Publications associées à Bi-stability of contact angle and its role in tuning the morphology of self-assisted GaAs nanowires

Plasmonic Nanostructures for Photocatalysis: Material, Photonic and Electronic Effects

Plasmonic photochemistry has a large potential to replace energy-intensive chemical processes with low-temperature, low-pressure light-driven chemical reactions. Plasmonic nanostructures have emerged as promising photocatalysts with exceptional and tunable ...

EPFL2024

Semiconductor-based device architectures in multimaterial fibers

William Nicolas Duncan Esposito

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

EPFL2023

Controlled filamentation instability as a scalable fabrication approach to flexible metamaterials

Fabien Sorin, Louis Marie Philippe Martin-Monier, Pierre-Luc Eloi Piveteau, William Nicolas Duncan Esposito

Long and flexible arrays of nanowires find impactful applications in sensing, photonics, and energy harvesting. Conventional manufacturing relies largely on lithographic methods limited in wafer size, rigidity, and machine write time. Here, we report a sca ...

Nature Portfolio2022

Nanopillars Enabling III-V Integration on Si (100) and (111)

Lucas Güniat

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

EPFL2021

Crystalline Order in Compound Semiconductors in Nanoscale Structures and Thin Films

Mahdi Zamani

Semiconductors materials and devices are essential building blocks for many of the technologies deeply embedded in modern life. Improving the performance of semiconductor devices requires a deeper understanding of the fundamental mechanisms controlling the ...

EPFL2021

Increasing Functionality of III-V Nanowires on Silicon Substrates

Wonjong Kim

Progress in nanotechnology, including fabrication and characterization tools, opened up the unprecedented low dimensional materials era, where we can manipulate and structure matter on a size scale that we could not reach before. Due to many interesting pr ...

EPFL2020

Silicon Nanowire Arrays Coated with Ag and Au Dendrites for Surface-Enhanced Raman Scattering

Siarhei Zavatski

Silicon nanowires (SiNWs) were comprehensively characterized in dependence on conditions of their formation via metal (Ag) -assisted chemical etching (MACE) of monocrystalline Si. The Ag structures remained on/between SiNWs based on both n- and p-Si were f ...

2020

In-situ reflectometry to monitor locally-catalyzed initiation and growth of nanowire assemblies

Anna Fontcuberta i Morral

We investigate in-situ laser reflectometry for measuring the axial growth rate in chemical vapor deposition of assemblies of well-aligned vertical germanium nanowires grown epitaxially on single crystal substrates. Finite difference frequency domain optica ...

IOP PUBLISHING LTD2020

Geometrical optimisation of core-shell nanowire arrays for enhanced absorption in thin crystalline silicon heterojunction solar cells

Andrea Ingenito

Background: Elongated nanostructures, such as nanowires, have attracted significant attention for application in silicon-based solar cells. The high aspect ratio and characteristic radial junction configuration can lead to higher device performance, by inc ...

Beilstein Institut2019

High-temperature annealing effects on molybdenum-silicon contact substrate for vertically structured silicon quantum-dot solar cells

Chien-Jen Yang

This paper studies the applicability of sputtered Molybdenum (Mo) thin films on silicon wafers (Mo-Si) to act as contact substrates for vertically structured Si quantum-dot (QD) solar cells. The compatibility of Mo-Si contact substrate with Si QD material ...

2019

Template-assisted grown III-V semiconductor nanowires: A transmission electron microscopy study

Nicolas Bologna

III-V semiconductor nanowires are, due to their unique properties, one of the most promising nanostructures developed in the last decades. However, the realization of commercial devices made of III-V nanowires, such as transistors and solar cells, has not ...

EPFL2019

The growth and optical properties of III-V nanostructures grown by Molecular Beam Epitaxy

Gözde Tütüncüoglu

This thesis is dedicated to the growth and characterization of the optoelectronic properties of III-V semiconductor nanostructures namely nanowires and nanoscale membranes. III-V semiconductors possess promising intrinsic properties like direct band gap, h ...

EPFL2017

Growth of GaAs nanowires on Si (111) for photovoltaic applications

Federico Matteini

The goal of this thesis is to master the synthesis of GaAs nanowires ensembles on Si for their application in solar cells. Semiconductor nanowires present promising characteristics for photovoltaic applications: they benefit from their longitudinal high as ...

EPFL2016

Wetting of Ga on SiOx and Its Impact on GaAs Nanowire Growth

Gözde Tütüncüoglu, Federico Matteini, Fauzia Jabeen, Heidi Andrea Potts

Ga-assisted growth of GaAs nanowires on silicon provides a path for integrating high-purity III-Vs on silicon. The nature of the oxide on the silicon surface has been shown to impact the overall possibility of nanowire growth and their orientation with the ...

American Chemical Society2015

High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga

Anna Fontcuberta i Morral, Anna Dalmau Mallorquí, Gözde Tütüncüoglu, Sonia Conesa Boj, Eleonora Russo, Federico Matteini, Jelena Vukajlovic Plestina, Heidi Andrea Potts

GaAs nanowire arrays on Silicon offer great perspectives in the :optoeleetronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nano-wires in the form of array ...

American Chemical Society2015

Efficient Multiterminal Spectrum Splitting via a Nanowire Array Solar Cell

Anna Fontcuberta i Morral, Esther Alarcon Llado

Nanowire-based solar cells opened a new avenue for increasing conversion efficiency and rationalizing material use by growing different III-V materials on silicon substrates. Here, we propose a multiterminal nanowire solar cell design with a theoretical co ...

Amer Chemical Soc2015

Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Esther Alarcon Llado, Federico Matteini

Physical properties of surfaces are extremely important for initiation and nucleation of crystal growth, including nanowires. In recent years, fluctuations in surface characteristics have often been related to unreproducible growth of GaAs nanowires on Si ...

Elsevier2014

Passivation of ZnO Nanowire Guests and 3D Inverse Opal Host Photoanodes for Dye-Sensitized Solar Cells

Michael Graetzel, Mohammad Khaja Nazeeruddin, Nicolas Tétreault, Aravind Kumar Chandiran, Thomas Moehl, Hauke Arne Harms, Philippe Pierre Labouchère

A hierarchical host-guest nanostructured photoanode is reported for dye-sensitized solar cells. It is composed of ZnO nanowires grown in situ into the macropores of a 3D ZnO inverse opal structure, which acts both as a seed layer and as a conductive backbo ...

Wiley-VCH Verlag Berlin2014

III-V nanowire arrays: growth and light interaction

Anna Fontcuberta i Morral, Martin Heiss, Anna Dalmau Mallorquí, Gözde Tütüncüoglu, Sonia Conesa Boj, Esther Alarcon Llado, Eleonora Russo, Federico Matteini

Semiconductor nanowire arrays are reproducible and rational platforms for the realization of high performing designs of light emitting diodes and photovoltaic devices. In this paper we present an overview of the growth challenges of III-V nanowire arrays o ...

Institute of Physics2014

Self-assembled quantum dots in a nanowire system for quantum photonics

Marco Cantoni, Yannik Fontana, Anna Fontcuberta i Morral, Martin Heiss, Bernt Ketterer, Sonia Conesa Boj, Eleonora Russo, Nicola Marzari

Quantum dots embedded within nanowires represent one of the most promising technologies for applications in quantum photonics. Whereas the top-down fabrication of such structures remains a technological challenge, their bottom-up fabrication through self-a ...

Nature Publishing Group2013