Publications associées à Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

EPFL2024

Plasmonic Nanostructures for Photocatalysis: Material, Photonic and Electronic Effects

Fateme Kiani Shahvandi

Plasmonic photochemistry has a large potential to replace energy-intensive chemical processes with low-temperature, low-pressure light-driven chemical reactions. Plasmonic nanostructures have emerged as promising photocatalysts with exceptional and tunable ...

EPFL2024

Semiconductor-based device architectures in multimaterial fibers

William Nicolas Duncan Esposito

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

EPFL2023

Scalable Approaches to III-V Nanowires for Photodetection

Nicholas Paul Morgan

III-V semiconductor nanowires have unique properties that make them ideal for advanced photodetectors on inexpensive substrates. For example, they exhibit enhanced or polarization-dependent light absorption, they can form complex heterostructures, and thei ...

EPFL2023

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Alok Rudra, Anna Fontcuberta i Morral, Nicholas Paul Morgan, Marie Sophie Sanglé-Ferrière, Didem Dede, Valerio Piazza, Ann-Kristin Stief, Vladimir Dubrovskii

We outline the growth mechanismand shape evolution of GaAsnanoridges by selective area MOVPE with three well-identified, distinctstages of growth. ...

AMER CHEMICAL SOC2023

In-situ atomic level observation of the strain response of graphene lattice

Klaus Kern, Jz -Yuan Juo

Strain is inevitable in two-dimensional (2D) materials, regardless of whether the film is suspended or supported. However, the direct measurement of strain response at the atomic scale is challenging due to the difficulties of maintaining both flexibility ...

Nature Portfolio2023

Sinter-Resistant Nickel Catalyst for Lignin Hydrogenolysis Achieved by Liquid Phase Atomic Layer Deposition of Alumina

Jeremy Luterbacher, Farzaneh Talebkeikhah, Songlan Sun

Lignin hydrogenolysis is a key step in the sustainable production of renewable bio-based chemicals and fuels. Heterogeneous metal catalysts have led to high yields but they rapidly deactivate, notably due to nanoparticle sintering and carbonaceous deposit ...

2023

Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks

Alok Rudra, Anna Fontcuberta i Morral, Nicholas Paul Morgan, Andrea Giunto, Santhanu Panikar Ramanandan

Holes in germanium nanowires have emerged as a realistic platform for quantum computing based on spin qubit logic. On top of the large spin–orbit coupling that allows fast qubit operation, nanowire geometry and orientation can be tuned to cancel out charge ...

American Chemical Society (ACS)2022

Controlled filamentation instability as a scalable fabrication approach to flexible metamaterials

Fabien Sorin, Louis Marie Philippe Martin-Monier, Pierre-Luc Eloi Piveteau, William Nicolas Duncan Esposito

Long and flexible arrays of nanowires find impactful applications in sensing, photonics, and energy harvesting. Conventional manufacturing relies largely on lithographic methods limited in wafer size, rigidity, and machine write time. Here, we report a sca ...

Nature Portfolio2022

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

Elison de Nazareth Matioli, Alessandro Floriduz

In this note, we demonstrate direct high-temperature growth of single-crystalline GaN on c-plane ScAlMgO4 substrates by metalorganic chemical vapor deposition, without using low-temperature buffers. We found that a trimethylaluminium preflow was crucial to ...

IOP Publishing Ltd2022

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Anna Fontcuberta i Morral, Lucas Güniat, Martin George Friedl, Nicholas Paul Morgan, Akshay Balgarkashi, Didem Dede, Elif Nur Dayi, Valerio Piazza, Vladimir Dubrovskii

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

IOP Publishing Ltd2022

Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Mirjana Dimitrievska

Growth approaches that limit the interface area between layers to nanoscale regions are emerging as a promising pathway to limit the interface defect formation due to mismatching lattice parameters or thermal expansion coefficient. Interfacial defect mitig ...

AMER CHEMICAL SOC2022

Monocrystalline 1.7-eV MgCdTe solar cells

Mathieu Gérard Boccard

Monocrystalline 1.7 eV Mg0.13Cd0.87Te/MgxCd1-xTe (x > 0.13) double heterostructure (DH) solar cells with varying Mg compositions in the barrier layers are grown by molecular beam epitaxy. A Mg0.13Cd0.87Te/Mg0.37Cd0.63Te DH solar cell featuring abrupt inter ...

AIP Publishing2022

Doping challenges and pathways to industrial scalability of III–V nanowire arrays

Anna Fontcuberta i Morral, Lucas Güniat, Wonjong Kim, Valerio Piazza

Semiconductor nanowires (NWs) have been investigated for decades, but their application into commercial products is still difficult to achieve, with triggering causes related to the fabrication cost and structure complexity. Dopant control at the nanoscale ...

2021

Nanopillars Enabling III-V Integration on Si (100) and (111)

Lucas Güniat

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

EPFL2021

van der Waals Epitaxy of Co10–xZn10–yMnx+y Thin Films: Chemical Composition Engineering and Magnetic Properties

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Dirk Grundler, Ping Che, Simon Robert Escobar Steinvall, Andrea Mucchietto, Rajrupa Paul, Mohammad Hamdi

Topologically protected magnetic skyrmions have raised interest for future spintronics applications. One of the main challenges is the synthesis of room temperature skyrmion-hosting materials that are compatible with thin-film technology. We present an app ...

2021

Directed evolution of DNA-wrapped single-walled carbon nanotube complexes for optical sensing

Benjamin Paul Johanès Gabriel Lambert

Single-walled carbon nanotubes (SWCNTs) have garnered significant interest for their applications in optical biosensing. SWCNTs exhibit a sensitive and photostable fluorescence in the near-infrared (NIR) range, allowing for the continuous monitoring of tar ...

EPFL2021

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

Crystalline Order in Compound Semiconductors in Nanoscale Structures and Thin Films

Mahdi Zamani

Semiconductors materials and devices are essential building blocks for many of the technologies deeply embedded in modern life. Improving the performance of semiconductor devices requires a deeper understanding of the fundamental mechanisms controlling the ...

EPFL2021

Increasing Functionality of III-V Nanowires on Silicon Substrates

Wonjong Kim

Progress in nanotechnology, including fabrication and characterization tools, opened up the unprecedented low dimensional materials era, where we can manipulate and structure matter on a size scale that we could not reach before. Due to many interesting pr ...

EPFL2020