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Gözde Tütüncüoglu

Cette personne n’est plus à l’EPFL

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Publications associées (50)

The growth and optical properties of III-V nanostructures grown by Molecular Beam Epitaxy

Gözde Tütüncüoglu

This thesis is dedicated to the growth and characterization of the optoelectronic properties of III-V semiconductor nanostructures namely nanowires and nanoscale membranes. III-V semiconductors possess promising intrinsic properties like direct band gap, h ...

EPFL2017

Conductive-probe atomic force microscopy as a characterization tool for nanowire-based solar cells

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Maria Ricci, Esther Alarcon Llado, Federico Matteini, Jelena Vukajlovic Plestina, Dmitry Mikulik, Natasa Vulic

The photonic properties of nanowires advocate for their utilization in next generation solar cells. Compared to traditional devices, the electric scheme is transformed from a single into an ensemble of pn junctions connected in parallel. This new configura ...

Elsevier Science Bv2017

Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Nicholas Paul Morgan

The need for indium droplets to initiate self-catalyzed growth of InAs nanowires has been highly debated in the last few years. Here, we report on the use of indium droplets to tune the growth direction of self-catalyzed InAs nanowires. The indium droplets ...

Institute of Physics2017

Engineering the Size Distributions of Ordered GaAs Nanowires on Silicon

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jelena Vukajlovic Plestina, Martin George Friedl, Heidi Andrea Potts, Maxime Lagier, Wonjong Kim

Reproducible integration of III-V semiconductors on silicon can open new path toward CMOS compatible optoelectronics and novel design schemes in next generation solar cells. Ordered arrays of nanowires could accomplish this task, provided they are obtained ...

2017

Plasmonic Waveguide-Integrated Nanowire Laser

Anna Fontcuberta i Morral, Gözde Tütüncüoglu

Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitiv ...

American Chemical Society2017

Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Sonia Conesa Boj

Precise control over the electrical conductivity of semiconductor nanowires is a crucial prerequisite for implementation of these nanostructures into novel electronic and optoelectronic devices. Advances in our understanding of doping mechanisms in nanowir ...

Royal Society of Chemistry2017

Visual Understanding of Light Absorption and Waveguiding in Standing Nanowires with 3D Fluorescence Confocal Microscopy

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Esther Alarcon Llado, Federico Matteini

Semiconductor nanowires are promising building blocks for next generation photonics. Indirect proofs of large absorption cross sections have been reported in nanostructures with subwavelength diameters, an effect that is even more prominent in vertically s ...

Amer Chemical Soc2017

Optical properties of GaAsSb nanowire networks and GaAs nanomembranes

Alessandro Surrente, Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Martin George Friedl, Heidi Andrea Potts

Ieee2016

Quantum Heterostructures Based on GaAs Nanomembranes for Photonic Applications

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Federico Matteini, Martin George Friedl, Heidi Andrea Potts

Ieee2016

Time-Resolved Nonlinear Coupling between Orthogonal Flexural Modes of a Pristine GaAs Nanowire

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Federico Matteini

We demonstrate nonlinear coupling between two orthogonal flexural modes of single as-grown GaAs nanowires. The resonant frequency of one mode can be shifted over many line widths by mechanically driving the other mode. We present time-domain measurements o ...

American Chemical Society2016

Tuning the response of non-allowed Raman modes in GaAs nanowires

Anna Fontcuberta i Morral, Emanuele Uccelli, Gözde Tütüncüoglu, Esther Alarcon Llado, Federico Matteini, Francesca Amaduzzi, Hubert Hautmann

We report on the use of photonic resonances in Raman spectroscopy on single nanowires for the enhancement of forbidden modes and the study of the interaction of phonons with free-carriers. This is achieved by suspending nanowire over a trench and detecting ...

Iop Publishing Ltd2016

From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Esther Alarcon Llado, Federico Matteini, Francesca Amaduzzi, Martin George Friedl, Heidi Andrea Potts

III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as In As and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, ...

American Chemical Society2016

Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Federico Matteini, Jelena Vukajlovic Plestina, Heidi Andrea Potts, William Craig Carter, Dmitry Mikulik

Ga-catalyzed growth of GaAs nanowires on Si is a candidate process for achieving seamless III/V integration on IV. In this framework, the nature of silicon's surface oxide is known to have a strong influence on nanowire growth and orientation and therefore ...

American Chemical Society2016

Towards defect-free 1-D GaAs/AlGaAs heterostructures based on GaAs nanomembranes

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Davide Deiana, Federico Matteini, Heidi Andrea Potts

We demonstrate the growth of defect-free zinc-blende GaAs nanomembranes by molecular beam epitaxy. Our growth studies indicate a strong impact of As-4 re-emission and shadowing in the growth rate of the structures. The highest aspect ratio structures are o ...

Royal Soc Chemistry2015

Bottom-up engineering of InAs at the nanoscale: From V-shaped nanomembranes to nanowires

Anna Fontcuberta i Morral, Anna Dalmau Mallorquí, Gözde Tütüncüoglu, Sonia Conesa Boj, Eleonora Russo, Ignasi Canales Mundet

The ability to rationally tune the morphology of nanostructures is a fundamental milestone in nanoscale engineering. In particular, the possibility to switch between different shapes within the same material system represents a further step in the developm ...

Elsevier2015

Wetting of Ga on SiOx and Its Impact on GaAs Nanowire Growth

Gözde Tütüncüoglu, Federico Matteini, Fauzia Jabeen, Heidi Andrea Potts

Ga-assisted growth of GaAs nanowires on silicon provides a path for integrating high-purity III-Vs on silicon. The nature of the oxide on the silicon surface has been shown to impact the overall possibility of nanowire growth and their orientation with the ...

American Chemical Society2015

High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga

Anna Fontcuberta i Morral, Anna Dalmau Mallorquí, Gözde Tütüncüoglu, Sonia Conesa Boj, Eleonora Russo, Federico Matteini, Jelena Vukajlovic Plestina, Heidi Andrea Potts

GaAs nanowire arrays on Silicon offer great perspectives in the :optoeleetronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nano-wires in the form of array ...

American Chemical Society2015

Magnetization reversal of an individual exchange-biased permalloy nanotube

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Dirk Grundler, Federico Matteini

We investigate the magnetization reversal mechanism in an individual permalloy (Py) nanotube (NT) using a hybrid magnetometer consisting of a nanometer-scale SQUID (nanoSQUID) and a cantilever torque sensor. The Py NT is affixed to the tip of a Si cantilev ...

American Physical Society2015

Nonstoichiometric Low-Temperature Grown GaAs Nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Federico Matteini, Heidi Andrea Potts, Tao Xu

The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump probe reflectivity, and cathodoluminescence measurements. The growth o ...

American Chemical Society2015

Hybrid Semiconductor Nanowire-Metallic Yagi-Uda Antennas

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Alberto Casadei, Federico Matteini, Mohammad Ramezani

We demonstrate the directional emission of individual GaAs nanowires by coupling this emission to Yagi-Uda optical antennas. In particular, we have replaced the resonant metallic feed element of the nanoantenna by an individual nanowire and measured with t ...

American Chemical Society2015

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