Publications associées à Intrinsic edge excitons in two-dimensional MoS2

Gate Control of Spin-Layer-Locking FETs and Application to Monolayer LuIO

Nicola Marzari, Antimo Marrazzo, Thibault Daniel Pierre Sohier, Rong Zhang

A recent 2D spinFET concept proposes to switch electrostatically between two separate sublayers with strong and opposite intrinsic Rashba effects, exploiting the spin-layer-locking mechanism in centrosymmetric materials with local dipole fields. Here, we p ...

AMER CHEMICAL SOC2021

Semiconducting van der Waals Interfaces as Artificial Semiconductors

Helmuth Berger, Evgeniy Ponomarev

Recent technical progress demonstrates the possibility of stacking together virtually any combination of atomically thin crystals of van der Waals bonded compounds to form new types of heterostructures and interfaces. As a result, there is the need to unde ...

2018

Field-induced charge separation dynamics in monolayer MoS2

Andras Kis, Dragan Mihailovic, Dmitry Ovchinnikov, Dumitru Dumcenco, Yen-Cheng Kung, Daniele Vella

The absorption spectra of 2D semiconductors are dominated by excitons with binding energy of several hundreds of meV. Nevertheless, even single layers show an appreciable photovoltaic effect and work as the active material in high sensitivity photodetector ...

Iop Publishing Ltd2017

First-principles study of H adsorption on graphene/SiC(0001)

Alfredo Pasquarello, Gabriele Sclauzero

The adsorption of atomic H above the carbon buffer layer in the graphene/SiC(0001) interface system is investigated within density functional theory through a set of realistic interface models that do not impose large artificial strains on the graphene. We ...

Wiley-Blackwell2013

Interface Investigations on Titanium Nitride Bilayer Systems

Dominik Anwar Jaeger

Nanocomposite coatings composed of two phases with atomically sharp phase boundaries, show interesting mechanical properties. These properties are often originating from their high interface to volume ratio. Composites of nanocrystalline titanium nitride ( ...

EPFL2012

Low-strain interface models for epitaxial graphene on SiC(0001)

Alfredo Pasquarello, Gabriele Sclauzero

A set of low-strain commensurate interface structures for epitaxial graphene on SiC(0001) are obtained by combining rotated graphene supercells with m x m or m root 3 x m root 3R30 degrees SiC cells. For two among the interfaces with lowest strain, corresp ...

Elsevier2012