Publications de Giovanni Vincenzo Resta

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâ s la ...

EPFL2019

Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Giovanni Vincenzo Resta

Here, we review the most recent developments in the field of 2-D electronics. We focus first on the synthesis of 2-D materials, discussing the different growth techniques currently available and assessing their strengths and weaknesses. Moreover, we descri ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Giovanni Vincenzo Resta

Atomically thin two-dimensional (2D) materials belonging to transition metal dichalcogenides, due to their physical and electrical properties, are an exceptional vector for the exploration of next-generation semiconductor devices. Among them, due to the po ...

2018

Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Giovanni Vincenzo Resta

Amongst 2-dimensional (2D) semiconductors of the transition-metal di-chalcogenide (TMDC) family [1], tungsten diselenide (WSe2) has shown ambipolar behavior [2], [3] coupled with high carrier mobility [4] and CMOS-like devices have been experimentally demo ...

IEEE2018

Towards high-performance polarity-controllable FETs with 2D materials, 2018 Design

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Giovanni Vincenzo Resta

As scaling of conventional silicon-based electronics is reaching its ultimate limit, two-dimensional semiconducting materials of the transition-metal-dichalcogenides family, such as MoS2 and WSe2, are considered as viable candidates for next-generation ele ...

IEEE2018

Scaling trends and performance evaluation of 2-dimensional polarity-controllable FETs

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Giovanni Vincenzo Resta

Two-dimensional semiconducting materials of the transition-metal-dichalcogenide family, such as MoS2 and WSe2, have been intensively investigated in the past few years, and are considered as viable candidates for next-generation elect ...

Nature Research2017

Polarity control in WSe2 double-gate transistors

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Giovanni Vincenzo Resta

As scaling of conventional silicon-based electronics is reaching its ultimate limit, considerable effort has been devoted to find new materials and new device concepts that could ultimately outperform standard silicon transistors. In this perspective two-d ...

Nature Research2016