Publication
Since the early 1960s, alloys are commonly grouped into two classes that feature either bound states in the band gap (I) or additional, nondiscrete band states (II). Consequently, one can observe either excitons bound to isoelectronic impurities or the typical band edge emission of a semiconductor that shifts and broadens with rising isoelectronic doping concentration. Microscopic parameters for class I alloys can directly be extracted from photoluminescence (PL) spectra, whereas any conclusions drawn for class II alloys usually remain limited to macroscopic assertions. Nonetheless, we present a spectroscopic study on exciton localization in a mixed-crystal alloy (class II) that allows us to access microscopic alloy parameters. In order to illustrate our approach, we study bulk InxGa1-xN epilayers at the onset of alloying (0