Publications de Ananda Sankar Roy

Measurement of the inclusive and differential t(t)over-bar gamma cross sections in the dilepton channel and effective field theory interpretation in proton-proton collisions at root s=13 TeV

Jean-François Carlin, Rakesh Chawla, Richard Pitts, Arvind Shah, Ian Smith, Randoald Müller, Carlos Andres Peña Reyes, Jung Eung Park, Thomas Mountford, Matthias Finger, Jin Won Seo, Johannes Steen, Josef Andreas Schuler, Olivier Martin, Melody Swartz, Kyumin Lee, Hoang-Trang Lam, Maria Isabel Cordero Campana, Ananda Sankar Roy, Bertrand François, Yogesh Singh Chauhan, Xiaoqiang Wang, Miguel Fernández Ruiz, Sun Hee Kim, Jian Zhao, João Miguel das Neves Duarte, Justin Terence Notz Pekkanen, Joo Yeon Kim, Alexis Kalogeropoulos, Jae-Woo Choi, Pedro Camilo de Oliveira e Silva, Cristopher Ariel Zeballos Avila, Myun Sik Kim, Chao Wang, Yixing Chen, Aravind Kumar Chandiran, Tian Cheng, Ana Margarida Da Costa Ricardo, , , , , , , , , , , ,

Impact of Lateral Asymmetry of MOSFETs on the Gate and Drain Noise Correlation

Christian Enz, Ananda Sankar Roy

Recent studies of Lim et al. have shown that channel engineering can effectively be used to globally improve the device noise performance. This happens because the doping profile can strongly impact the correlation between the drain and induc ...

2008

Compact Modeling of Noise in Nonuniform Channel MOSFET

Christian Enz, Ananda Sankar Roy

2008

Source–Drain Partitioning in MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

The Ward-Dutton (WD) partitioning scheme [IEEE Trans. Electron Devices, vol. ED-27, p. 1571, Aug. 1980] is used extensively to develop transient and high-frequency advanced compact models for MOSFET devices. Recently, it has been shown that WD partitioning ...

2007

Noise Modeling in Lateral Nonuniform MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

In this paper, we present an analytical noise modeling methodology for lateral nonuniform MOSFET. We demonstrate that the noise properties of lateral nonuniform MOSFETs are considerably different from the prediction obtained with the conventional Klaassen- ...

2007

Analytical Modeling of Large-Signal Cyclo-Stationary Low-Frequency Noise With Arbitrary Periodic Input

Christian Enz, Ananda Sankar Roy

Low-frequency (LF) noise under cyclo-stationary excitation has received considerable attention recently. Until now, only semiempirical models for cyclo-stationary random telegraph signal (RTS) and flicker noise have been reported in the literature. In this ...

2007

An Analytical Thermal Noise Model of DG MOSFET and Comparison with Bulk MOSFET

Christian Enz, Ananda Sankar Roy

2007

Analytical Noise Modeling in MOSFET

Christian Enz, Ananda Sankar Roy

2007

A Charge-Based Compact Flicker Noise Model Including Short-channel Effects

Christian Enz, Ananda Sankar Roy

2007

Theory of Source-Drain Partitioning in MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2007

Noise and small-signal modeling of nanoscale MOSFETs

Ananda Sankar Roy

After years of intensive research effort, the design of RF integrated circuits in CMOS has now reached a wide acceptance for industrial designs. This is due to the high unity gain frequency and low-noise performance of today's deep sub micrometer MOS trans ...

EPFL2007

Noise Modeling in Lateral Asymmetric MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy, Yogesh Singh Chauhan

2006

On The Compact Modelling of Induced Gate Noise in the MOS Transistor

Christian Enz, Ananda Sankar Roy

2006

Validity of the Flat Band Perturbation Technique in Non-ohmic Region

Christian Enz, Ananda Sankar Roy

2006

Analytical Modelling of Large Signal Cyclostationary Low Frequency Noise for Arbitrary Periodic Input

Christian Enz, Ananda Sankar Roy

2006

Generalized Source/Drain Partitioning in MOSFET

Christian Enz, Ananda Sankar Roy

2006

A Charge-Based Compact Model of Double Gate MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2006

Noise Modeling Methodologies in the Presence of Mobility Degradation and their Equivalence

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

Institute of Electrical and Electronics Engineers2006

Compact Modeling of Anomalous High-Frequency Behavior of MOSFET's Small-Signal NQS Parameters in Presence of Velocity Saturation

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2006

Partitioning Schemes in the Lateral Asymmetric MOST

Michel Declercq, Christian Enz, Jean-Michel Sallese, Mihai Adrian Ionescu, Ananda Sankar Roy, Yogesh Singh Chauhan

Lateral asymmetric MOSFET, which has longitudinal doping variation in the channel, is the core of high voltage MOSFET. Recently it has been recognized that capacitance property of this kind of device is fundamentally different from conventional MOST becaus ...

2006