Publications de Olatz Arriaga Arruti

A comprehensive physical model for the sensitivity of silicon heterojunction photovoltaic modules to water ingress

Christophe Ballif, Alessandro Francesco Aldo Virtuani, Luca Gnocchi, Olatz Arriaga Arruti

Silicon heterojunction (SHJ)-solar modules-when encapsulated with ethylene vinyl acetate (EVA)-are known to be extremely sensitive to water ingress. The reason for this is, however, not clear. Here, we explain the root causes of this degradation mechanism ...

Cell Press2024

Development of Pid-resistant Silicon Heterojunction Solar Cells

Christophe Ballif, Alessandro Francesco Aldo Virtuani, Olatz Arriaga Arruti

In this abstract, we focus on reinforcing silicon heterojunction (SHJ) solar cells against degradation mechanisms induced by moisture and high-negative voltages. In order to verify that, the solar cells are encapsulated in a glass/backsheet (G/BS) module s ...

Institute of Electrical and Electronics Engineers2024

Long-term performance and reliability of silicon heterojunction solar modules

Christophe Ballif, Alessandro Francesco Aldo Virtuani, Olatz Arriaga Arruti

The high-efficiency silicon heterojunction (SHJ) technology is now perceived mature enough to enter the Giga-Watt manufacturing scale with several players around the globe. The growth of the SHJ technology requires confidence from manufacturers, investors, ...

2023

Investigation and Mitigation of Moisture- and Potential-Induced Degradation Mechanisms of Silicon Heterojunction Solar Cells and Modules

Olatz Arriaga Arruti

Photovoltaic (PV) technology is one of the most promising renewable energy sources. The PV market is dominated by crystalline silicon (c-Si) based technologies, thus ensuring their long-term performance is of paramount importance for manufacturers, investo ...

EPFL2023

Potential-induced degradation in bifacial silicon heterojunction solar modules: Insights and mitigation strategies

Christophe Ballif, Quentin Thomas Jeangros, Alessandro Francesco Aldo Virtuani, Luca Gnocchi, Olatz Arriaga Arruti

Potential-induced degradation (PID) may be a serious concern in photovoltaic (PV) modules and plants, particularly when approaching high system voltages (1500+ V). Here, we investigate PID occurring in bifacial rear-emitter silicon heterojunction (SHJ) sol ...

Wiley2023

The Front and Rear Side Contributions to the Potential Induced Degradation of Bifacial Silicon Heterojunction Solar Modules

Christophe Ballif, Alessandro Francesco Aldo Virtuani, Luca Gnocchi, Olatz Arriaga Arruti, Fabiana Lisco

38th European Photovoltaic Solar Energy Conference and Exhibition; 573-577 Recent studies showed that silicon heterojunction (SHJ) solar cells may be prone to potential induced degradation (PID), when encapsulated with a low volume resistivity ethylene vin ...

WIP2021

Potential Induced Degradation Mechanism in Rear-Emitter Bifacial Silicon Heterojunction Solar Cells Encapsulated in Different Module Structures

Christophe Ballif, Quentin Thomas Jeangros, Alessandro Francesco Aldo Virtuani, Luca Gnocchi, Olatz Arriaga Arruti

Recent studies showed that silicon heterojunction (SHJ) solar cells can be prone to potential induced degradation (PID) when encapsulated with ethylene vinyl acetate (EVA). Here, to gain understanding in the role of EVA, we perform PID test in humid condit ...

IEEE2021