Publications de Nicoleta-Diana Ciressan

Nanogap MEM resonators on SOI

Today's consumer electronics based on a large variety of time-keeping and frequency reference applications is based on quartz-crystal oscillators, because of their excellent performances in terms of quality factor, thermal and frequency stability. However, ...

EPFL2009

Nano-gap high quality factor thin film SOI MEM resonators

Mihai Adrian Ionescu, Daniel Grogg, Marco Mazza, Nicoleta-Diana Ciressan, Hüseyin Cumhur Tekin, Dimitrios Tsamados

A 1.25 m thin SOI micro-electro-mechanical (MEM) resonator with a quality factor of 100’000 at 24.6 MHz is demonstrated. A nanogap fabrication process allows the fabrication of < 200 nm gaps, allowing for low polarization voltages. A motional resistance of ...

2008

Focussed ion beam based fabrication of micro-electro-mechanical resonators

Mihai Adrian Ionescu, Daniel Grogg, Nicoleta-Diana Ciressan

A simple and fast process to fabricate micro-electro-mechanical (MEM) resonators with deep sub-micron transduction gaps in thin SOI is presented. The proposed process is realized on both 350 nm and 1.5 μm thin silicon-on-insulator (SOI) substrates, evaluat ...

Springer-Verlag2008

Nano-gap micro-electro-mechanical bulk lateral resonators with high quality factors and low motional resistances on thin silicon-on-insulator

Mihai Adrian Ionescu, Daniel Grogg, Marco Mazza, Nicoleta-Diana Ciressan

The design, fabrication and experimental investigation of 22-25 MHz fragmented-membrane MEM bulk lateral resonators (BLR) with 100 nm air-gaps on thin (1 and 6 [mu]m) silicon-on-insulator (SOI) are reported. Quality factors as high as 120,000 and motional ...

2008

Laterally vibrating-body double gate MOSFET with improved signal detection

Mihai Adrian Ionescu, Daniel Grogg, Marco Mazza, Nicoleta-Diana Ciressan, Hüseyin Cumhur Tekin, Dimitrios Tsamados

Laterally vibrating-body double-gate MOSFET that shows a +30 dB signal increase compared to an identical resonator operating with pure capacitive detection is reported. The double-gate MOSFET is fabricated on SOI substrate with silicon film thickness of 1. ...

2008

Fabrication of Silicon-On-Insulator MEM Resonators with Deep Sub-Micron Transduction Gaps

Mihai Adrian Ionescu, Cyrille Hibert, Marco Mazza, Nicoleta-Diana Ciressan

2007

25.5 Mhz Silicon-on-insulator Bulk-mode Resonators: Design, Fabrication and Electrical Characterization

Mihai Adrian Ionescu, Marco Mazza, Nicoleta-Diana Ciressan

2005