Publications de Maxim Gureev | EPFL Graph Search

Anomalously thick domain walls in ferroelectrics

Nava Setter, Alexander Tagantsev, Maxim Gureev, Tomas Sluka, Petr Yudin

Using the Landau theory we demonstrate the possibility of unusual, anomalously thick ferroelectric domain walls, where the order parameter rotates with a nearly constant modulus as in ferromagnets. The effect occurs in 90 degrees charged domain walls and i ...

Amer Physical Soc2015

A dynamic operation of a PIN photodiode

Maher Kayal, Serguei Okhonin, Alexander Tagantsev, Marc Pastre, Adil Koukab, Denis Sallin, Maxim Gureev, Alexander Kvasov

Traditionally, photodiodes operate at static reverse bias, and incident light intensity is obtained from the relatively week photocurrent. In this paper, we introduce a different concept of photodiode function: the photodiode is used in a dynamic regime wh ...

American Institute of Physics2015

Anomalously thick domain walls in ferroelectrics (vol 91, 060102, 2015)

Nava Setter, Alexander Tagantsev, Maxim Gureev, Tomas Sluka, Petr Yudin

Amer Physical Soc2015

Ferroelectric charged domain walls in an applied electric field

Nava Setter, Alexander Tagantsev, Pavel Mokry, Maxim Gureev

The interaction of electric field with charged domain walls in ferroelectrics is theoretically addressed. Ageneral expression for the force acting per unit area of a charged domain wall carrying free charge is derived. It is shown that, in proper ferroelec ...

American Physical Society2012

Macroscopic Theory of Charged Domain Walls in Ferroelectrics

Maxim Gureev

This thesis consists of a theoretical analysis of charged domain walls in ferroelectrics based on Landau theory and the theory of semiconductors. First, the internal structure of a 180-degree charged domain wall is considered. It is shown that different re ...

EPFL2012

Enhanced electromechanical response of ferroelectrics due to charged domain walls

Dragan Damjanovic, Nava Setter, Alexander Tagantsev, Maxim Gureev, Tomas Sluka

While commonly used piezoelectric materials contain lead, non-hazardous, high-performance piezoelectrics are yet to be discovered. Charged domain walls in ferroelectrics are considered inactive with regards to the piezoelectric response and, therefore, are ...

Nature Research2012

Control of the Screening Ability at a Ferroelectric-Semiconductor Interface

Nava Setter, Alexander Tagantsev, Maxim Gureev

Recent progress in integrating ferroelectrics directly on silicon opens the exciting possibility of implementing ferroelectric-semiconductor devices [1]. One of the major problems for such integration is the instability of the ferroelectric state in very t ...

2011

Structure and Energy of Charged Domain Walls in Ferroelectrics

Nava Setter, Alexander Tagantsev, Maxim Gureev

The problem of the structure and energy of a charged 180-degree head-to-head domain wall is considered, using Landau theory. It was found that the scales controlling the wall structure can be very different from the Debye radius. Depending on the spontaneo ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Self-Assembled Perovskite-Fluorite Oblique Nanostructures for Adaptive (Tunable) Electronics

Paul Muralt, Nava Setter, Alexander Tagantsev, Silviu Cosmin Sandu, Andreas Nöth, Maxim Gureev

The relative concentration of BaTiO3 and CeO2 is shown to control the inclination of composite growth. The oblique composite structures consist of tunable BaTiO3 nanofibers embedded in a CeO2 matrix, which lowers considerably the permittivity while signifi ...

Wiley2009