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Related publications (26)

The Vibrating Body Transistor

Mihai Adrian Ionescu, Daniel Grogg

This paper presents a hybrid resonator architecture called the vibrating body field-effect transistor (VB-FET), which combines a silicon microelectromechanical (MEM) resonator and a FET in a single device. The active device provides improved motion sensing ...

2011

Electroacoustic absorbers II: implementation of a digital synthetic admittance for controlling the dynamics of electroacoustic absorbers

Hervé Lissek, Romain Boulandet, Etienne Thierry Jean-Luc Rivet

This paper discusses the implementation of a synthetic electrical admittance for controlling the dynamics of electroacoustic absorbers. Indeed, different basic control techniques are capable of varying the acoustic impedance of an electroacoustic transduce ...

2011

9 MHz vibrating body FET tuning fork oscillator

Mihai Adrian Ionescu, Maher Kayal, Daniel Grogg, Fabrizio Lo Conte

A 9.4MHz micro-electromechanical oscillator based on a Vibrating Body Field Effect Transistor (VB-FET) is presented in this work. The tuning fork VB-FET used in this work provides a high quality factor of 9400 in the open-loop configuration and a low equiv ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

High-quality factor MEMS based oscillator: Silicon 9 MHz oscillator with low phase noise and high quality factor

Mihai Adrian Ionescu, Maher Kayal, Daniel Grogg, Fabrizio Lo Conte

In this paper, an oscillator based on a Vibrating Body Field Effect Transistor (VB-FET) working at 9.4MHz is presented. The electrical characteristics of this active MEM resonator are detailed for static and dynamic operation. The benefit of the intrinsic ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Self-sustained Low Power Oscillator Based on Vibrating Body Field Effect Transistor

Mihai Adrian Ionescu, Daniel Grogg

The operation of a vibrating body field effect transistor (VB-FET) near pull-in is exploited to experimentally demonstrate a self-oscillating device. The positive feedback mechanism is triggered at the onset of inversion in a depleted VB-FET channel, near ...

IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

A fixed-volume microfluidic mixer realized using multilayer PDMS technology

Martinus Gijs, Hüseyin Cumhur Tekin

We present leakage-free valves and an efficient fixed-volume mixer fabricated using a four-layer soft lithography technique in polydimethylsiloxane (PDMS). Mixing is achieved with a 95% efficiency in a few seconds by creating circular flow patterns inside ...

Elsevier Science, Reg Sales Off, Customer Support Dept, 655 Ave Of The Americas, New York, Ny 10010 Usa2009

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