Mesoscopic sensitized solar cells are one of the most promising third-generation photovoltaic technologies. Dye-sensitized solar cells (DSCs), imitating the photosynthesis of green plants, were the first photovoltaic devices to utilize a mesoscopic heterojunction for the conversion of solar irradiation into electrical power. Solid-state dye-sensitized solar cells (ssDSCs), that employ an organic hole-transporting material in place of a liquid redox electrolyte, have evolved as viable contenders to conventional liquid DSCs. A typical ssDSC is composed of a mesostructured wide-bandgap metal oxide semiconductor that is sensitized with a light-absorbing chromophore and infiltrated with a molecular organic hole-transporter, usually by solution-processing. In this device, photoexcitation of the sensitizer and subsequent ultrafast electron injection into the conduction band of the metal oxide semiconductor is followed by hole transfer from the oxidized sensitizer to the organic hole-transporter. Charge transport of both the electron and the hole through the two bicontinuous phases, followed by charge migration through the external circuit, completes the photovoltaic operation of the cell. Despite more than 15 years of development, ssDSCs have always been lagging behind their liquid counterparts in terms of both power conversion efficiency and long-term stability. My thesis presents three different approaches that are aimed at contributing to the development of high-performance solid-state mesoscopic solar cells. Firstly, I present a new class of Co(III) complexes as solution-processable p-type dopants for triarylamine-based hole-conductors such as the commonly employed 2,2’,7,7’-tetrakis-N,N-di-para-methoxyphenylamine-9,9’-spirobifluorene (spiro-MeOTAD). The proposed Co(III) complexes were characterized in detail using optical and electrochemical techniques. The application of the new p-dopants in ssDSC rendered it possible to directly relate the conductivity of the doped hole-transporter to the photovoltaic performance of the devices. The work shows that chemical p-doping is a powerful tool to control the charge transport properties of spiro-MeOTAD in ssDSCs, capable of replacing the commonly employed photo-doping, i.e. the light-assisted one-electron oxidation of spiro-MeOTAD by ambient oxygen. Combining this strategy with a state–of–the–art organic D–π–A sensitizer allowed us to achieve power conversion efficiencies of up to 7.2%—a new record for this kind of device architecture. Secondly, I investigated a series of new molecular hole-transporters based on the triarylamine-substituted 9,9’-spirobifluorene core. In total, we synthesized seven new materials and characterized them in detail using electrical and electrochemical techniques. Organic-field effect transistors were fabricated employing these materials in order to evaluate their hole mobilities. From the comparison of different substituents on the hole-conducting triarylamine moieties, a struc
Mohammad Khaja Nazeeruddin, Peng Gao, Paramaguru Ganesan
Michael Graetzel, Shaik Mohammed Zakeeruddin, Peng Wang, Felix Thomas Eickemeyer, Ming Ren