Publications related to Czochralski method

Crystallization of FAPbI3: Polytypes and stacking faults

Molecular dynamics simulations are performed to study the crystallization of formamidinium lead iodide. From all-atom simulations of the crystal growth process and the delta-alpha-phase transitions, we try to reveal the formation of various stack-faulted i ...

Aip Publishing2023

Structure, Oxygen Content and Electric Properties of Titanium Nitride Electrodes in TiNx/La:HfO2/TiNx Stacks Grown by PEALD on SiO2/Si

Philippe Buffat, Elena Suvorova Buffat

This work reports experimental results of the quantitative determination of oxygen and band gap measurement in the TiNx electrodes in planar TiNx top/La:HfO2/TiNx bottom MIM stacks obtained by plasma enhanced atomic layer deposition on SiO2. Methodological ...

2022

Dielectrophoretic Traps for Efficient Bead and Cell Trapping and Formation of Aggregates of Controlled Size and Composition

Philippe Renaud, Arnaud Bertsch, Clémentine Sophie Sarah Lipp

We present a microfluidic dielectrophoretic-actuated system designed to trap chosen single-cell and form controlled cell aggregates. A novel method is proposed to characterize the efficiency of the dielectrophoretic trapping, considering the flow speed but ...

2022

Bulk Defects and Hydrogenation Kinetics in Crystalline Silicon Solar Cells With Fired Passivating Contacts

Christophe Ballif, Franz-Josef Haug, Andrea Ingenito, Audrey Marie Isabelle Morisset, Philippe Wyss, Mario Joe Lehmann, Père Roca i Cabarrocas

In this article, the effect of the various processing steps during the fabrication of c-Si/SiOx/SiCx fired passivating contacts on the silicon bulk lifetime is studied, and the kinetics of defect deactivation by hydrogenation is investigated. It is found t ...

2022

Nonlinear plasmonics with monocrystalline gold

Sergejs Boroviks

Plasmonic nanostructures allow to controllably enhance linear and nonlinear light-matter interactions by concentrating the electromagnetic fields at the scales below the diffraction limit. This feature is highly desired for many applications, e.g. bio- and ...

2021

Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process

Mihai Adrian Ionescu, Igor Stolichnov, Eamon Patrick O'Connor, Matteo Cavalieri, Carlotta Gastaldi

In this work, we report an experimental investigation of pulsed laser deposition (PLD) of thin Gd:HfO2 layers at 330 degrees C, which show ferroelectric behavior after annealing at 450 degrees C, compatible with complementary metal-oxide-semiconductor back ...

AMER CHEMICAL SOC2020

Silicon Nanowire Arrays Coated with Ag and Au Dendrites for Surface-Enhanced Raman Scattering

Siarhei Zavatski

Silicon nanowires (SiNWs) were comprehensively characterized in dependence on conditions of their formation via metal (Ag) -assisted chemical etching (MACE) of monocrystalline Si. The Ag structures remained on/between SiNWs based on both n- and p-Si were f ...

2020

High-temperature annealing effects on molybdenum-silicon contact substrate for vertically structured silicon quantum-dot solar cells

Chien-Jen Yang

This paper studies the applicability of sputtered Molybdenum (Mo) thin films on silicon wafers (Mo-Si) to act as contact substrates for vertically structured Si quantum-dot (QD) solar cells. The compatibility of Mo-Si contact substrate with Si QD material ...

2019

Additive Fabrication of Silicon Pillars on Monocrystalline Silicon by Direct Laser Melting

Marie Camille Laëtitia Le Dantec

Additive Manufacturing (AM) is an emerging part production technology that offers many ad-vantages such as high degree of customization, material savings and design of 3D highly complex structures. However, AM is a complex multiphysics process. Therefore, ...

EPFL2018

Conformal Deposition of Conductive Single-Crystalline Cobalt Silicide Layer on Si Wafer via a Molecular Approach

Giovanni De Micheli, Olha Sereda, Pierre-Emmanuel Julien Marc Gaillardon, Tsung-Han Lin, David Baudouin

The realization of metal-semiconductor contacts plays a significant role in ultrascaled integrated circuits. Here, we establish a low-temperature molecular approach for the conformal deposition of a 20-nm Co-rich layer on Si (100) wafers by reaction in sol ...

2018

Mechanical properties of MC multimetallic carbides in steel

Lionel Michelet

Carbides constitute a class of materials used for many applications, where excellent mechanical properties, such as stiffness, hardness and fracture toughness, are required. The machining industry is a typical example where carbide are crucial materials. W ...

EPFL2018

Fully textured monolithic perovskite/silicon tandem solar cells with 25.2% power conversion efficiency

Christophe Ballif, Florent Sahli, Quentin Thomas Jeangros, Matthias Wolfgang Bräuninger, Davide Sacchetto, Bertrand Yves Paul Paviet-Salomon, Gianluca Cattaneo, Matthieu Despeisse, Mathieu Gérard Boccard, Sylvain Nicolay, Björn Niesen, Loris Barraud, Laura Ding, Jérémie Werner, Raphaël Monnard

Tandem devices combining perovskite and silicon solar cells are promising candidates to achieve power conversion efficiencies above 30% at reasonable costs. State-of-the-art monolithic two-terminal perovskite/silicon tandem devices have so far featured sil ...

2018

Piezoresistivity characterization of silicon nanowires through monolithic MEMS

Yusuf Leblebici, Mohammad Nasr Esfahani

This paper presents a monolithic approach for the integration of silicon nanowires (Si NWs) with microelectromechanical systems (MEMS). The process is demonstrated for the case of co-fabrication of Si NWs with a 10-μm-thick MEMS on the same silicon-on-insu ...

2017

Spin transport in topological insulator-based nanostructures

Kristina Vaklinova

With the advent of spintronics, significant research effort is made to realize efficient injection, transport, manipulation, and detection of spin. The material platforms and device architectures suitable for this purpose 3D topological insulators (TIs) ar ...

EPFL2017

A combinatorial chemical beam vapour deposition approach to tune the electrical conductivity of Nb:TiO2 films via Si co-doping

Paul Muralt, Silviu Cosmin Sandu, Estelle Wagner, Scott Harada, Giacomo Benvenuti, Marc Jobin

Chemical beam vapour deposition (CBVD) is a thin film deposition technique operated under high vacuum conditions in which film growth occurs through the thermally activated chemical decomposition of precursor molecules at the substrate surface. This techni ...

Elsevier Science Sa2016

Compliant membranes improve resolution in full-wafer micro/nanostencil lithography

Jürgen Brugger, Luis Guillermo Villanueva Torrijo, Andreea Veronica Savu, Oscar Vazquez Mena, Katrin Sidler Arnet

This work reports on a considerable resolution improvement of micro/nanostencil lithography when applied on full-wafer scale by using compliant membranes to reduce gap-induced pattern blurring. Silicon nitride (SiN) membranes are mechanically decoupled fro ...

2012

Na2/7Gd4/7MoO4: a Modulated Scheelite-Type Structure and Conductivity Properties

Alla Arakcheeva

Scheelite-type compounds with the general formula (A1,A2)(n)(B1,B2)O-4 (2/3

2012

Third-Order Susceptibility of Silicon Crystals Measured with Millimeter-Wave Gyrotron

Jean-Philippe Hogge, Markus Siegrist

We investigate experimental dependence of the third harmonic generation efficiency in the n-type Si crystals on the geometrical dimensions of the sample, polarization and power of the fundamental wave. The efficiency increases monotonically with the rise o ...

2011

Organic Pentacene Thin Film Transistors on Flexible Substrates Fabricated by Stencil Lithography

Katrin Sidler Arnet

This thesis presents the fabrication and characterization of organic thin film transistors (TFTs) on flexible polymer substrates and the development of compliant stencil lithography to significantly improve the patterning resolution on full-wafer scale. Po ...

EPFL2010

Electron spin resonance in alkali doped SWCNTs

László Forró, Bálint Náfrádi

Electron spin resonance (ESR) measurements on SWCNTs doped with alkali atoms (potassium) using a solid state reaction is reported. We find the emergence of the ESR signal of itinerant electrons upon doping with a signal intensity that is comparable to that ...

2008