Publications de Santhanu Panikar Ramanandan

Gate-Tunable Hole Transport in In-Plane Ge Nanowires by V-Groove Confined Selective Epitaxy

Alok Rudra, Anna Fontcuberta i Morral, Santhanu Panikar Ramanandan, Victor Carle Adrien Boureau

Germanium (Ge) nanowires hold great promise as building blocks for hole spin-based quantum processors. Realizing this potential requires their direct integration onto silicon (Si) wafers. This work introduces V-groove-confined selective epitaxy to enable t ...

WILEY-V C H VERLAG GMBH2025

Data set for Gate-Tunable Hole Transport in In-Plane Ge Nanowires by V-Groove Confined Selective Epitaxy

Santhanu Panikar Ramanandan

This folder contains all the raw and processed data used for the manuscript titled: Gate-Tunable Hole Transport in In-Plane Ge Nanowires by V-Groove Confined Selective Epitaxy ...

Zenodo2025

On-chip Germanium nanowires for hole spin qubits

Santhanu Panikar Ramanandan

The creation of a universal quantum computer that can solve complex problems beyond the reach of classical computers - the so-called "quantum supremacy" - is an open challenge. For this to become a reality, a large number of qubits should be integrated in ...

EPFL2025

PRACTISING ETHICS IN ENGINEERING AND SCIENCE EDUCATION

Santhanu Panikar Ramanandan, Jaïr Kees Evert Karel Campfens, Laura Filippa Ferrarello

Technological advancements are expanding continuously to affect more private, societal, and environmental aspects of our lives. This raises a serious need to equip those who lead and build such technologies with the skills that apply ethical principles to ...

2024

Control of Ge island coalescence for the formation of nanowires on silicon

Alok Rudra, Anna Fontcuberta i Morral, Santhanu Panikar Ramanandan

Germanium nanowires could be the building blocks of hole-spin qubit quantum computers. Selective area epitaxy enables the direct integration of Ge nanowires on a silicon chip while controlling the device design, density, and scalability. For this to become ...

2024

Data set for control of Ge island coalescence for the formation of nanowires on silicon

Alok Rudra, Anna Fontcuberta i Morral, Sara Marti Sanchez, Santhanu Panikar Ramanandan, Joel René Sapera, Vladimir Dubrovskii

This document contains all the data and the details of the analysis used in the manuscript titled " Control of Ge island coalescence for the formation of nanowires on silicon." https://doi.org/10.1039/D3NH00573A ...

EPFL Infoscience2024

The implementation of thermal and UV nanoimprint lithography for selective area epitaxy

Alok Rudra, Anna Fontcuberta i Morral, Nicholas Paul Morgan, Santhanu Panikar Ramanandan, Didem Dede, Valerio Piazza

Semiconductor nanowires (NWs) in horizontal configuration could provide a path for scalable NW-based devices. Bottom-up large-scale manufacturing of these nanostructures by selective area epitaxy (SAE) relies on precise nanopatterning of various shapes on ...

2023

Understanding the growth mechanism of BaZrS3 chalcogenide perovskite thin films from sulfurized oxide precursors

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Andrea Giunto, Santhanu Panikar Ramanandan, Iléane Tiphaine Françoise Marie Lefevre, Mirjana Dimitrievska

Barium zirconium sulfide (BaZrS3) is an earth-abundant and environmentally friendly chalcogenide perovskite with promising properties for various energy conversion applications. Recently, sulfurization of oxide precursors has been suggested as a viable sol ...

IOP Publishing Ltd2023

Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks

Alok Rudra, Anna Fontcuberta i Morral, Nicholas Paul Morgan, Andrea Giunto, Santhanu Panikar Ramanandan

Holes in germanium nanowires have emerged as a realistic platform for quantum computing based on spin qubit logic. On top of the large spin–orbit coupling that allows fast qubit operation, nanowire geometry and orientation can be tuned to cancel out charge ...

American Chemical Society (ACS)2022

Raman tensor of zinc-phosphide (Zn3P2): from polarization measurements to simulation of Raman spectra

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Santhanu Panikar Ramanandan, Rajrupa Paul, Mirjana Dimitrievska, Mischa Samuel Flór

Zinc phosphide (Zn3P2) is a II–V compound semiconductor with promising photovoltaic and thermoelectric applications. Its complex structure is susceptible to facile defect formation, which plays a key role in further optimization of the material. Raman spec ...

2022

Stoichiometry modulates the optoelectronic functionality of Zinc Phosphide (Zn3-xP2+x)

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Maria Chiara Spadaro, Simon Robert Escobar Steinvall, Santhanu Panikar Ramanandan, Rajrupa Paul, Diego Armando Sandoval Salaiza, Mirjana Dimitrievska, Mischa Samuel Flór

Predictive synthesis–structure–property relationships are at the core of materials design for novel applications. In this regard, correlations between the compositional stoichiometry variations and functional properties are essential for enhancing the perf ...

2022

Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks

Alok Rudra, Nicholas Paul Morgan, Andrea Giunto, Santhanu Panikar Ramanandan

This document contains all the raw data files used for the manuscript. ...

EPFL Infoscience2022

Dataset for "Cubic, hexagonal and tetragonal FeGex phases (x = 1, 1.5, 2): Raman spectroscopy and magnetic properties"

Anna Fontcuberta i Morral, Dirk Grundler, Nicolas Tappy, Santhanu Panikar Ramanandan, Anna Kúkol'ová, Mirjana Dimitrievska

Raw data associated to the manuscript “Cubic, hexagonal and tetragonal FeGex phases (x = 1, 1.5, 2): Raman spectroscopy and magnetic properties", CrystEngComm 2021, XXXX, XXX, XXX-XXX There is currently an emerging drive to computational materials design ...

Zenodo2021

Cubic, hexagonal and tetragonal FeGex phases (x = 1, 1.5, 2): Raman spectroscopy and magnetic properties

Anna Fontcuberta i Morral, Dirk Grundler, Nicolas Tappy, Santhanu Panikar Ramanandan, Anna Kúkol'ová, Mirjana Dimitrievska

There is currently an emerging drive towards computational materials design and fabrication of predicted novel materials. One of the keys to developing appropriate fabrication methods is determination of the composition and phase. Here we explore the FeGe ...

2021

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Lucas Güniat, Nicolas Tappy, Martin George Friedl, Wonjong Kim, Santhanu Panikar Ramanandan, Akshay Balgarkashi, Didem Dede

Embedding quantum dots in nanowires (NWs) constitutes one promising building block for quantum photonic technologies. Earlier attempts to grow InAs quantum dots on GaAs nanowires were based on the Stranski-Krastanov growth mechanism. Here, we propose a nov ...

2020

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Lucas Güniat, Nicolas Tappy, Martin George Friedl, Nicholas Paul Morgan, Wonjong Kim, Santhanu Panikar Ramanandan, Akshay Balgarkashi, Didem Dede

Raw dataset and image files used for the publication ...

2020

Solution-Processed Organic Optical Upconversion Device

Frank Nüesch, Roland Hany, Santhanu Panikar Ramanandan, Sina Abdolhosseinzadeh, Matthias Diethelm

Imaging in the near-infrared (NIR) is getting increasingly important for applications such as machine vision or medical imaging. NIR-to-visible optical upconverters consist of a monolithic stack of a NIR photodetector and a visible light-emitting unit. Suc ...

AMER CHEMICAL SOC2019