlled thanks to the wafer fusion fabrication approach. This approach allows performing the cav ...

Spie-Int Soc Optical Engineering2014