Publications associées à Quantum cascade laser-based Kerr frequency comb generation

Low-noise frequency-agile photonic integrated lasers for coherent ranging

Rui Ning Wang, Tobias Kippenberg, Junqiu Liu, Wenle Weng, Andrey Voloshin, Jijun He, Anat Siddharth, Viacheslav Snigirev, Vladimir Shadymov

Stable and tunable integrated lasers are fundamental building blocks for applications from spectroscopy to imaging and communication. Here the authors present a narrow linewidth hybrid photonic integrated laser with low frequency noise and fast linear wave ...

Nature Portfolio2022

Thermal Modelling and Experimental Validation in the Perspective of Tool Steel Laser Polishing

Alexandre Masserey, Eric Boillat, Bastian Meylan

Laser polishing (LP) is a process that allows a significant reduction of the surface roughness of a metal workpiece via re-melting a shallow layer of material. However, the practical use of LP is limited due to the difficulty of satisfying the high surface ...

MDPI2022

Integrated gallium phosphide nonlinear photonics

Tobias Kippenberg, Dalziel Joseph Wilson, Miles Henry Anderson

Gallium phosphide (GaP) is an indirect-bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties-including large chi ((2)) and chi ((3)) coefficients, a high refractive index (>3) and transparency from visibl ...

Nature Publishing Group2020

Erbium doped random fiber laser and fiber mixing effect

Luc Thévenaz, Camille Sophie Brès, Can Yao

We demonstrate an active random fiber laser by directly pumping a 100 m erbium-doped fiber at 980 nm wavelength, with a fiber loop mirror forming a half-open cavity. Random lasing with competing spectral modes in the range from 1535 nm to 1560 nm is achiev ...

2017

High-power flip-chip semiconductor disk laser in the 1.3 μm wavelength band

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta

We present 6.1 W of output power from a flip-chip semiconductor disk laser (SDL) emitting in the 1.3 mu m wavelength region. This is the first demonstration of a flip-chip SDL in this wavelength range with output powers that are comparable to those obtaine ...

Optical Soc Amer2014

Dilute-Nitride Low-Dimensional Nanostructures Formed on Non-Planar Substrates

Romain Carron

The properties of semiconductors heterostructures of nanoscopic dimensions change from that of bulk material according to the rules of quantum mechanics. The planar quantum wells (QWs) are widely used in various diode and laser devices thanks to the relati ...

EPFL2013

High-power optically-pumped VECSELs emitting in the 1310-nm and 1550-nm wavebands

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman, Qing Zhu, Nicolas Volet

1300-nm, 1550-nm and 1480-nm wavelength, optically-pumped VECSELs based on wafer-fused InAlGaAs/InPAlGaAs/GaAs gain mirrors with intra-cavity diamond heat-spreaders demonstrate very low thermal impedance of 4 K/W. Maximum CW output of devices with5 groups ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2011

Tuning optical modes in slab photonic crystal by atomic layer deposition and laser-assisted oxidation

Laurent Balet

The authors experimentally investigate the effects of atomic layer deposition (ALD) and laser-assisted oxidation on the optical modes in GaAs L3 photonic crystal air-bridge cavities, using layers of InAs quantum dots as internal light source. Four distinct ...

2011

Dynamics of quantum dot lasers

Pablo Moreno

The exceptional performance of self-assembled Quantum Dot (QD) materials renders them extremely appealing for their use as optical communications devices. As lasers, they feature reduced and temperature independent threshold current and proper emission wav ...

EPFL2008

Realization and study of InAs/GaAs quantum dot superluminescent diodes emitting at 1.3µm

Marco Rossetti

A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...

EPFL2007

Lattice-matched AlInN alloys for nitride-based optoelectronic devices

Julien Dorsaz

Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...

EPFL2006

Optical properties of In(Ga)As/GaAs quantum dot-based devices emitting at 1.3[mu]m

Self-assembled quantum-dots (QDs) represent a distributed ensemble of zero dimensional structures with a near-singular density of states. Implemented as the active medium in a diode laser their unique properties lead to improved and often novel characteris ...

EPFL2004