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Jean-Baptiste Leran

Cette personne n’est plus à l’EPFL

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Publications associées (36)

Dataset for "Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning"

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Reza Zamani, Martin George Friedl, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Valerio Piazza

Raw data associated with the publication "Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning", first published in Nanoscale Advances on the 23nd November 2020. ...

Zenodo2020

Multiple morphologies and functionality of nanowires made from earth-abundant zinc phosphide

Thomas La Grange, Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Nicolas Tappy, Reza Zamani, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul

Semiconductors made of earth-abundant elements, such as zinc phosphide, have the potential to substitute less abundant, highly functional compound semiconductors such as InAs or InP. Compound semiconductors in the form of nanowires could revolutionise appl ...

2020

Dataset for "Raman spectroscopy and lattice dynamics calculations of tetragonally-structured single crystal zinc phosphide (Zn3P2) nanowires"

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Mirjana Dimitrievska

Earth-abundant and low-cost semiconductors, such as zinc phosphide (Zn3P2), are promising candidates for the next generation photovoltaic applications. However, synthesis on commercially available substrates, which favors the formation of defects, and cont ...

Zenodo2020

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Lucas Güniat, Nicolas Tappy, Martin George Friedl, Nicholas Paul Morgan, Wonjong Kim, Santhanu Panikar Ramanandan, Akshay Balgarkashi, Didem Dede

Raw dataset and image files used for the publication ...

2020

Heterotwin Zn3P2 superlattice nanowires: the role of indium insertion in the superlattice formation mechanism and their optical properties

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Nicolas Tappy, Reza Zamani, Mahdi Zamani, Lea Ghisalberti, Simon Robert Escobar Steinvall, Rajrupa Paul

Zinc phosphide (Zn3P2) nanowires constitute prospective building blocks for next generation solar cellsdue to the combination of suitable optoelectronic properties and an abundance of the constitutingelements in the Earth’s crust. The generation of periodi ...

2020

III–V Integration on Si(100): Vertical Nanospades

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Lucas Güniat, Nicolas Tappy, Martin George Friedl, David Vindice, Luca Francaviglia, Megane Boscardin, Mahdi Zamani, Wonjong Kim, Sara Marti Sanchez, Akshay Balgarkashi, Oscar Garcia Garcia

2019

Multiple morphologies and functionality of nanowires made from earth-abundant zinc phosphide

Thomas La Grange, Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Nicolas Tappy, Reza Zamani, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul

The raw data used in the publication of MBE grown Zinc Phosphide nanowires. ...

2019

Bi-stability of contact angle and its role in tuning the morphology of self-assisted GaAs nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Lucas Güniat, Jelena Vukajlovic Plestina, Martin George Friedl, Heidi Andrea Potts, Luca Francaviglia, Wonjong Kim, Vladimir Dubrovskii

We demonstrate the existence of two stable contact angles for the gallium droplet on top of self-assisted GaAs nanowires grown by MBE on patterned silicon substrates. Contact angle around 130 degrees fosters a continuous increase in the nanowire radius, wh ...

IEEE2018

Bistability of Contact Angle and Its Role in Achieving Quantum-Thin Self-Assisted GaAs nanowires

American Chemical Society (ACS)2018

Imaging Stray Magnetic Field of Individual Ferromagnetic Nanotubes

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Lucas Güniat, Dirk Grundler, Reza Zamani, Jelena Vukajlovic Plestina, Martin George Friedl, Heidi Andrea Potts, Luca Francaviglia, Nicola Rossi, Wonjong Kim, Vladimir Dubrovskii

American Chemical Society (ACS)2018

Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Lucas Güniat, Martin George Friedl, Heidi Andrea Potts, Luca Francaviglia, Edoardo Markov, Mahdi Zamani, Lea Ghisalberti, Wonjong Kim, Sara Marti Sanchez, Vladimir Dubrovskii

2018

Tilting Catalyst-Free InAs Nanowires by 3D-Twinning and Unusual Growth Directions

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Martin George Friedl, Heidi Andrea Potts, Youri Louis Winandus Van Hees

Controlling the growth direction of nanowires is of strategic importance both for applications where nanowire arrays are contacted in parallel and for the formation of more complex nanowire networks. We report on the existence of tilted InAs nanowires on ( ...

American Chemical Society2017

Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Federico Matteini, Jelena Vukajlovic Plestina, Heidi Andrea Potts, William Craig Carter, Dmitry Mikulik

Ga-catalyzed growth of GaAs nanowires on Si is a candidate process for achieving seamless III/V integration on IV. In this framework, the nature of silicon's surface oxide is known to have a strong influence on nanowire growth and orientation and therefore ...

American Chemical Society2016

Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Federico Matteini, Frank Meyer, Ruben Ricca, Jelena Vukajlovic Plestina, Heidi Andrea Potts, Vladimir Dubrovskii

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam ...

Institute of Physics2016

Optical properties of GaAsSb nanowire networks and GaAs nanomembranes

Alessandro Surrente, Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Martin George Friedl, Heidi Andrea Potts

Ieee2016

Quantum Heterostructures Based on GaAs Nanomembranes for Photonic Applications

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Federico Matteini, Martin George Friedl, Heidi Andrea Potts

Ieee2016

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