Publications de Clara-Fausta Moldovan

Fully integrated Si:HfO2 Negative Capacitance 2D-2D WSe2/SnSe2 Subthermionic Tunnel FETs

Mihai Adrian Ionescu, Jürgen Brugger, Clara-Fausta Moldovan, Ali Saeidi, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Xia Liu

We report the first experimental demonstration and performance characterization of a fully integrated negative capacitance (NC) WSe2/SnSe2 p-type Tunnel FETs (TFETs), validating the use of NC as a technology booster to achieve a significantly improved sub- ...

IEEE2022

Magnetoplasmonic enhancement of Faraday rotation in patterned graphene metasurfaces

Juan Ramon Mosig, Mihai Adrian Ionescu, Clara-Fausta Moldovan

2018

Near optimal graphene terahertz non-reciprocal isolator

Juan Ramon Mosig, Julien Perruisseau-Carrier, Mihai Adrian Ionescu, Clara-Fausta Moldovan, Michele Tamagnone

Isolators, or optical diodes, are devices enabling unidirectional light propagation by using non-reciprocal optical materials, namely materials able to break Lorentz reciprocity. The realization of isolators at terahertz frequencies is a very important ope ...

Nature Publishing Group2016

Graphene quantum capacitors for high-Q tunable LC-tanks for RF ICs

Juan Ramon Mosig, Mihai Adrian Ionescu, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale, Michele Tamagnone

We propose and characterize graphene quantum capacitors, tunable with voltage by the control of their charge density, for tunable LC tanks as essential building blocks for Radio-Frequency (RF) functions in densely integrated circuits. We fabricate and inve ...

IEEE2016

Field-enhanced design of steep-slope VO2 switches for low actuation voltage

Juan Ramon Mosig, Mihai Adrian Ionescu, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale, Emanuele Andrea Casu, Michele Tamagnone, Luca Petit

The abrupt metal-insulator transition in vanadium dioxide (VO2) offers novel performance and functionality for beyond CMOS switches, enabling simultaneous high ON current and ultra-steep subthreshold slope with low temperature dependence. We developed a fi ...

IEEE2016

Graphene Quantum Capacitors for High Frequency Tunable Analog Applications

Juan Ramon Mosig, Mihai Adrian Ionescu, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale, Pankaj Sharma, Michele Tamagnone

Graphene quantum capacitors (GQC) are demonstrated to be enablers of radio-frequency (RF) functions through voltage-tuning of their capacitance. We show that GQC complements MEMS and MOSFETs in terms of performance for high frequency analog applications an ...

American Chemical Society (ACS)2016

Tri-Band, Polarization-Independent Reflectarray at Terahertz Frequencies: Design, Fabrication, and Measurement

Juan Ramon Mosig, Anja Skrivervik, Julien Perruisseau-Carrier, Mihai Adrian Ionescu, Clara-Fausta Moldovan, Hamed Hasani, Pietro Maoddi, Michele Tamagnone, Santiago Capdevila Cascante

In this paper, two THz reflectarray surfaces have been designed and fabricated in order to deflect a plane wave with any polarization and with a specific incident angle to three different specific directions each at distinct three frequencies of 0.7, 1.0 a ...

Ieee-Inst Electrical Electronics Engineers Inc2016

Electrothermal actuation of vanadium dioxide for tunable capacitors and microwave filters with integrated microheaters

Mihai Adrian Ionescu, Andreas Schueler, Montserrat Fernandez-Bolanos Badia, Antonio Paone, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale, Luca Petit

We report the fabrication, modeling and characterization of novel microwave tunable capacitors based on the metal-insulator transition (MIT) of Vanadium Dioxide (VO2) as a future replacement solution for microelectromechanical capacitive switches. We prese ...

Elsevier Science Sa2016

Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope

Mihai Adrian Ionescu, Andreas Schueler, Josef Andreas Schuler, Antonio Paone, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale

We report a thorough investigation of the electrically-induced metal-insulator transition in vanadium dioxide (VO2) for abrupt switching in 2-terminal devices (0.24 mV/dec at 25 °C, 0.38 mV/dec at 50 °C). We exploit the electrothermal actuation model based ...

IEEE2016

Enabling High Frequency Reconfigurable Functions with Graphene

Clara-Fausta Moldovan

As the scaling of complementary metal-oxide-semiconductor (CMOS) technology is reaching fundamental limitations, novel device concepts and materials have started to be investigated to overcome the scaling challenges for integrated circuits. Graphene has be ...

EPFL2016

Self-biased reconfigurable graphene stacks for terahertz plasmonics

Julien Perruisseau-Carrier, Mihai Adrian Ionescu, Arnaud Magrez, Clara-Fausta Moldovan, Laurent Syavoch Bernard, Santiago Capdevila Cascante

The gate-controllable complex conductivity of graphene offers unprecedented opportunities for reconfigurable plasmonics at terahertz and mid-infrared frequencies. However, the requirement of a gating electrode close to graphene and the single 'control knob ...

Nature Publishing Group2015

Large area suspended graphene for nano-mechanical devices

Mihai Adrian Ionescu, Clara-Fausta Moldovan

To address the need for large area dry graphene transfer techniques in Nanomechanical applications we use transfer printing to suspend large areas of graphene on pre-patterned substrates with cavities. We find that using this method, clean suspended graphe ...

Wiley-V C H Verlag Gmbh2015

Fabrication process and characterization of suspended graphene membranes for RF NEMS capacitive switches

Mihai Adrian Ionescu, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale, Laurent Syavoch Bernard, Pankaj Sharma

The fabrication of a Nanoelectromechanical System (NEMS) capacitive switch consisting of a suspended multilayer graphene membrane, doubly clamped on a coplanar waveguide (CPW) is presented and its RF performance is evaluated. The scattering parameters are ...

Elsevier2015

Graphene RF NEMS shunt switches for analog and digital phase shifters

Mihai Adrian Ionescu, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale, Michele Tamagnone

2015

Design, Fabrication and Characterization of Terahertz Reflectarrays Based on a Silicon Substrate

Juan Ramon Mosig, Anja Skrivervik, Mihai Adrian Ionescu, Clara-Fausta Moldovan, Hamed Hasani, Michele Tamagnone, Santiago Capdevila Cascante

2015

Fabrication of CMOS-compatible abrupt electronic switches based on vanadium dioxide

Mihai Adrian Ionescu, Josef Andreas Schuler, Antonio Paone, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale

Vanadium dioxide thin films were deposited on amorphous SiO2-coated Si substrates, by reactive magnetron sputtering at 490 °C of a pure vanadium target. The deposition parameters were optimized in order to maximize the resistivity modulation due to the met ...

Elsevier2015

Clara-Fausta Moldovan

Graph Chatbot

Fully integrated Si:HfO2 Negative Capacitance 2D-2D WSe2/SnSe2 Subthermionic Tunnel FETs

Magnetoplasmonic enhancement of Faraday rotation in patterned graphene metasurfaces

Near optimal graphene terahertz non-reciprocal isolator

Graphene quantum capacitors for high-Q tunable LC-tanks for RF ICs

Field-enhanced design of steep-slope VO2 switches for low actuation voltage

Graphene Quantum Capacitors for High Frequency Tunable Analog Applications

Tri-Band, Polarization-Independent Reflectarray at Terahertz Frequencies: Design, Fabrication, and Measurement

Electrothermal actuation of vanadium dioxide for tunable capacitors and microwave filters with integrated microheaters

Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope

Enabling High Frequency Reconfigurable Functions with Graphene

Self-biased reconfigurable graphene stacks for terahertz plasmonics

Large area suspended graphene for nano-mechanical devices

Fabrication process and characterization of suspended graphene membranes for RF NEMS capacitive switches

Graphene RF NEMS shunt switches for analog and digital phase shifters

Design, Fabrication and Characterization of Terahertz Reflectarrays Based on a Silicon Substrate

Fabrication of CMOS-compatible abrupt electronic switches based on vanadium dioxide

CMOS-compatible abrupt switches based on VO2 metal-insulator transition

Performance evaluation of novel technologies for terahertz reflectarrays

Evaluation of graphene for terahertz reflectarray antennas

Spatial Variability in Large Area Single and Few-layer CVD Graphene