Publications associées à Physics and applications of charged domain walls

Hydrogen-induced tunable remanent polarization in a perovskite nickelate

Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor doping, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an ...

Nature Portfolio2024

Tailor-made Piezoelectric Elastomer Materials

Francis Owusu

Recent advancements in miniature devices with higher computational capabilities and ultralow power consumption have accelerated the development of wearable sensors, actuators, and energy harvesters everywhere. The ultimate aim of such a technological revol ...

EPFL2023

Dataset for "Low-temperature processing of screen-printed piezoelectric KNbO3 with integration onto biodegradable paper substrates"

Luis Guillermo Villanueva Torrijo, Danick Briand, Morgan Mc Kay Monroe

This data set contains the data collected during the FNS project Green Piezo (Grant no. 179064) in association with the recent publication entitled “Low-temperature processing of screen-printed piezoelectric KNbO3 with integration onto biodegradable paper ...

Zenodo2023

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

EPFL2023

Domain Imaging and Switching Dynamics in BaTiO3-Based Photonic Integrated Devices

Jacqueline Geler Kremer

Keeping up with our constantly connected lifestyle of instant messages and video streaming has its repercussions. Data centers have been gobbling up resources becoming a significant share of the energy used worldwide. To keep up with demand and curb the en ...

EPFL2023

Low-temperature processing of screen-printed piezoelectric KNbO3 with integration onto biodegradable paper substrates

Luis Guillermo Villanueva Torrijo, Danick Briand, Morgan Mc Kay Monroe

The development of fully solution-processed, biodegradable piezoelectrics is a critical step in the development of green electronics towards the worldwide reduction of harmful electronic waste. However, recent printing processes for piezoelectrics are hind ...

2023

Ferroelectric device or structure and a method for producing ferroelectric devices or structures

Rui Ning Wang, Tobias Kippenberg, Zelin Tan

The present invention concerns a method for producing at least one ferroelectric device or structure comprising the steps of providing at least one ferroelectric material or layer, or providing at least one ferroelectric material or layer to be patterned o ...

2023

On-Demand Cross-Linkable Bottlebrush Polymers for Voltage- Driven Artificial Muscles

Frank Nüesch, Francis Owusu, Yeerlan Adeli

Dielectric elastomer actuators (DEAs) generate motion resembling natural muscles in reliability, adaptability, elongation, and frequency of operation. They are highly attractive in implantable soft robots or artificial organs. However, many applications of ...

AMER CHEMICAL SOC2023

Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse

Igor Stolichnov, Mihai Adrian Ionescu, Ali Saeidi, Matteo Cavalieri, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

In this work, we report the concept and experimentally demonstrate the first tunable ferroelectric (Fe) junctionless (JL) transistor (Fe-JLFET), capable of emulating the functionality of biological tri-partite synapses, which is an artificial three-termina ...

Institute of Electrical and Electronics Engineers2023

Charging and Electric Field Effects on Hydrogen Molecules Physisorbed on Graphene

Klaus Kern, Shai Mangel, Alessio Scavuzzo, Tobias Wollandt

Molecular hydrogen adsorbed on graphene was investigated by analyzing rotational excitation spectra obtained with a gate-tunable scanning tunneling microscope (STM). Through the shift of the rotational excitation energy, the tunability of physisorbed H2 on ...

AMER CHEMICAL SOC2023

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

Igor Stolichnov, Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando, Matteo Cavalieri, Eamon Patrick O'Connor, Carlotta Gastaldi

In this work, we experimentally explore and compare FET gate stacks with and without an inner metal plane between a linear dielectric (SiO2) and a ferroelectric layer (Si-doped HfO2) operating in the negative capacitance (NC) regime. The use of nanosecond- ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Effects of surface rigidity and metallicity on dielectric properties and ion interactions at aqueous hydrophobic interfaces

Philip Robin Loche

Using classical molecular dynamics simulations, we investigate the dielectric properties at interfaces of water with graphene, graphite, hexane, and water vapor. For graphite, we compare metallic and nonmetallic versions. At the vapor-liquid water and hexa ...

AIP Publishing2022

Nonlinear electro-mechanical coupling and thermally stimulated currents in relaxor ferroelectrics

Lukas Riemer

In this work, the emergence of polarization and electro-mechanical coupling in Pb(Mg1/3Nb2/3)O3 and Pb(Mg1/3Nb2/3)O3 â PbTiO3 was investigated by means of thermally stimulated current, and nonlinear dielectric and electro-mechanical measurements. The pre ...

EPFL2022

Stress effects on the impedance and ferroelectricity of PVDF-BiFeO3-MWCNT films using xanthan gum as dispersant

Frank Nüesch, Francis Owusu

Composite films based on dispersions of bismuth ferrite (BiFeO3) in polyvinylidene fluoride (PVDF) matrixes were prepared in the presence of multiwalled-carbon-nanotubes (MWCNT), using xanthan gum (XG) as dispersant. Films were prepared by spin coating and ...

ELSEVIER SCIENCE SA2022

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Carlotta Gastaldi

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

EPFL2022

Recent Advances in Piezoelectric Materials for Electromechanical Transducer Applications

Dragan Damjanovic

Ferroelectricity has made a huge impact on science and technology since Joseph Valasek (then a Ph.D. student at the University of Minnesota) discovered it in 1920, a little longer than 100 years ago. Whereas Dr. Valasek's original research was motivated by ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

A Generalized Phase-Shift PWM Extension for Improved Natural and Active Balancing of Flying Capacitor Multilevel Inverters

Elison de Nazareth Matioli, Georgios Kampitsis

The emergence of wide bandgap power devices has brought the attention back to the flying capacitor (FC) multilevel inverters with a large number of stages, in an effort to increase the power density by minimizing the passive components. The main challenge ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Giant switchable non thermally-activated conduction in 180 degrees domain walls in tetragonal Pb(Zr,Ti)O-3

Igor Stolichnov, Mihai Adrian Ionescu, Felix Risch

Conductive domain walls in ferroelectrics offer a promising concept of nanoelectronic circuits with 2D domain-wall channels playing roles of memristors or synoptic interconnections. However, domain wall conduction remains challenging to control and pA-rang ...

Nature Portfolio2022

Nanoscale modelling of ionic transport in the porous C-S-H network

Khalil Ferjaoui

To reduce the CO2 footprint of construction materials, concrete producers blend their cement with Supplementary Cementitious Materials (SCMs). SCMs such as fly ash or blast furnace slag are mostly the byproducts of other industries. And while SCMs are chos ...

EPFL2022

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Igor Stolichnov, Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri, Eamon Patrick O'Connor, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021