Publications related to Deep-level transient spectroscopy

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Andras Kis, Oleg Yazyev, Mukesh Kumar Tripathi, Yanfei Zhao, Ahmet Avsar, Kristians Cernevics, Zhenyu Wang, Juan Francisco Gonzalez Marin, Cheol Yeon Cheon, Hyungoo Ji

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

Nature Research2023

Tailoring Organic/Inorganic Interface Trap States of Metal Oxide/Polyimide toward Improved Vacuum Surface Insulation

Chao Wang, Guang-Yu Sun, Haoxiang Zhao

High-voltage and high-power devices are indispensablein spacecraftfor outer space explorations, whose operations require aerospace materialswith adequate vacuum surface insulation performance. Despite persistentattempts to fabricate such materials, current ...

AMER CHEMICAL SOC2023

Correlating light-induced deep defects and phase segregation in mixed-halide perovskites

Quentin Thomas Jeangros, Jakub Holovsky, Christian Michael Wolff, Peter Joseph Fiala, Xin Yu Chin

Mixed-halide perovskites are highly promising materials for tandem solar cells. The phenomenon of phase segregation, however hinders their application. Here, we combine Fourier-Transform photocurrent spectroscopy with photoluminescence and current density- ...

Royal Society of Chemistry2022

Electrical Spectroscopy of Defect States in Synthetic 2D Materials

Yanfei Zhao

Two-dimensional (2D) materials such as graphene and transition metal dichalcogenide (TMDC) are considered as one of the most promising material platforms for future electronic devices, due to their ultra-thin thickness and fascinating electrical and optica ...

EPFL2022

Impact of Interface Traps in Floating-Gate Memory Based on Monolayer MoS2

Andras Kis, Guilherme Migliato Marega

Two-dimensional materials (2DMs) have found potential applications in many areas of electronics, such as sensing, memory systems, optoelectronics, and power. Despite an intense experimental work, the literature is lacking of accurate modeling of nonvolatil ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

New metric for carrier selective contacts for silicon heterojunction solar cells

Mathieu Gérard Boccard, Jakub Holovsky

Heterojunction carrier selective contacts for solar cells have gained great attention because of the ability of these contacts to efficiently collect majority carriers while hindering the recombination of minority carriers, thus resulting in the highest re ...

PERGAMON-ELSEVIER SCIENCE LTD2022

Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer

Nicolas Grandjean, Jean-François Carlin, Camille Haller

We investigate the density of defects and the degradation rate in InGaN light-emitting diodes having identical dislocation density and epitaxial structure, but different indium content in the quantum well (QW; 12%, 16%, 20%). Our results, based on combined ...

IOP PUBLISHING LTD2021

Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors

Jens Christian Johannsen

The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- ...

ELSEVIER2021

Assessing mobile ions contributions to admittance spectra and current-voltage characteristics of 3D and 2D/3D perovskite solar cells

Mohammad Khaja Nazeeruddin, Sanghyun Paek, Zubair Ahmad

Recently, the 2D perovskite layer is employed as a capping/passivating layer in the perovskite solar cells (PSCs). The 2D perovskite layer is prepared by inserting a large-sized hydrophobic cation spacer into the perovskite crystal lattice. The large-sized ...

2020

Deep-UV-Enhanced Approach for Low-Temperature Solution Processing of IZO Transistors with High-k AlOx/YAlOx Dielectric

Danick Briand, Jaemin Kim, Alessio Mancinelli

Solution processing is an attractive alternative to standard vacuum fabrication techniques for the large-area manufacturing of metal oxide (MOx)-based electron devices. Here, we report on thin-film transistors (TFTs) based on a solution-processed indium zi ...

AMER CHEMICAL SOC2020

Theory and Computation of Hall Scattering Factor in Graphene

Samuel Poncé, Feliciano Giustino

The Hall scattering factor, r, is a key quantity for establishing carrier concentration and drift mobility from Hall measurements; in experiments, it is usually assumed to be 1. In this paper, we use a combination of analytical and ab initio modeling to de ...

AMER CHEMICAL SOC2020

Theoretical maximum photogeneration efficiency and performance characterization of InxGa1-xN/Si tandem water-splitting photoelectrodes

Sophia Haussener, Yannick Kenneth Gaudy

InxGa1-xN is a promising material for flexible and efficient water-splitting photoelectrodes since the bandgap is tunable by modifying the indium content. We investigate the potential of an InxGa1-xN/Si tandem used as a water-splitting photoelectrode. We p ...

2020

GaAs nanoscale membranes: prospects for seamless integration of III-Vs on silicon

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Luca Francaviglia, Nicholas Paul Morgan, Vladimir Dubrovskii, Sara Marti Sanchez, Andres Maria Raya Bejarano

The growth of compound semiconductors on silicon has been widely sought after for decades, but reliable methods for defect-free combination of these materials have remained elusive. Recently, interconnected GaAs nanoscale membranes have been used as templa ...

2020

Correlated states in twisted double bilayer graphene

Oleg Yazyev, Quansheng Wu, Cheng Shen, Na Li, Jian Tang, Rong Yang

Electron-electron interactions play an important role in graphene and related systems and can induce exotic quantum states, especially in a stacked bilayer with a small twist angle(1-7). For bilayer graphene where the two layers are twisted by the 'magic a ...

NATURE PUBLISHING GROUP2020

Transient Photovoltage Measurements on Perovskite Solar Cells with Varied Defect Concentrations and Inhomogeneous Recombination Rates

Wolfgang Richard Tress, Brian Irving Carlsen, Zaiwei Wang, Firouzeh Ebadi Garjan

In all kinds of solar cells, transient photovoltage (TPV) decay measurements have been used to determine charge carrier lifetimes and to quantify recombination processes and orders. However, in particular, for thin-film devices with a high capacitance, the ...

2020

Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

In this article, an analytical predictive model of interface charge traps in symmetric, long-channel double-gate, junctionless transistors (JLTs) is proposed based on a charge-based model. Interface charge traps arising from exposure to chemicals, high-ene ...

2019

Cryogenic MOS Transistor Model

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to strong inversion and in the linear and saturation regimes. The model is dev ...

2018

SPICE Modeling of Photoelectric Effects in Silicon With Generalized Devices

Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella, Chiara Rossi

Modeling photoelectric effects in semiconductors with electrical simulators is demonstrated in typical 1-D and 2-D architectures. The concept is based on a coarse meshing of the semiconductor with the so-called generalized lumped devices, where equivalent ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

Characterization and Modeling of 28 nm Bulk CMOS Technology down to Cryogenic Temperatures (4.2 K)

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This paper presents an experimental investigation, compact modeling, and low-temperature physics-based modeling of a commercial 28-nm bulk CMOS technology operating at cryogenic temperatures. The physical and technological parameters are extracted at 300, ...

2018

Deep level trapped defect analysis in CH3NH3PbI3 perovskite solar cells by deep level transient spectroscopy

Mohammad Khaja Nazeeruddin, Yonghui Lee

We report the presence of defects in CH3NH3PbI3, which is one of the main factors that deteriorates the performance of perovskite solar cells. Although the efficiency of the perovskite solar cells has been improved by curing defects using various methods, ...

Royal Soc Chemistry2017