Publications related to Linear no-threshold model

Hydrogenated amorphous silicon high flux x-ray detectors for synchrotron microbeam radiation therapy

Sylvain Dunand, Nicolas Würsch, Matthew James Large, Giulia Rossi

Objective. Microbeam radiation therapy (MRT) is an alternative emerging radiotherapy treatment modality which has demonstrated effective radioresistant tumour control while sparing surrounding healthy tissue in preclinical trials. This apparent selectivity ...

IOP Publishing Ltd2023

Evaluation of neutron dose rates at the TCV tokamak facility

Patrick Blanchard, Henri Weisen, Matteo Vallar

A detailed MCNP neutronics model of the building housing the TCV tokamak has been developed. Predicted dose rates have been compared to neutron dose measurements at 12 locations in the building obtained during neutral beam injection into TCV plasmas. This ...

2023

Radiation Hardness of MALTA2, a Monolithic Active Pixel Sensor for Tracking Applications

Edoardo Charbon, Francesco Piro, Ashish Sharma

MALTA is a depleted monolithic active pixel sensor (DMAPS) developed in the Tower Semiconductor 180-nm CMOS imaging process. Monolithic CMOS sensors offer advantages over current hybrid imaging sensors in terms of both increased tracking performance due to ...

Ieee-Inst Electrical Electronics Engineers Inc2023

Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

Christian Enz

This article investigates the device variability induced by the total ionizing dose (TID) effects in a commercial 16-nm bulk nFinFETs, using specially designed test structures and measurement procedures aimed at maximizing the matching between devices. DC ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Christian Enz

This article investigates the fin- and finger-number dependence of the total ionizing dose (TID) degradation in 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs designed with different numbers of fins and fingers are irradiated up to 500 Mrad(SiO ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Development of a Data Concentrator ASIC for the High Luminosity upgrade of the CMS Outer Tracker detector with tracking trigger

Simone Scarfì

With the increasing capabilities of the microelectronics technology, future particle detectors in high energy physics will be able to yield high-level features that are not only simple geometrical positions or energy measurement in the silicon sensors used ...

EPFL2021

Characterization and Modeling of Total Ionizing Dose Effects on Nanoscale MOSFETs for Particle Physics Experiments

Chunmin Zhang

Total ionizing radiation compromises electrical characteristics of microelectronic devices and even causes functional failures of integrated circuits. It has been identified as a potential threat to electronic components, especially those in high-energy ph ...

EPFL2021

TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Christian Enz

This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs with several channel lengths are irradiated up to 1 Grad(SiO2) and then annealed for 24 h at 100 degrees C. Irradia ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Satellite-Based Personal UV Dose Estimation

Athanasios Nenes, David Vernez

Epidemiology and public health research relating to solar ultraviolet (UV) exposure usually relies on dosimetry to measure UV doses received by individuals. However, measurement errors affect each dosimetry measurement by unknown amounts, complicating the ...

2021

Impact of the skull contour definition on Leksell Gamma Knife(R)Icon (TM) radiosurgery treatment planning

Constantin Tuleasca

Introduction The Gamma Knife(R)planning software (TMR 10, Elekta Instruments, AB, Sweden) affords two ways of defining the skull volume, the "historical" one using manual measurements (still perform in some centers) and the new one using image-based skull ...

2020

Locating Transient Directional Sources in Free Space Based on the Electromagnetic Time Reversal Technique

Farhad Rachidi-Haeri, Marcos Rubinstein, Qi Li

Traditional location methods such as time of arrival and direction of arrival have been widely used to locate transient radiation sources. However, these approaches neglect the directional radiation pattern of the sources. Locating directional sources is a ...

2020

Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses

Christian Enz

Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad(SiO2) and annealed at high temperatures. TID sensitivity depends on the channel len ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses

Christian Enz

In this paper, the total ionizing dose (TID) response of a commercial 28-nm high-k CMOS technology at ultrahigh doses is measured and discussed. The degradation of pMOSFETs depends not only on the channel width but also on the channel length. Short-channel ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Photoabsorption and Photoionization Cross Sections of Pyridine in the Vacuum-Ultraviolet Energy Range

Bruno Credidio

We have performed an experimental investigation into the interaction of vacuum-ultraviolet synchrotron radiation with pyridine molecules in the gas phase. Specifically, a double-ion chamber spectrometer was used to measure the absolute photoabsorption cros ...

2019

Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3

Nergiz Sahin Solmaz, Mustafa Berke Yelten, Sadik Ilik

This paper presents a modeling approach to simulate the impact of total ionizing dose (TID) degradation on low-power analog and mixed-signal circuits. The modeling approach has been performed on 180-nm n-type metal-oxide-semiconductor field-effect transist ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

No time for drifting: Comparing performance and applicability of signal detrending algorithms for real-time fMRI

Dimitri Nestor Alice Van De Ville, Frank Scharnowski, Yury Koush, Rotem Roza Kopel

As a consequence of recent technological advances in the field of functional magnetic resonance imaging (fMRI), results can now be made available in real-time. This allows for novel applications such as online quality assurance of the acquisition, intra-op ...

2019

PET-based prognostic survival model after radiotherapy for head and neck cancer

Adrien Raphaël Depeursinge, Xiaolu Sun, Xin Sun

PurposeThe aims of this multicentre retrospective study of locally advanced head and neck cancer (LAHNC) treated with definitive radiotherapy were to (1) identify positron emission tomography (PET)-F-18-fluorodeoxyglucose (F-18-FDG) parameters correlated w ...

SPRINGER2019

Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs

Christian Enz, Farzan Jazaeri, Chunmin Zhang

This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity L ...

2018

Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses

Christian Enz, Farzan Jazaeri, Chunmin Zhang

Using the Y-function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process. ...

IEEE2018

Shutdown dose rate measurements after the 2016 Deuterium-Deuterium campaign at JET

Olivier Sauter, Ambrogio Fasoli, Basil Duval, Stefano Coda, Martinus Gijs, Jonathan Graves, Yves Martin, Duccio Testa, Patrick Blanchard, Bruno Emanuel Ferreira De Sousa Correia, Alessandro Pau, Pierre-Thomas Paul Brun, Cristian Sommariva, Henri Weisen, Richard Pitts, Sun Hee Kim, Yann Camenen, Jan Horacek, Javier García Hernández, Marco Wischmeier, Mikhail Maslov, Nicola Vianello, Miguel Fernández Ruiz, Federico Nespoli, Antonio José Pereira de Figueiredo, Liang Yao, Yao Zhou, David Pfefferlé, Dalziel Joseph Wilson, Robin Humphry-Baker, Davide Galassi, José Pedro Rebelo Ferreira Marques, Ana Francisca Leal Silva Soares, Jonathan Marc Philippe Faustin, Daniel Scott Alessi, Arnout Lodewijk M Beckers, Julio Rodriguez, Hamish William Patten, Jonnathan Cesar Hidalgo Acosta, , , , , , , , ,