Publications de Jelena Vukajlovic Plestina

Time-resolved open-circuit conductive atomic force microscopy for direct electromechanical characterisation

Anna Fontcuberta i Morral, Jelena Vukajlovic Plestina, Wonjong Kim

Studying nanomaterial piezoelectricity and triboelectricity is attractive for energy and sensing applications. However, quantitative characterisation of electromechanical effects in nanomaterials is challenging due to practical limitations and possible com ...

2020

Does desorption affect the length distributions of nanowires?

Anna Fontcuberta i Morral, Jelena Vukajlovic Plestina, Wonjong Kim, Vladimir Dubrovskii

State-of-the art models for statistical properties within the nanowire ensembles consider influx of precursors, reflection and surface diffusion of adatoms. These models predict a delay in the nanowire growth start and the evolution toward an asymmetric le ...

2019

Dataset for "Does desorption affect the length distributions of nanowires?"

Anna Fontcuberta i Morral, Jelena Vukajlovic Plestina, Wonjong Kim

State-of-the art models for statistical properties within the nanowire ensembles consider influx of precursors, reflection and surface diffusion of adatoms. These models predict a delay in the nanowire growth start and the evolution toward an asymmetric le ...

Zenodo2019

Highly sensitive piezotronic pressure sensors based on undoped GaAs nanowire ensembles

Anna Fontcuberta i Morral, Jelena Vukajlovic Plestina, Wonjong Kim

Semiconducting piezoelectric materials have attracted considerable interest due to their central role in the emerging field of piezotronics, where the development of a piezo-potential in response to stress or strain can be used to tune the band structure o ...

IOP Publishing2019

Fundamental aspects to localize self-catalyzed III-V nanowires on silicon

Anna Fontcuberta i Morral, Jelena Vukajlovic Plestina, Martin George Friedl, Heidi Andrea Potts, William Craig Carter, Lea Ghisalberti, Wonjong Kim, Vladimir Dubrovskii

III-V semiconductor nanowires deterministically placed on top of silicon electronic platform would open many avenues in silicon-based photonics, quantum technologies and energy harvesting. For this to become a reality, gold-free site-selected growth is nec ...

Nature Research2019

Bistability of Contact Angle and Its Role in Achieving Quantum-Thin Self-Assisted GaAs nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Lucas Güniat, Jelena Vukajlovic Plestina, Martin George Friedl, Heidi Andrea Potts, Luca Francaviglia, Wonjong Kim, Vladimir Dubrovskii

American Chemical Society (ACS)2018

Plasmonic Photodetectors

Anna Fontcuberta i Morral, Jelena Vukajlovic Plestina, Nolan Lassaline, Dmitry Mikulik, Pablo Romero Gómez

2018

Anisotropic-Strain-Induced Band Gap Engineering in Nanowire-Based Quantum Dots

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Lucas Güniat, Jelena Vukajlovic Plestina, Martin George Friedl, Heidi Andrea Potts, Luca Francaviglia, Andrea Giunto, Wonjong Kim, Pablo Romero Gómez

American Chemical Society (ACS)2018

Imaging Stray Magnetic Field of Individual Ferromagnetic Nanotubes

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Lucas Güniat, Dirk Grundler, Reza Zamani, Jelena Vukajlovic Plestina, Martin George Friedl, Heidi Andrea Potts, Luca Francaviglia, Nicola Rossi, Wonjong Kim, Vladimir Dubrovskii

American Chemical Society (ACS)2018

Bi-stability of contact angle and its role in tuning the morphology of self-assisted GaAs nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Lucas Güniat, Jelena Vukajlovic Plestina, Martin George Friedl, Heidi Andrea Potts, Luca Francaviglia, Wonjong Kim, Vladimir Dubrovskii

We demonstrate the existence of two stable contact angles for the gallium droplet on top of self-assisted GaAs nanowires grown by MBE on patterned silicon substrates. Contact angle around 130 degrees fosters a continuous increase in the nanowire radius, wh ...

IEEE2018

Nanoporous silicon tubes: the role of geometry in nanostructure formation and application to light emitting diodes

Anna Fontcuberta i Morral, Jelena Vukajlovic Plestina, Francesca Amaduzzi, Heidi Andrea Potts, Luca Francaviglia

Obtaining light emission from silicon has been the holy grail of optoelectronics over the last few decades. One of the most common methods for obtaining light emission from silicon is to reduce it to a nanoscale structure, for example by producing porous s ...

Institute of Physics2017

Engineering the Size Distributions of Ordered GaAs Nanowires on Silicon

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jelena Vukajlovic Plestina, Martin George Friedl, Heidi Andrea Potts, Maxime Lagier, Wonjong Kim

Reproducible integration of III-V semiconductors on silicon can open new path toward CMOS compatible optoelectronics and novel design schemes in next generation solar cells. Ordered arrays of nanowires could accomplish this task, provided they are obtained ...

2017

Conductive-probe atomic force microscopy as a characterization tool for nanowire-based solar cells

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Maria Ricci, Esther Alarcon Llado, Federico Matteini, Jelena Vukajlovic Plestina, Dmitry Mikulik, Natasa Vulic

The photonic properties of nanowires advocate for their utilization in next generation solar cells. Compared to traditional devices, the electric scheme is transformed from a single into an ensemble of pn junctions connected in parallel. This new configura ...

Elsevier Science Bv2017

Ordered nanostructures on silicon substrates : from the top-down to the bottom-up

Jelena Vukajlovic Plestina

Silicon is today the main material used in electronics. It is a very advanced and mature technology. It is therefore clear that new technological concepts and materials should be introduced through the integration on the silicon platform. III-V semiconduct ...

EPFL2017

Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Federico Matteini, Jelena Vukajlovic Plestina, Heidi Andrea Potts, William Craig Carter, Dmitry Mikulik

Ga-catalyzed growth of GaAs nanowires on Si is a candidate process for achieving seamless III/V integration on IV. In this framework, the nature of silicon's surface oxide is known to have a strong influence on nanowire growth and orientation and therefore ...

American Chemical Society2016

Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Federico Matteini, Frank Meyer, Ruben Ricca, Jelena Vukajlovic Plestina, Heidi Andrea Potts, Vladimir Dubrovskii

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam ...

Institute of Physics2016

High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga

Anna Fontcuberta i Morral, Anna Dalmau Mallorquí, Gözde Tütüncüoglu, Sonia Conesa Boj, Eleonora Russo, Federico Matteini, Jelena Vukajlovic Plestina, Heidi Andrea Potts

GaAs nanowire arrays on Silicon offer great perspectives in the :optoeleetronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nano-wires in the form of array ...

American Chemical Society2015