Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03 <= x <= 0.23)

Compared to the AlGaN alloy, which can only be grown under tensile strain on GaN, the AlInN alloy is predicted by Vegard's law to be lattice-matched (LM) on fully relaxed GaN templates for an indium content of similar to 17.5%, i.e., it can be grown either tensely or compressively on GaN. The effect of strain on the polarization induced sheet charge density at the Al1-xInxN/AlN/GaN heterointerfaces is carefully investigated for 6 and 14 nm thick AlInN barriers including a 1 nm thick AlN interlayer. The barrier indium content ranges at 0.03