Publications related to Small-signal model

Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement

In this work, we propose an analytical model for the intrinsic transcapacitances in ultra-thin gate-all-around junctionless nanowire field effect transistors in the presence of confined energy states of electrons. The validity of the developed model is con ...

PERGAMON-ELSEVIER SCIENCE LTD2023

Nonlinear Photoluminescence in Gold Thin Films

Sergejs Boroviks

Promisingapplications in photonics are driven by the ability tofabricate crystal-quality metal thin films of controlled thicknessdown to a few nanometers. In particular, these materials exhibit ahighly nonlinear response to optical fields owing to the indu ...

AMER CHEMICAL SOC2023

Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology

Edoardo Charbon, Christian Enz, Farzan Jazaeri, Hung-Chi Han, Antonio D'Amico

This paper presents the RF characterization and modeling of a 22nm FDSOI technology down to 3.3K for quantum computing applications. The equivalent small-signal components are extracted analytically and automatically from the de-embedded two-port Y -parame ...

IEEE2022

Hard-Switching Losses in Power FETs: The Role of Output Capacitance

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Reza Soleiman Zadeh Ardebili

For certain field-effect transistors (FETs) in soft-switching operation, the large-signal behavior of their output capacitance ( Co ) has shown to deviate considerably from the datasheet values. This can have a significant effect on hard-switching losses i ...

2021

Investigation on Output Capacitance Losses in Superjunction and GaN-on-Si Power Transistors

Elison de Nazareth Matioli, Halil Kerim Yildirim, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani

Low ON-resistance of advanced superjunction (SJ) and GaN-on-Si transistors is of great importance in power converters, however, the anomalous loss in their output capacitance (C OSS ) severely limits their performance. In this work, we use an energy-orient ...

IEEE2021

Benchmarking of single imaging datasets

Aleksandra Radenovic, Adrien Charles-François Raymond Descloux

A method of estimating a value (311-313) indicative of a signal component of an input imaging dataset (190) includes determining a normalized Fourier-domain representation of the input imaging dataset (190); and for each one of multiple low-pass filters (3 ...

2020

Coss Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses

Elison de Nazareth Matioli, Armin Jafari, Luca Nela, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani

The dissipated energy (Ediss) related to the resonant charging/discharging of a transistor output capacitance, becomes a dominant loss factor for power converters operating in the MHz range. A recent work has introduced a small-signal measurement method to ...

2020

Analysis of Large-Signal Output Capacitance of Transistors using Sawyer–Tower Circuit

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Palliyage Srilak Nirmana Perera, Georgios Kampitsis, Jessy Anthony Ançay

A detailed analysis on the Sawyer–Tower method used in the measurement of large-signal output capacitance (Co) of power transistors is presented, followed by important design recommendations to obtain accurate results. Key factors affecting the proper impl ...

2020

Modeling Compact Intracloud Discharge (CID) as a Streamer Burst

Farhad Rachidi-Haeri, Marcos Rubinstein

Narrow Bipolar Pulses are generated by bursts of electrical activity in the cloud and these are referred to as Compact Intracloud Discharges (CID) or Narrow Bipolar Events in the current literature. These discharges usually occur in isolation without much ...

2020

Hardware-in-the-Loop Characterization of Source-Affected Output Characteristics of Cascaded H-Bridge Converter

Drazen Dujic, Marko Petkovic

Recent trends in power system design such as an increasing share of renewable energy sources and integration of power electronics equipment for medium voltage applications are creating different subsystem interactions that require proper investigation, und ...

2021

Comparison of Different Precision Pseudo Resistor Realizations in the DC-Feedback of Capacitive Transimpedance Amplifiers

Georg Fantner, Jens Anders

In this paper, three different pseudo resistor (PR) realizations are compared regarding their noise and linearity performance within the DC feedback loop of an integrator-differentiator transimpedance amplifier (I-D-TIA). Thanks to its intrinsic shot noise ...

IEEE2019

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Catherine Erine, Kai Cheng, Minghua Zhu

Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V BR ) and low ON-resistance (R ON ). The multi-channel structure was judiciously designed to yield a small sheet resistance (R s ) of 80 Ω/sq using only four 2DEG channels, ...

IEEE2019

New Insights on Output Capacitance Losses in Wide-Band-Gap Transistors

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani

The low ON-resistance of wide-band-gap (WBG) transistors is a key feature for efficient power converters, however, the anomalous loss in their output capacitance (COSS) severely limits their performance at high switching frequencies. Characterizing COSS-lo ...

2019

Measurement of Large-Signal Coss and Coss Losses of Transistors Based on Nonlinear Resonance

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera

In this letter, we present a new measurement technique to evaluate the large-signal output capacitance ( COSS ) of transistors as well as the COSS energy dissipation ( EDISS ), based on the nonlinear resonance between a known inductor and the output capaci ...

2019

Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-Off Voltage

Elison de Nazareth Matioli, Jun Ma, Dante Colao Zanuz

In this letter, we demonstrate a general model to reduce the reverse leakage current (I-R) in high-voltage AlGaN/GaN Schottky diodes (SBDs) by engineering the pinchoff voltage (V-p) of their field plates (FPs). The maximum voltage drop at the Schottky junc ...

Institute of Electrical and Electronics Engineers2017

Conformal Mapping of Impedance Stability Models for System-Level Dynamics Assessments

Drazen Dujic, Francisco Daniel Freijedo Fernández, Uzair Javaid

Impedance stability methods are suitable for assessing the dynamics of power converters controllers, but also for ac/dc microgrids system level studies. This work proposes the combination of impedance modeling and conformal mapping for the identification o ...

2017

Disruption mitigation by injection of small quantities of noble gas in ASDEX Upgrade

Basil Duval, Emiliano Fable, Bernhard Sieglin, Gergely Papp

The most recent experiments of disruption mitigation by massive gas injection in ASDEX Upgrade have concentrated on small-relatively to the past-quantities of noble gas injected, and on the search for the minimum amount of gas necessary for the mitigation ...

Iop Publishing Ltd2017

Analysis of Dielectric Microbead Detection by Impedance Spectroscopy with Nanoribbons

Carlotta Guiducci, Enrico Accastelli, Paolo Scarbolo, Luca Selmi, Thomas Ernst

We present a quantitative numerical analysis of dielectric microbead detection experiments with nanoribbons operated in the AC small signal regime. To this purpose, a comprehensive model of nanoribbon operation in electrolyte environment and with DC/AC sig ...

Ieee2016

Kerr coefficients of plasma resonances in Josephson junction chains

We present an experimental and theoretical analysis of the self-and cross-Kerr effect of extended plasma resonances in Josephson junction chains. We calculate the Kerr coefficients by deriving and diagonalizing the Hamiltonian of a linear circuit model for ...

Amer Physical Soc2015

Graphene Field Effect Devices Operating in Differential Circuit Configuration

Davide Sacchetto, Yusuf Leblebici, Clemens Benedict Nyffeler

We study the concept of a basic building block for circuits using differential signaling and being based on graphene field effect devices. We fabricated a number of top-gated graphene FETs using commercially available graphene and employing electron beam l ...

Elsevier2015