Memristor

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Related publications (31)

Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Carlo Ricciardi, Cecilia Giovinazzo, Oguz Tolga Celik

Resistive-switching random access memory (ReRAM) technologies are nowadays a good candidate to overcome the bottleneck of Von Neumann architectures, taking advantage of their logic-in-memory capability and the ability to mimic biological synapse behavior. ...

AMER CHEMICAL SOC2019

Training fully connected networks with resistive memories: impact of device failures

Giorgio Cristiano, Massimo Giordano, Martina Bodini

Hardware accelerators based on two-terminal non-volatile memories (NVMs) can potentially provide competitive speed and accuracy for the training of fully connected deep neural networks (FC-DNNs), with respect to GPUs and other digital accelerators. We rece ...

2019

A programmable low-power ADC interface for an ISFET sweat sensor used in a wearable multi-sensing system

Maher Kayal, Evgenia Voulgari, François Krummenacher

An application specific integrated circuit (ASIC) named ANTIGONE (ANalog To dIGital cONvErter) was designed in AMS 0.35 mu m technology to interface with four Ion-sensitive field-effect transistor (ISFET) sensors and perform real-time monitoring of some bi ...

IEEE2019

Multi-panel, on-single-chip Memristive Biosensing

Giovanni De Micheli, Sandro Carrara, Danilo Demarchi, Ioulia Tzouvadaki, Abuduwaili Tuoheti

Memristive biosensors have demonstrated excellent capabilities for ultrasensitive bio-detection. In the present work, memristive biosensing chips are designed, fabricated and implemented in a for the first time presented multi-panel on-chip detection for d ...

2019

Multi-ReRAM synapses for artificial neural network training

Elmira Shahrabi, Igor Krawczuk, Yusuf Leblebici, Irem Boybat Kara, Carlo Ricciardi, Cecilia Giovinazzo, Evangelos Eleftheriou, Abu Sebastian

Metal-oxide-based resistive memory devices (ReRAM) are being actively researched as synaptic elements of neuromorphic co-processors for training deep neural networks (DNNs). However, device-level non-idealities are posing significant challenges. In this wo ...

IEEE2019

Observation of charge-transfer-driven antiferroelectricity in 3d-pyrochlore multiferroic Cu2OCl2

Helmuth Berger, Wei Li

Very recently, multiferroic behavior close to the boiling temperature of liquid nitrogen was reported in oxohalide-based Cu2OCl2. In this study, we have established yet another novel mechanism for the origin of charge ordering in multiferroic Cu2OCl2. The ...

ELSEVIER SCIENCE BV2019

Material and Electrical study of HfO2-Based Resistive Random Access Memories (ReRAMs)

Behnoush Attarimashalkoubeh

Resistive Random Access Memories (ReRAMs) have been researched intensively in the last past decades as a promising alternatives technology for the next-generation non-volatile memory (NVM) devices. ReRAMâ s excellent performance properties such as high sw ...

EPFL2019

Performance improvement of chip-level CMOS-integrated ReRAM cells through material optimization

Elmira Shahrabi, Thomas La Grange, Yusuf Leblebici, Tugba Demirci

The integration of the resistive random access memory (ReRAM) with CMOS logic circuitry provides a solution to scaling limitations, and offers promising candidates for use in next generation computing applications. It is challenging to realize a reliable, ...

ELSEVIER SCIENCE BV2019

Ionic dipolar switching hinders charge collection in perovskite solar cells with normal and inverted hysteresis

Mohammad Khaja Nazeeruddin, Iwan Zimmermann, Kyung Taek Cho, Sadig Aghazada, Tom Theodorus Antonius Lummen

Drift-diffusion modeling of the ionic dipole switching from the measurement of fast scanned and long pre-biased electrical response is proposed as a novel protocol for evaluation of limit hysteretic effects in perovskite solar cells. Up to eight systems we ...

2019

Switching event detection and self-termination programming circuit for energy efficient ReRAM memory arrays

Alexandre Sébastien Julien Levisse, Etienne Nowak

Energy efficiency remains a challenge for the design of non-volatile resistive memories (ReRAMs) arrays. This memory technology suffers from intrinsic variability in switching speed, programming voltages and resistance levels. The programming conditions of ...

2019

The key impact of incorporated Al2O3 barrier layer on W-based ReRAM switching performance

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Cecilia Giovinazzo

In this article, we inspected the bipolar resistive switching behavior of W-based ReRAMs, using HfO2 as switching layer. We have shown that the switching properties can be significantly enhanced by incorporating an Al2O3 layer as a barrier layer. It stabil ...

IEEE2018

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