Publications associées à Characterization and Modeling of Mismatch in Cryo-CMOS

Magneto-Thermoelectric Transport in Graphene Quantum Dot with Strong Correlations

Disorder at etched edges of graphene quantum dots (GQD) enables random all-to-all interactions between localized charges in partially filled Landau levels, providing a potential platform to realize the Sachdev-Ye-Kitaev (SYK) model. We use quantum Hall edg ...

2024

Piezoelectric Properties of BiFeO3 Exposed to High Temperatures

Dragan Damjanovic, Xiaolong Li

BiFeO3 is a ferroelectric with a Curie temperature of 830 C-degrees, however, its piezoelectric performance at high temperature remains unclear. The current work reveals a disappearance/recovery of piezoelectricity in BiFeO3 at elevated temperature and upo ...

Wiley-V C H Verlag Gmbh2024

Thermal sensing device and sensory feedback system and method using such thermal sensing device

Solaiman Shokur, Silvestro Micera, Jonathan Louis Muheim, Outman Akouissi, Francesco Iberite

The present invention concerns a thermal sensing device (1) and a sensory feedback system and method using such thermal sensing device, comprising at least one film (19) of electrically insulating polymer defining a global surface of the thermal sensing de ...

2024

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Zhenyu Wang

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Pyroresistive response of percolating conductive polymer composites

Claudio Grimaldi

The pyroresistive response of conductive polymer composites (CPCs) has attracted much interest because of its potential applications in many electronic devices requiring a significant responsiveness to changes in external physical parameters such as temper ...

Amer Physical Soc2024

A novel fatigue life prediction methodology based on energy dissipation in viscoelastic materials, synergistic effects of stress level, stress ratio, and temperature

Thomas Keller, Abdolvahid Movahedirad, Lulu Liu

This work introduces a new methodology to predict the fatigue life of viscoelastic materials by considering the creep effect on fatigue behavior under the concurrent effects of stress level, stress ratio, and temperature. The model established based on the ...

2024

Is the powersave governor really saving power?

David Atienza Alonso, Luis Maria Costero Valero, Darong Huang

A frequency scaling governor is critical for the performance management of cloud servers, as it enhances energy efficiency and helps to control operational temperatures, thereby ensuring system reliability. However, our in-depth analysis of the application ...

2024

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Utku Karaca

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

Local vs. cooperative: Unraveling glass transition mechanisms with SEER

Matthieu Wyart, Wencheng Ji

Which phenomenon slows down the dynamics in supercooled liquids and turns them into glasses is a long-standing question of condensed matter. Most popular theories posit that as the temperature decreases, many events must occur in a coordinated fashion on a ...

National Academy of Sciences2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Claudio Bruschini, Edoardo Charbon, Francesco Gramuglia, Myung Jae Lee, Ekin Kizilkan, Pouyan Keshavarzian, Won Yong Ha

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Drazen Dujic

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

2024

Design for demise applied to spacecraft structural panels and experiments for ClearSpace One platform

Alexandre Achille Looten

With growing awareness of the vulnerability of the near-Earth space region and the anticipated surge in satellite objects, efforts are underway to assess and implement various mitigation strategies. These aim to minimize the impact of space activities and ...

EPFL2024

Correlating long-term performance and aging behaviour of building integrated PV modules

Christophe Ballif, Alessandro Francesco Aldo Virtuani, Ebrar Özkalay

Because building-integrated photovoltaic (BIPV) modules are fully integrated into a building envelope, the back of the module can be exposed to little or no ventilation, resulting in increased operating temperatures. As the temperature increases, the perfo ...

Elsevier Science Sa2024

Performance of energy piles foundation in hot-dominated climate: A case study in Dubai

Lyesse Laloui, Elena Ravera, Sofie Elaine ten Bosch

Energy piles represent an innovative technology that can help provide sustainable geothermal heating or cooling energy for thermal conditioning purposes. In hot-dominated climates, the interest is to inject heat in the ground and extract energy for space-c ...

Pergamon-Elsevier Science Ltd2024

Experimental study of stability, quench propagation and detection methods on 15 kA sub-scale HTS fusion conductors in SULTAN

Pierluigi Bruzzone, Kamil Sedlák, Nikolay Bykovskiy, Ortensia Dicuonzo

High-temperature superconductors (HTSs) enable exclusive operating conditions for fusion magnets, boosting their performance up to 20 T generated magnetic fields in the temperature range from 4 K to 20 K. One of the main technological issues of HTS conduct ...

2023

Scaling Description of Dynamical Heterogeneity and Avalanches of Relaxation in Glass-Forming Liquids

Ali Tahaei, Matthieu Wyart

We provide a theoretical description of dynamical heterogeneities in glass-forming liquids, based on the premise that relaxation occurs via local rearrangements coupled by elasticity. In our framework, the growth of the dynamical correlation length e and o ...

American Physical Society2023

On double-descent in uncertainty quantification in overparametrized models

Florent Gérard Krzakala, Lenka Zdeborová, Bruno Loureiro, Lucas Andry Clarte, Bruno Loureiro

Uncertainty quantification is a central challenge in reliable and trustworthy machine learning. Naive measures such as last-layer scores are well-known to yield overconfident estimates in the context of overparametrized neural networks. Several methods, ra ...

PMLR Proceedings of Machine Learning Research2023

Evaluating, Exploiting, and Hiding Power Side-Channel Leakage of Remote FPGAs

Ognjen Glamocanin

The pervasive adoption of field-programmable gate arrays (FPGAs) in both cyber-physical systems and the cloud has raised many security issues. Being integrated circuits, FPGAs are susceptible to fault and power side-channel attacks, which require physical ...

EPFL2023

Humidity-insensitive optical fibers for distributed sensing applications

Luc Thévenaz, Tiago Filipe Pimentel Das Neves

Humidity is a critical environmental factor in various applications, and its temperature dependence must be considered when developing thermo-hygrometer fiber sensors. The optical fibers that constitute the sensor must have a temperature reference, which s ...

2023

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

EPFL2023