Publications de Ruben Ricca | EPFL Graph Search

Influence of ionization and cumulative effects on laser-induced crystallization in multilayer dielectrics

Yves Bellouard, Ruben Ricca, Victor Carle Adrien Boureau

Crystallization of amorphous layers has been demonstrated under various radically different laser-exposure conditions, including continuous wave (cw) and pulsed lasers. Here, we investigate the specific role of ionization in the crystallization of dielectr ...

2024

Non-volatile data storage medium and system

Martin Vetterli, Yves Bellouard, Ruben Ricca

A data storage medium (2) comprising a stacked plurality of layers (9), each layer composed of a layer material selected from a group comprising at least two different dielectric materials, adjacent layers being formed of different materials, and at least ...

2023

On the interaction of femtosecond laser pulses with layered dielectric materials

Ruben Ricca

Materials properties are strictly dependent on their microstructure. The internal symmetries and the disposition of the constituting atoms of a material, which depend on its crystallographic structure, greatly affect its response to mechanical, electromagn ...

EPFL2023

Single-Layer Subwavelength Femtosecond-Laser-Induced Confined Nanocrystallization in Multistack Dielectrics

Yves Bellouard, Ruben Ricca

We demonstrate extreme laser-induced modification confinement in a stack of dielectric layers, along the optical axis, without the use of tight focusing. Specifically, we show that an aperiodic distribution of layer thicknesses can effectively lead to the ...

American Physical Society (APS)2023

Ultrafast laser interaction with transparent multi-layer SiO2/Si3N4 films

Yves Bellouard, Ruben Ricca, Victor Carle Adrien Boureau

We investigate the use of ultrafast lasers exposure to induce localized crystallization and elemental redistribution in amorphous dielectric multi-layers, composed of alternating Si3N4 and SiO2 layers of sub-micrometer thickness. Specifically, we report on ...

2021

Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Federico Matteini, Frank Meyer, Ruben Ricca, Jelena Vukajlovic Plestina, Heidi Andrea Potts, Vladimir Dubrovskii

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam ...

Institute of Physics2016