Publications associées à New Developments in Amorphous Silicon Based Microchannel Plates

Nanostructure and Optical Property Tailoring of Zinc Tin Nitride Thin Films through Phenomenological Decoupling: A Pathway to Enhanced Control

Aïcha Hessler-Wyser, Johann Michler, Amit Sharma, Daniele Casari, Caroline Hain, Thomas Nelis

This work addresses the need for precise control of thin film sputtering processes to enable thin film material tailoring on the example of zinc tin nitride (ZTN) thin films deposited via microwave plasma-assisted high power reactive magnetron sputtering ( ...

Amer Chemical Soc2024

MEMS-based Tunable Metasurface for Reflective Display Applications

Dorian Giraud Herle

In an era where portable electronic devices are indispensable for a wide range of activities, the need for displays that provide both long-lasting battery life and excellent visibility in different lighting conditions is increasingly important. Emissive di ...

EPFL2024

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

Wei-Hsu Hu

Sensing and imaging of light in the shortwave infrared (SWIR) range is increasingly used in various fields, including bio-imaging, remote sensing, and semiconductor process control. SWIR-sensitive organic photodetectors (OPDs) are promising because organic ...

EPFL2024

Amorphous Silicon Based Microchannel Plates for Time-of-Flight Positron Emission Tomography

Samira Alexandra Frey

Microchannel plates fabricated from hydrogenated amorphous silicon (AMCPs) are a promising alternative to conventional lead glass microchannel plates. Their main advantages lie in their cheaper and more flexible fabrication processes, allowing for adaptabl ...

EPFL2023

Plasma-Assisted Hybrid Vapour Deposition Technology for Thin Film Fabrication

Caroline Hain

Continuous development of thin film deposition technologies is essential for the fabrication of films that meet the specific requirements of their target applications and working conditions. Therefore, it is necessary to increase the number of accessible a ...

EPFL2023

Characterisation of electron cyclotron wall conditioning plasma in ASDEX Upgrade

Richard Pitts

Electron cyclotron wall condition (ECWC) discharges are characterised in ASDEX Upgrade with full tungsten plasma facing components and X2 polarised waves launched from the equatorial ports, relevant to ECWC conditions in ITER Pre-Fusion Power Operation pha ...

IOP Publishing Ltd2023

III-V Nitride Semiconductors Deposited At Low Temperature For Photovoltaic Applications

Jonathan Emanuel Thomet

This thesis reports on the study and use of low temperature processes for the deposition of indium gallium nitride (InGaN) thin films in order to alleviate some of the present drawbacks of its monolitic deposition on silicon for photovoltaic applications. ...

EPFL2023

Effect of Native Oxide on Stress in Silicon Nanowires: Implications for Nanoelectromechanical Systems

Yusuf Leblebici, Zuhal Tasdemir, Mohammad Nasr Esfahani

Understanding the origins of intrinsic stress in Si nanowires (NWs) is crucial for their successful utilization as transducer building blocks in next-generation, miniaturized sensors based on nanoelectromechanical systems (NEMS). With their small size lead ...

AMER CHEMICAL SOC2022

Strained crystalline nanomechanical resonators with quality factors above 10 billion

Tobias Kippenberg, Sergey Fedorov, Nils Johan Engelsen, Alberto Beccari

In strained mechanical resonators, the concurrence of tensile stress and geometric nonlinearity dramatically reduces dissipation. This phenomenon, called dissipation dilution, is employed in mirror suspensions of gravitational-wave interferometers and at t ...

NATURE PORTFOLIO2022

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Luca Nela

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

EPFL2022

Impact of rapid thermal processing on bulk and surface recombination mechanisms in FZ silicon with fired passivating contacts

Christophe Ballif, Franz-Josef Haug, Mario Joe Lehmann, Andrea Ingenito, Sofia Libraro, Audrey Marie Isabelle Morisset

We investigate bulk and interface recombination in crystalline silicon with p-type fired passivating contacts. These consist of a chemical oxide and an in-situ doped layer of SiCx with low carbon content. Following a rapid thermal annealing to activate the ...

ELSEVIER2022

Estimation of Charge Transfer During Long Continuing Currents in Natural Downward Flashes Using Single‐Station E‐Field Measurements

Farhad Rachidi-Haeri, Hannes Kohlmann, Wolfgang Schulz

The amount of charge transferred to ground during long continuing currents in natural downward flashes can be obtained either through direct current measurements or using remote electromagnetic fields, if direct measurements are not feasible. In this study ...

2022

Microwave plasma-assisted reactive HiPIMS of InN films: Plasma environment and material characterisation

Aïcha Hessler-Wyser, Johann Michler, Jonathan Emanuel Thomet, Caroline Hain, Thomas Nelis

This work focuses on the low temperature fabrication process of InN thin films via microwave plasma-assisted reactive high power impulse magnetron sputtering (MAR-HiPIMS). The influence of microwave plasma on the HiPIMS discharge process at various nitroge ...

ELSEVIER SCIENCE SA2022

High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices

Sylvain Dunand, Nicolas Würsch, Giulia Rossi, Matthew James Large

In this paper, by means of high-resolution photoemission, soft X-ray absorption and atomic force microscopy, we investigate, for the first time, the mechanisms of damaging, induced by neutron source, and recovering (after annealing) of p-i-n detector devic ...

MDPI2022

Characterization and Development of Fired Passivating Contacts for Silicon Solar Cells

Mario Joe Lehmann

One of the key elements to improve mainstream crystalline silicon (c-Si) solar cell performance is surface passivation, which is at the center of the ongoing transition from cells with direct silicon-metal contacts to full area passivating contacts. In the ...

EPFL2022

Fabrication and Characterization of High Aspect Ratio Amorphous Silicon Based Microchannel Plates

Christophe Ballif, Nicolas Würsch, Janina Christine Isabelle Löffler, Mohammad Beygi, Samira Alexandra Frey

This contribution focuses on the fabrication and characterization of microchannel plates made of hydrogenated amorphous silicon (AMCPs). Flexible fabrication processes and the semi-conducting nature of amorphous silicon could give these detectors the advan ...

2021

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

Photoisomerization of Linear and Stacked Isomers of a Charged Styryl Dye: A Tandem Ion Mobility Study

Eduardo Carrascosa Casado

The photoisomerization behavior of styryl 9M, a common dye used in material sciences, is investigated using tandem ion mobility spectrometry (IMS) coupled with laser spectroscopy. Styryl 9M has two alkene linkages, potentially allowing for four geometric i ...

AMER CHEMICAL SOC2021

Passivating Polysilicon Recombination Junctions for Crystalline Silicon Solar Cells

Christophe Ballif, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Philippe Wyss, Franz-Josef Haug, Mario Joe Lehmann, Andrea Ingenito, Audrey Marie Isabelle Morisset

Polysilicon recombination junctions whose n-type bottom layers double as a passivating contact to the silicon surface are investigated. Such recombination junctions are a key element in the interconnection of tandem devices with a silicon bottom cell, and ...

2021

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

Mihai Adrian Ionescu, Luca Selmi, Junrui Zhang, Francesco Bellando, Pierpaolo Palestri

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power i ...

2021